Inventor · disambiguated record
Mohit Bajaj
Also filed as: BAJAJ MOHIT
29 granted patents·3 pending applications·77 citations·filing 2011–2022
95Inventor score
Top patents by PatentIndex Score
32 records- 0197US9583486B1Stable work function for narrow-pitch devicesIBM·Filed 2015·Granted Feb 28, 2017·20 cites·8 claims
- 0294US10170576B2Stable work function for narrow-pitch devicesIBM·Filed 2017·Granted Jan 1, 2019·7 cites·14 claims
- 0394US9627484B1Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layerIBM·Filed 2015·Granted Apr 18, 2017·7 cites·15 claims
- 0492US9379253B1Symmetric tunnel field effect transistorIBM·Filed 2015·Granted Jun 28, 2016·6 cites·17 claims
- 0590US9735250B2Stable work function for narrow-pitch devicesIBM·Filed 2016·Granted Aug 15, 2017·4 cites·15 claims
- 0689US9613867B2Symmetric tunnel field effect transistorIBM·Filed 2016·Granted Apr 4, 2017·4 cites·11 claims
- 0788US9589635B2Semiconductor device with a stoichiometric gradientIBM·Filed 2014·Granted Mar 7, 2017·6 cites·20 claims
- 0887US9419115B2Junctionless tunnel fet with metal-insulator transition materialIBM·Filed 2015·Granted Aug 16, 2016·5 cites·11 claims
- 0985US10373942B2Logic layout with reduced area and method of making the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 6, 2019·5 cites·10 claims
- 1083US9876084B2Symmetric tunnel field effect transistorIBM·Filed 2016·Granted Jan 23, 2018·2 cites·8 claims
- 1179US2023299170A1Stable work function for narrow-pitch devicesTESSERA LLC·Filed 2022·Application pending·0 cites
- 1277US9064976B1Modeling charge distribution on FinFET sidewallsIBM·Filed 2014·Granted Jun 23, 2015·4 cites·18 claims
- 1376US9911598B2Symmetric tunnel field effect transistorIBM·Filed 2017·Granted Mar 6, 2018·1 cites·9 claims
- 1469US8929039B2Silicon controlled rectifier (SCR) clamp including metal insulator transition (MIT) resistorBAJAJ MOHIT·Filed 2012·Granted Jan 6, 2015·2 cites·14 claims
- 1564US10366897B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2017·Granted Jul 30, 2019·0 cites·17 claims
- 1664US10347494B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2018·Granted Jul 9, 2019·0 cites·19 claims
- 1763US10319596B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2017·Granted Jun 11, 2019·0 cites·20 claims
- 1863US10164027B2Symmetric tunnel field effect transistorIBM·Filed 2017·Granted Dec 25, 2018·0 cites·9 claims
- 1963US10163716B2Symmetric tunnel field effect transistorIBM·Filed 2017·Granted Dec 25, 2018·0 cites·13 claims
- 2063US9419016B2Junctionless tunnel FET with metal-insulator transition materialIBM·Filed 2014·Granted Aug 16, 2016·1 cites·20 claims
- 2163US8450792B2Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)BAJAJ MOHIT·Filed 2011·Granted May 28, 2013·2 cites·20 claims
- 2260US9984883B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2016·Granted May 29, 2018·0 cites·8 claims
- 2359US9972497B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2016·Granted May 15, 2018·0 cites·18 claims
- 2459US9105498B2Gate strain induced work function engineeringBAJAJ MOHIT·Filed 2012·Granted Aug 11, 2015·1 cites·18 claims
- 2557US9705079B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jul 11, 2017·0 cites·1 claims
- 2657US2017148890A1Stable work function for narrow-pitch devicesIBM·Filed 2016·Application pending·0 cites
- 2756US9680096B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jun 13, 2017·0 cites·1 claims
- 2855US9508930B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Nov 29, 2016·0 cites·1 claims
- 2953US9647210B2Tunable voltage margin access diodesIBM·Filed 2015·Granted May 9, 2017·0 cites·17 claims
- 3052US9070579B2Gate strain induced work function engineeringIBM·Filed 2014·Granted Jun 30, 2015·0 cites·16 claims
- 3148US11387364B2Transistor with phase transition material region between channel region and each source/drain regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 3244US2015192533A1Method of modeling concentration of reducible mobile ionic dopant in semiconductor device simulatorIBM·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →