Inventor · disambiguated record
Michael Treu
Also filed as: TREU MICHAEL · TREU MICHAEL FRANZ
33 granted patents·4 pending applications·148 citations·filing 2002–2025
96Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG10INFINEON TECHNOLOGIES AUSTRIA8INFINEON TECHNOLOGIES AG5TREU MICHAEL3OTREMBA RALF2
Top patents by PatentIndex Score
37 records- 0194US8530904B2Semiconductor device including a normally-on transistor and a normally-off transistorTREU MICHAEL·Filed 2010·Granted Sep 10, 2013·22 cites·23 claims
- 0293US8525254B2Silicone carbide trench semiconductor deviceTREU MICHAEL·Filed 2010·Granted Sep 3, 2013·21 cites·22 claims
- 0391US8866253B2Semiconductor arrangement with active drift zoneWEIS ROLF·Filed 2012·Granted Oct 21, 2014·12 cites·20 claims
- 0483US8803205B2Transistor with controllable compensation regionsWILLMEROTH ARMIN·Filed 2012·Granted Aug 12, 2014·7 cites·28 claims
- 0583US6905916B2Method for processing a surface of an SiC semiconductor layer and Schottky contactINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 14, 2005·31 cites·11 claims
- 0682US10923432B2Method of manufacturing a semiconductor device with epitaxial layers and an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 16, 2021·1 cites·18 claims
- 0782US8450196B2Production of an integrated circuit including electrical contact on SiCRUPP ROLAND·Filed 2007·Granted May 28, 2013·7 cites·5 claims
- 0878US7772621B2Semiconductor device with structured current spread region and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Aug 10, 2010·7 cites·20 claims
- 0977US11923276B2Semiconductor device including a bidirectional switchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Mar 5, 2024·0 cites·10 claims
- 1077US7763506B2Method for making an integrated circuit including vertical junction field effect transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jul 27, 2010·7 cites·14 claims
- 1177US7745273B2Semiconductor device and method for forming sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jun 29, 2010·5 cites·24 claims
- 1276US10347490B2Production of an integrated circuit including electrical contact on SiCINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jul 9, 2019·1 cites·19 claims
- 1374US8253225B2Device including semiconductor chip and leads coupled to the semiconductor chip and manufacturing thereofOTREMBA RALF·Filed 2008·Granted Aug 28, 2012·6 cites·19 claims
- 1472US11605577B2Semiconductor device including a bidirectional switchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Mar 14, 2023·0 cites·5 claims
- 1569US11329126B2Method of manufacturing a superjunction semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted May 10, 2022·1 cites·20 claims
- 1669US7910983B2MOS transistor having an increased gate-drain capacitanceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Mar 22, 2011·3 cites·6 claims
- 1767US10600740B2Method of manufacturing a semiconductor device with epitaxial layers and an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 24, 2020·0 cites·19 claims
- 1864US8102012B2Transistor component having a shielding structurePETERS DETHARD·Filed 2009·Granted Jan 24, 2012·4 cites·36 claims
- 1964US7538362B2Lateral semiconductor diode and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 26, 2009·3 cites·10 claims
- 2063US9530764B2Semiconductor arrangement with active drift zoneINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Dec 27, 2016·1 cites·22 claims
- 2163US8492771B2Heterojunction semiconductor device and methodRUEB MICHAEL·Filed 2007·Granted Jul 23, 2013·3 cites·13 claims
- 2261US8188482B2SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing methodTREU MICHAEL·Filed 2008·Granted May 29, 2012·3 cites·14 claims
- 2359US10236258B2Method of manufacturing a semiconductor device with epitaxial layers and an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Mar 19, 2019·0 cites·11 claims
- 2459US9431392B2Electronic circuit having adjustable transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Aug 30, 2016·1 cites·20 claims
- 2559US8183660B2Semiconductor component having rectifying junctions of different magnitudes and method for producing the sameRUEB MICHAEL·Filed 2008·Granted May 22, 2012·2 cites·21 claims
- 2659US2015041831A1PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiCINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Application pending·0 cites
- 2757US11217510B2Semiconductor device including a bidirectional switchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jan 4, 2022·0 cites·6 claims
- 2857US8895422B2Production of an integrated circuit including electrical contact on SiCINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 25, 2014·0 cites·7 claims
- 2956US9634108B2Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etchingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 25, 2017·0 cites·12 claims
- 3056US9391154B2Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etchingINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 12, 2016·0 cites·14 claims
- 3155US2025386556A1Transistor including a silicon layer in a trench structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 3253US9263443B2Semiconductor device including a normally-off transistor and transistor cells of a normally-on GaN HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Feb 16, 2016·0 cites·10 claims
- 3352US9209281B2Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etchingRUPP ROLAND·Filed 2007·Granted Dec 8, 2015·0 cites·25 claims
- 3448US8421147B2MOS transistor with elevated gate drain capacityWILLMEROTH ARMIN·Filed 2010·Granted Apr 16, 2013·0 cites·10 claims
- 3547US8618644B2Electronic device and manufacturing thereofOTREMBA RALF·Filed 2012·Granted Dec 31, 2013·0 cites·15 claims
- 3644US2008017947A1Circuit having a schottky contact componentINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 3742US2009184373A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →