Inventor · disambiguated record
Mitsuaki Oya
Also filed as: OYA MITSUAKI
21 granted patents·5 pending applications·28 citations·filing 2009–2022
91Inventor score
Top patents by PatentIndex Score
26 records- 0190US8110851B2Nitride-based semiconductor device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2011·Granted Feb 7, 2012·9 cites·16 claims
- 0285US8299490B2Nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2011·Granted Oct 30, 2012·6 cites·14 claims
- 0382US8357607B2Method for fabricating nitride-based semiconductor device having electrode on m-planePANASONIC CORP·Filed 2010·Granted Jan 22, 2013·4 cites·8 claims
- 0478US11569424B2Semiconductor deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2020·Granted Jan 31, 2023·1 cites·11 claims
- 0578US8791473B2Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating deviceYOKOGAWA TOSHIYA·Filed 2009·Granted Jul 29, 2014·8 cites·17 claims
- 0669US12087897B2Semiconductor deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2022·Granted Sep 10, 2024·0 cites·19 claims
- 0757US12457825B2Semiconductor light-emitting elementNUVOTON TECHNOLOGY CORP JAPAN·Filed 2021·Granted Oct 28, 2025·0 cites·17 claims
- 0855US8686561B2Nitride-based semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2012·Granted Apr 1, 2014·0 cites·20 claims
- 0955US8648378B2Nitride-based semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2012·Granted Feb 11, 2014·0 cites·20 claims
- 1054US2011156048A1Nitride-based semiconductor device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2009·Application pending·0 cites
- 1153US2013009187A1Nitride-based semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2012·Application pending·0 cites
- 1252US8309984B2Nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2011·Granted Nov 13, 2012·0 cites·12 claims
- 1352US2013015427A1Nitride-based semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2012·Application pending·0 cites
- 1451US9209350B2Method for fabricating triangular prismatic m-plane nitride semiconductor light-emitting diodePANASONIC CORP·Filed 2014·Granted Dec 8, 2015·0 cites·14 claims
- 1549US8318594B2Method for fabricating nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2010·Granted Nov 27, 2012·0 cites·8 claims
- 1648US8729587B2Nitride semiconductor element and manufacturing method thereforYOKOGAWA TOSHIYA·Filed 2012·Granted May 20, 2014·0 cites·18 claims
- 1747US8164109B2Nitride semiconductor element and method for producing the sameOYA MITSUAKI·Filed 2011·Granted Apr 24, 2012·0 cites·21 claims
- 1846US8441108B2Nitride semiconductor element having electrode on m-plane and method for producing the sameOYA MITSUAKI·Filed 2010·Granted May 14, 2013·0 cites·27 claims
- 1946US8304802B2Nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2011·Granted Nov 6, 2012·0 cites·14 claims
- 2045US8933543B2Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and AgYOKOGAWA TOSHIYA·Filed 2011·Granted Jan 13, 2015·0 cites·42 claims
- 2144US8334199B2Method for fabricating nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2010·Granted Dec 18, 2012·0 cites·9 claims
- 2243US9287378B2Nitride semiconductor light-emitting element and method for fabricating the samePANASONIC CORP·Filed 2014·Granted Mar 15, 2016·0 cites·14 claims
- 2342US8748899B2Nitride-based semiconductor device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2012·Granted Jun 10, 2014·0 cites·27 claims
- 2440US8729579B2Nitride-based semiconductor light-emitting element, lighting device, liquid crystal display device, and method for producing lighting deviceYOKOGAWA TOSHIYA·Filed 2012·Granted May 20, 2014·0 cites·23 claims
- 2540US2013001513A1Nitride semiconductor element and manufacturing method thereforPANASONIC CORP·Filed 2012·Application pending·0 cites
- 2638US2012326161A1Nitride semiconductor element and manufacturing method thereforYOKOGAWA TOSHIYA·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →