Inventor · disambiguated record
Ming-Tsung Tung
Also filed as: TUNG MING-TSUNG
42 granted patents·6 pending applications·643 citations·filing 1998–2008
98Inventor score
Files withUNITED MICROELECTRONICS CORP41CHEN JUNG-CHING2LIN CHIEN-MING1LIU MEI-JEN1UNITED MICROLELECTRONICS CORP1
Top patents by PatentIndex Score
48 records- 0192US7118954B1High voltage metal-oxide-semiconductor transistor devices and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 10, 2006·24 cites·6 claims
- 0286US7244975B2High-voltage device structureUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jul 17, 2007·15 cites·10 claims
- 0386US6277675B1Method of fabricating high voltage MOS deviceUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 21, 2001·67 cites·18 claims
- 0483US6392274B1High-voltage metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2000·Granted May 21, 2002·33 cites·19 claims
- 0581US6198131B1High-voltage metal-oxide semiconductorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 6, 2001·46 cites·20 claims
- 0681US6117738AMethod for fabricating a high-bias semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 12, 2000·49 cites·20 claims
- 0780US8026549B2LDMOS with N-type isolation ring and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2008·Granted Sep 27, 2011·9 cites·16 claims
- 0878US6376296B2High-voltage device and method for manufacturing high-voltage deviceUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 23, 2002·23 cites·20 claims
- 0977US6144069ALDMOS transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 7, 2000·40 cites·9 claims
- 1076US7868372B2Depletion-mode single-poly EEPROM cellUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jan 11, 2011·10 cites·20 claims
- 1173US6262459B1High-voltage device and method for manufacturing high-voltage deviceUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jul 17, 2001·17 cites·9 claims
- 1269US7560774B1IC chipUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jul 14, 2009·5 cites·20 claims
- 1368US7256095B2High voltage metal-oxide-semiconductor transistor devices and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 14, 2007·3 cites·7 claims
- 1466US6127213AMethod for simultaneously forming low voltage and high voltage devicesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 3, 2000·25 cites·10 claims
- 1562US6319776B1Forming high voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 20, 2001·21 cites·17 claims
- 1660US6238959B1Method of fabricating LDMOS transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 29, 2001·19 cites·11 claims
- 1760US6222247B1Semiconductor resistor that can be withstand high voltagesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 24, 2001·19 cites·11 claims
- 1858US6316299B1Formation of laterally diffused metal-oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 13, 2001·18 cites·18 claims
- 1958US6150219AMethod for fabricating a high bias deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 21, 2000·18 cites·17 claims
- 2056US6372579B1Producing laterally diffused metal-oxide semiconductorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 16, 2002·16 cites·16 claims
- 2154US6429077B1Method of forming a lateral diffused metal-oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 6, 2002·14 cites·11 claims
- 2254US6194772B1High-voltage semiconductor device with trench structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 27, 2001·14 cites·17 claims
- 2353US6133606AHigh voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 17, 2000·14 cites·13 claims
- 2451US6239000B1Method of forming isolation structure for isolating high voltage devicesUNITED MICROELECTRONICS CORP·Filed 2000·Granted May 29, 2001·4 cites·19 claims
- 2551US6023092ASemiconductor resistor for withstanding high voltagesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 8, 2000·13 cites·6 claims
- 2649US6258670B1Method for improving breakdown voltage of a semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 10, 2001·11 cites·12 claims
- 2748US6110803AMethod for fabricating a high-bias deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 29, 2000·14 cites·13 claims
- 2847US5976923AMethod for fabricating a high-voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 2, 1999·10 cites·13 claims
- 2946US2007254417A1Method of fabricating a semiconductor device having a capacitorUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 3045US6391698B1Forming complementary metal-oxide semiconductor with gradient doped source/drainUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 21, 2002·9 cites·11 claims
- 3143US2007141776A1Semiconductor device having capacitor and fabricating method thereofCHEN JUNG-CHING·Filed 2005·Application pending·0 cites
- 3242US6214674B1Method of fabricating high voltage device suitable for low voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Apr 10, 2001·10 cites·18 claims
- 3342US2007273001A1System on chip and method for manufacturing the sameCHEN JUNG-CHING·Filed 2006·Application pending·0 cites
- 3442US2006270162A1High voltage metal-oxide-semiconductor transistor devices and method of making the sameLIN CHIEN-MING·Filed 2006·Application pending·0 cites
- 3541US6281080B1Fabrication method in improving ESD ability and vertical BJT gainUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 28, 2001·9 cites·25 claims
- 3641US5976922AMethod for fabricating a high bias device compatible with a low bias deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 2, 1999·7 cites·18 claims
- 3739US2006211232A1Method for Manufacturing Gold BumpsLIU MEI-JEN·Filed 2005·Application pending·0 cites
- 3838US6180539B1Method of forming an inter-poly oxide layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 30, 2001·5 cites·18 claims
- 3938US6130133AFabricating method of high-voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 10, 2000·5 cites·8 claims
- 4037US6291303B1Method for manufacturing a bipolar junction deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 18, 2001·5 cites·6 claims
- 4136US6285059B1Structure for laterally diffused metal-oxide semiconductorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Sep 4, 2001·4 cites·6 claims
- 4236US6140196AMethod of fabricating high power bipolar junction transistorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 31, 2000·4 cites·12 claims
- 4336US6140193AMethod for forming a high-voltage semiconductor device with trench structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 31, 2000·4 cites·15 claims
- 4434US2002009842A1High-voltage device and method for manufacturing high-voltage deviceFiled 2001·Application pending·0 cites
- 4532US6136671AMethod for forming gate oxide layersUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 24, 2000·1 cites·9 claims
- 4631US6063671AMethod of forming a high-voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 16, 2000·1 cites·12 claims
- 4730US6133117AMethod of forming trench isolation for high voltage deviceUNITED MICROLELECTRONICS CORP·Filed 1999·Granted Oct 17, 2000·5 cites·14 claims
- 4829US6156603AManufacturing method for reducing the thickness of a dielectric layerUNITED MIRCROELECTRONICS CORP·Filed 1998·Granted Dec 5, 2000·3 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →