Inventor · disambiguated record
Michiaki Sano
Also filed as: SANO MICHIAKI
43 granted patents·2 pending applications·783 citations·filing 1999–2022
98Inventor score
Files withSANDISK TECHNOLOGIES LLC28SANDISK TECHNOLOGIES INC6SANDISK 3D LLC5TOKYO ELECTRON LTD2SANO MICHIAKI1
Top patents by PatentIndex Score
45 records- 0198US9576967B1Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openingsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Feb 21, 2017·199 cites·25 claims
- 0297US11101289B1Three-dimensional memory device with composite charge storage structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 24, 2021·7 cites·17 claims
- 0397US10553599B1Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layerSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 4, 2020·40 cites·12 claims
- 0497US9620712B2Concave word line and convex interlayer dielectric for protecting a read/write layerSANDISK 3D LLC·Filed 2014·Granted Apr 11, 2017·32 cites·35 claims
- 0597US9601502B2Multiheight contact via structures for a multilevel interconnect structureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 21, 2017·30 cites·25 claims
- 0696US10217746B1Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 26, 2019·32 cites·12 claims
- 0796US10115735B2Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·24 cites·9 claims
- 0896US10083982B2Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 25, 2018·34 cites·24 claims
- 0996US9305937B1Bottom recess process for an outer blocking dielectric layer inside a memory openingSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·39 cites·45 claims
- 1095US10790296B1Distortion-compensated wafer bonding method and apparatus using a temperature-controlled backside thermal expansion layerSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 29, 2020·19 cites·20 claims
- 1195US10181442B1Three-dimensional memory device having L-shaped word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 15, 2019·23 cites·18 claims
- 1295US10083877B1Vertical field effect transistors including two-tier select gates and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 25, 2018·12 cites·22 claims
- 1395US9911790B1Resistive RAM including air gaps between word lines and between vertical bit linesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 6, 2018·30 cites·20 claims
- 1494US10797035B1Bonded assembly containing side bonding structures and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 6, 2020·16 cites·20 claims
- 1594US10211215B1Three-dimensional memory device containing word lines having vertical protrusion regions and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 19, 2019·25 cites·14 claims
- 1694US9437543B2Composite contact via structure containing an upper portion which fills a cavity within a lower portionSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 6, 2016·16 cites·15 claims
- 1794US9401309B2Multiheight contact via structures for a multilevel interconnect structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 26, 2016·24 cites·30 claims
- 1893US11778818B2Three-dimensional memory device with punch-through-resistant word lines and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 3, 2023·3 cites·7 claims
- 1993US10381322B1Three-dimensional memory device containing self-aligned interlocking bonded structure and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·56 cites·11 claims
- 2093US9673304B1Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·10 cites·20 claims
- 2192US10290803B2Three-dimensional devices with wedge-shaped contact region and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 14, 2019·13 cites·15 claims
- 2292US9412753B2Multiheight electrically conductive via contacts for a multilevel interconnect structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 9, 2016·15 cites·9 claims
- 2391US9728499B2Set of stepped surfaces formation for a multilevel interconnect structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 8, 2017·14 cites·12 claims
- 2490US10923496B2Three-dimensional memory device containing a replacement buried source line and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 16, 2021·6 cites·5 claims
- 2590US9524901B2Multiheight electrically conductive via contacts for a multilevel interconnect structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·13 cites·19 claims
- 2690US9230905B2Trench multilevel contact to a 3D memory array and method of making thereofSANDISK 3D LLC·Filed 2014·Granted Jan 5, 2016·13 cites·39 claims
- 2788US9666799B2Concave word line and convex interlayer dielectric for protecting a read/write layerSANDISK 3D LLC·Filed 2014·Granted May 30, 2017·7 cites·46 claims
- 2884US11569139B2Electrical overlay measurement methods and structures for wafer-to-wafer bondingWESTERN DIGITAL TECH INC·Filed 2021·Granted Jan 31, 2023·1 cites·3 claims
- 2981US10115770B2Methods and apparatus for three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·3 cites·16 claims
- 3078US10994239B2Spiral gas adsorption apparatus and method of using the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 4, 2021·1 cites·6 claims
- 3177US10209636B1Exposure focus leveling method using region-differentiated focus scan patternsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 19, 2019·3 cites·20 claims
- 3270US10756106B2Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 25, 2020·1 cites·8 claims
- 3359US11973026B2Three-dimensional memory device including stairless word line contact structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 3458US12394668B2Semiconductor device having edge seal and method of making thereof without metal hard mask arcingSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Aug 19, 2025·0 cites·12 claims
- 3556US12408335B2Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 2, 2025·0 cites·10 claims
- 3654US6743730B1Plasma processing methodTOKYO ELECTRON LTD·Filed 2000·Granted Jun 1, 2004·4 cites·25 claims
- 3753US12416589B2Systems and methods for non-destructive inspection of semiconductor devices using reflective X-ray microscope tomographic imagingSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 16, 2025·0 cites·2 claims
- 3853US12185540B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 31, 2024·0 cites·2 claims
- 3950US6483141B2Semiconductor memory device and manufacturing method thereofTEXAS INSTRUMENTS INC·Filed 1999·Granted Nov 19, 2002·16 cites·14 claims
- 4050US6461962B1Etching methodTOKYO ELECTRON LTD·Filed 2000·Granted Oct 8, 2002·2 cites·6 claims
- 4143US9368601B2Method for forming oxide below control gate in vertical channel thin film transistorSANDISK 3D LLC·Filed 2014·Granted Jun 14, 2016·0 cites·20 claims
- 4243US9177964B2Methods of forming sidewall gatesSANDISK 3D LLC·Filed 2013·Granted Nov 3, 2015·0 cites·19 claims
- 4340US2003006216A1Etching apparatusFiled 2002·Application pending·0 cites
- 4437US10468459B2Multiple vertical TFT structures for a vertical bit line architectureSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 5, 2019·0 cites·19 claims
- 4537US2011244683A1Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical PolishingSANO MICHIAKI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →