Inventor · disambiguated record
Michael Vogel
Also filed as: VOGEL MICHAEL · VOGEL MICHAEL CLAUS SIEGFRIED
18 granted patents·18 pending applications·55 citations·filing 2010–2025
90Inventor score
Top patents by PatentIndex Score
36 records- 0194US8865324B2Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distributionSTRAUBINGER THOMAS·Filed 2010·Granted Oct 21, 2014·34 cites·7 claims
- 0292US11236438B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Feb 1, 2022·4 cites·5 claims
- 0391US8747982B2Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 10, 2014·10 cites·27 claims
- 0482US9590046B2Monocrystalline SiC substrate with a non-homogeneous lattice plane courseSICRYSTAL AG·Filed 2014·Granted Mar 7, 2017·2 cites·7 claims
- 0577US8758510B2Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 24, 2014·1 cites·12 claims
- 0676US12157955B2Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transportSICRYSTAL GMBH·Filed 2022·Granted Dec 3, 2024·0 cites·15 claims
- 0776US9732438B2Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrateSICRYSTAL AG·Filed 2015·Granted Aug 15, 2017·2 cites·13 claims
- 0873US11781245B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2021·Granted Oct 10, 2023·0 cites·6 claims
- 0969US11041254B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Jun 22, 2021·1 cites·18 claims
- 1067US2025198046A1Crucible for producing a sic volume mono crystal and a method for growing a sic volume mono crystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1166US11624124B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Apr 11, 2023·1 cites·4 claims
- 1265US11560643B2System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transportSICRYSTAL GMBH·Filed 2020·Granted Jan 24, 2023·0 cites·12 claims
- 1364US12460314B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2023·Granted Nov 4, 2025·0 cites·15 claims
- 1464US2024263347A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1564US2024263346A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1664US2024309546A1Sublimation System And Method Of Growing At Least One Single CrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1764US2024318352A1Method and apparatus for the thermal post-treatment of at least one sic volume monocrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1864US2024309545A1Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor MaterialSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1963US2025198048A1Arrangement for growing a sic volume monocrystal and growing methodSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 2062US2024003054A1Production method for an sic volume monocrystal of inhomogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 2162US2023416939A1Production method for an sic volume monocrystal of homogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 2256US2025283247A1Seed unit and apparatus for growing a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2354US9376764B2Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growingSICRYSTAL AG·Filed 2013·Granted Jun 28, 2016·0 cites·17 claims
- 2452US2025313990A1Layered Substrate, Method of Fabrication of a Layered Substrate and Method for Growing an Epitaxial Layer with the Layered SubstrateSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2552US2025313987A1Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered SeedSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2652US2025313988A1Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the SameSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2752US2023317780A1Monocrystalline SIC Substrates Having an Asymmetrical Geometry and Method of Producing SameSICRYSTAL GMBH·Filed 2022·Application pending·0 cites
- 2852US2025283246A1Production method for a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2950US11474283B2Super resolution for magneto-optical microscopyUCHICAGO ARGONNE LLC·Filed 2020·Granted Oct 18, 2022·0 cites·18 claims
- 3048US11479875B2System for horizontal growth of high-quality semiconductor single crystals by physical vapor transportSICRYSTAL GMBH·Filed 2020·Granted Oct 25, 2022·0 cites·9 claims
- 3145US2023349071A1Crystal Structure Orientation in Semiconductor Semi-Finished Products and Semiconductor Substrates for Fissure Reduction and Method of Setting SameSICRYSTAL GMBH·Filed 2021·Application pending·0 cites
- 3242US11261536B2Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element densitySI CRYSTAL GMBH·Filed 2020·Granted Mar 1, 2022·0 cites·21 claims
- 3341US12195878B2SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing sameSICRYSTAL GMBH·Filed 2021·Granted Jan 14, 2025·0 cites·14 claims
- 3440US11515140B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Nov 29, 2022·0 cites·6 claims
- 3540US2011086213A1Method of producing a silicon carbide bulk single crystal with thermal treatment, and low-impedance monocrystalline silicon carbide substrateSICRYSTAL AG·Filed 2010·Application pending·0 cites
- 3639US2022025545A1Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing sameSICRYSTAL GMBH·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →