Inventor · disambiguated record
Mingmei Wang
Also filed as: WANG MINGMEI
22 granted patents·12 pending applications·46 citations·filing 2012–2024
91Inventor score
Top patents by PatentIndex Score
34 records- 0197US9768033B2Methods for high precision etching of substratesTOKYO ELECTRON LTD·Filed 2015·Granted Sep 19, 2017·29 cites·19 claims
- 0286US11024508B2Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etchingTOKYO ELECTRON LTD·Filed 2020·Granted Jun 1, 2021·2 cites·19 claims
- 0384US10211065B2Methods for high precision plasma etching of substratesTOKYO ELECTRON LTD·Filed 2015·Granted Feb 19, 2019·3 cites·11 claims
- 0482US10483127B2Methods for high precision plasma etching of substratesTOKYO ELECTRON LTD·Filed 2018·Granted Nov 19, 2019·2 cites·10 claims
- 0581US8916472B2Interconnect formation using a sidewall mask layerHU XIANG·Filed 2012·Granted Dec 23, 2014·6 cites·18 claims
- 0679US11837471B2Methods of patterning small featuresTOKYO ELECTRON LTD·Filed 2020·Granted Dec 5, 2023·1 cites·18 claims
- 0775US9881807B2Method for atomic layer etchingTOKYO ELECTRON LTD·Filed 2016·Granted Jan 30, 2018·2 cites·20 claims
- 0863US12400863B2Method for etching for semiconductor fabricationTOKYO ELECTRON LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 0963US12131887B2Plasma processing system and method using radio frequency and microwave powerTOKYO ELECTRON LTD·Filed 2021·Granted Oct 29, 2024·0 cites·22 claims
- 1061US11887815B2Plasma processing system and method using radio frequency (RF) and microwave powerTOKYO ELECTRON LTD·Filed 2021·Granted Jan 30, 2024·0 cites·18 claims
- 1160US12308212B2In-situ adsorbate formation for plasma etch processTOKYO ELECTRON LTD·Filed 2022·Granted May 20, 2025·0 cites·16 claims
- 1260US12237172B2Etch process for oxide of alkaline earth metalTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·18 claims
- 1360US2025308895A1Selective in-situ carbon-based mask protectionTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1459US2025300007A1Plasma assisted metal oxide reductionTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1557US9401263B2Feature etching using varying supply of power pulsesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 26, 2016·1 cites·20 claims
- 1655US12424447B2Method to selectively etch silicon nitride to silicon oxide using water crystallizationTOKYO ELECTRON LTD·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 1755US12131914B2Selective etching with fluorine, oxygen and noble gas containing plasmasTOKYO ELECTRON LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 1855US11804380B2High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formationTOKYO ELECTRON LTD·Filed 2021·Granted Oct 31, 2023·0 cites·17 claims
- 1955US11538692B2Cyclic plasma etching of carbon-containing materialsTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2054US2024332029A1High aspect ratio contact etching with additive gasTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2154US2025046603A1Atomic Layer Deposition of Passivation LayerTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2253US2024071808A1Methods for forming semiconductor devices with isolation structuresTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2352US2024162043A1Sidewall Inorganic Passivation for Dielectric Etching Via Surface ModificationTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2452US2024071746A1Plasma surface treatment for wafer bonding methodsTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2551US11189499B2Atomic layer etch (ALE) of tungsten or other metal layersTOKYO ELECTRON LTD·Filed 2020·Granted Nov 30, 2021·0 cites·23 claims
- 2651US2024112919A1Low-Temperature EtchTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2751US2024112888A1In-Situ Adsorbate Formation for Dielectric EtchTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2850US11152217B2Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride depositionTOKYO ELECTRON LTD·Filed 2020·Granted Oct 19, 2021·0 cites·20 claims
- 2949US2022199410A1Conformal amorphous carbon layer etch with side-wall passivationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 3048US11232954B2Sidewall protection layer formation for substrate processingTOKYO ELECTRON LTD·Filed 2020·Granted Jan 25, 2022·0 cites·22 claims
- 3148US11158517B2Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsingTOKYO ELECTRON LTD·Filed 2020·Granted Oct 26, 2021·0 cites·19 claims
- 3246US2023081862A1Focus Ring RegenerationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 3345US2021233775A1High-throughput dry etching of silicon oxide and silicon nitride materials by in-situ autocatalyst formationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 3437US10490404B2Method of in situ hard mask removalTOKYO ELECTRON LTD·Filed 2017·Granted Nov 26, 2019·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →