Inventor · disambiguated record
Min Gyu Sung
Also filed as: SUNG MIN GYU
179 granted patents·113 pending applications·1,657 citations·filing 2005–2024
99Inventor score
Files withIBM116GLOBALFOUNDRIES INC108VARIAN SEMICONDUCTOR EQUIPMENT ASS INC19HYNIX SEMICONDUCTOR INC16APPLIED MATERIALS INC12
Top patents by PatentIndex Score
292 records- 0199US10170484B1Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·61 cites·20 claims
- 0299US9947804B1Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 17, 2018·154 cites·14 claims
- 0399US9847390B1Self-aligned wrap-around contacts for nanosheet devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 19, 2017·74 cites·20 claims
- 0499US9780208B1Method and structure of forming self-aligned RMG gate for VFETGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 3, 2017·60 cites·19 claims
- 0599US9508604B1Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacersGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·51 cites·25 claims
- 0699US9412616B1Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 9, 2016·148 cites·22 claims
- 0799US9362181B1Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·69 cites·31 claims
- 0898US10103238B1Nanosheet field-effect transistor with full dielectric isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 16, 2018·57 cites·20 claims
- 0998US9911619B1Fin cut with alternating two color fin hardmaskGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 6, 2018·24 cites·19 claims
- 1098US9899321B1Methods of forming a gate contact for a semiconductor device above the active regionGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 20, 2018·26 cites·25 claims
- 1198US9865704B2Single and double diffusion breaks on integrated circuit products comprised of FinFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 9, 2018·41 cites·20 claims
- 1298US9799748B1Method of forming inner spacers on a nano-sheet/wire deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 24, 2017·33 cites·19 claims
- 1398US9780197B1Method of controlling VFET channel lengthGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 3, 2017·30 cites·20 claims
- 1498US9379017B1Method of forming a semiconductor structure including a plurality of fins and an alignment/overlay markGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 28, 2016·32 cites·18 claims
- 1597US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 1697US10157798B1Uniform bottom spacers in vertical field effect transistorsIBM·Filed 2017·Granted Dec 18, 2018·23 cites·13 claims
- 1797US9818836B1Gate cut method for replacement metal gate integrationGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 14, 2017·24 cites·15 claims
- 1897US9761495B1Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·24 cites·20 claims
- 1997US9691664B1Dual thick EG oxide integration under aggressive SG fin pitchGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 27, 2017·22 cites·17 claims
- 2097US9337101B1Methods for selectively removing a fin when forming FinFET devicesGLOBALFOUNDRIES INC·Filed 2015·Granted May 10, 2016·25 cites·28 claims
- 2196US10410933B2Replacement metal gate patterning for nanosheet devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 10, 2019·17 cites·18 claims
- 2296US10366930B1Self-aligned gate cut isolationGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 30, 2019·15 cites·20 claims
- 2396US9991131B1Dual mandrels to enable variable fin pitchGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 5, 2018·18 cites·18 claims
- 2496US9966456B1Methods of forming gate electrodes on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted May 8, 2018·14 cites·20 claims
- 2596US9735242B2Semiconductor device with a gate contact positioned above the active regionGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 15, 2017·17 cites·13 claims
- 2696US9425106B1Methods of performing fin cut etch processes for taper FinFET semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·15 cites·20 claims
- 2796US9190488B1Methods of forming gate structure of semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 17, 2015·21 cites·13 claims
- 2896US7713823B2Semiconductor device with vertical channel transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted May 11, 2010·33 cites·13 claims
- 2995US12317514B2Resistive random-access memory structures with stacked transistorsIBM·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 3095US10177041B2Fin-type field effect transistors (FINFETS) with replacement metal gates and methodsGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·11 cites·19 claims
- 3195US10121702B1Methods, apparatus and system for forming source/drain contacts using early trench silicide cutGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·13 cites·20 claims
- 3295US9722024B1Formation of semiconductor structures employing selective removal of finsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·12 cites·16 claims
- 3395US9502286B2Methods of forming self-aligned contact structures on semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 22, 2016·14 cites·20 claims
- 3495US9312183B1Methods for forming FinFETS having a capping layer for reducing punch through leakageGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·19 cites·14 claims
- 3594US10403738B1Techniques for improved spacer in nanosheet deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 3, 2019·11 cites·20 claims
- 3694US10038065B2Method of forming a semiconductor device with a gate contact positioned above the active regionGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 31, 2018·10 cites·20 claims
- 3794US10014389B2Methods of forming IC products comprising a nano-sheet device and a transistor device having first and second replacement gate structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 3, 2018·10 cites·22 claims
- 3894US9385189B1Fin liner integration under aggressive pitchGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·29 cites·13 claims
- 3993US10403552B1Replacement gate formation with angled etch and depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 3, 2019·7 cites·20 claims
- 4093US10388652B2Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 20, 2019·10 cites·14 claims
- 4193US10084053B1Gate cuts after metal gate formationGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·8 cites·20 claims
- 4293US9653356B2Methods of forming self-aligned device level contact structuresGLOBALFOUNDRIES INC·Filed 2015·Granted May 16, 2017·8 cites·20 claims
- 4393US9502308B1Methods for forming transistor devices with different source/drain contact liners and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 22, 2016·10 cites·20 claims
- 4492US10319627B2Air-gap spacers for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 11, 2019·7 cites·20 claims
- 4592US10014297B1Methods of forming integrated circuit structure using extreme ultraviolet photolithography technique and related integrated circuit structureGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·9 cites·20 claims
- 4692US9779960B2Hybrid fin cutting processes for FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 3, 2017·9 cites·28 claims
- 4792US9595583B2Methods for forming FinFETS having a capping layer for reducing punch through leakageGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 14, 2017·8 cites·13 claims
- 4892US9362377B1Low line resistivity and repeatable metal recess using CVD cobalt reflowGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·8 cites·19 claims
- 4991US12396227B2Full wrap around backside contactIBM·Filed 2022·Granted Aug 19, 2025·1 cites·18 claims
- 5091US11456179B2Methods for forming semiconductor device having uniform fin pitchAPPLIED MATERIALS INC·Filed 2020·Granted Sep 27, 2022·2 cites·17 claims
Showing the top 50 of 292 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →