Inventor · disambiguated record
Monica Titus
Also filed as: TITUS MONICA
15 granted patents·3 pending applications·59 citations·filing 2012–2023
89Inventor score
Top patents by PatentIndex Score
18 records- 0198US11621277B2Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 4, 2023·5 cites·8 claims
- 0296US9245761B2Internal plasma grid for semiconductor fabricationLAM RES CORP·Filed 2013·Granted Jan 26, 2016·21 cites·19 claims
- 0393US10224221B2Internal plasma grid for semiconductor fabricationLAM RES CORP·Filed 2016·Granted Mar 5, 2019·7 cites·20 claims
- 0491US9230819B2Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processingLAM RES CORP·Filed 2014·Granted Jan 5, 2016·15 cites·30 claims
- 0590US9633846B2Internal plasma grid applications for semiconductor fabricationLAM RES CORP·Filed 2015·Granted Apr 25, 2017·8 cites·23 claims
- 0682US11515250B2Three dimensional semiconductor device containing composite contact via structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 29, 2022·1 cites·20 claims
- 0776US9966270B2Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformityLAM RES CORP·Filed 2015·Granted May 8, 2018·2 cites·18 claims
- 0860US2024237343A9Three-dimensional memory device and method of making thereof using etch stop structures located between tiersSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0957US12261080B2Method of making a three-dimensional memory device using composite hard masks for formation of deep via openingsSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 1057US12243776B2Method of making a three-dimensional memory device using composite hard masks for formation of deep via openingsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 1156US11972954B2Method of making a three-dimensional memory device using composite hard masks for formation of deep via openingsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·0 cites·20 claims
- 1255US12010841B2Method of making a three-dimensional memory device using composite hard masks for formation of deep via openingsSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 11, 2024·0 cites·22 claims
- 1353US12245434B2Method of making a three-dimensional memory device using composite hard masks for formation of deep via openingsSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 1453US10460951B2Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformityLAM RES CORP·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 1549US12250817B2Method of making a three-dimensional memory device using composite hard masks for formation of deep via openingsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Mar 11, 2025·0 cites·19 claims
- 1649US2018331117A1Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Application pending·0 cites
- 1744US9589853B2Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamberLAM RES CORP·Filed 2014·Granted Mar 7, 2017·0 cites·20 claims
- 1832US2014030893A1Method for shrink and tune trench/via cdKUO MING-SHU·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →