Inventor · disambiguated record
Morris Young
Also filed as: LARBALESTIER DAVID C · YOUNG MORRIS · YOUNG MORRIS S · YOUNG MORRIS S S
14 granted patents·8 pending applications·198 citations·filing 1976–2024
91Inventor score
Top patents by PatentIndex Score
22 records- 0189US12054851B2Low etch pit density, low slip line density, and low strain indium phosphideAXT INC·Filed 2023·Granted Aug 6, 2024·1 cites·9 claims
- 0282US11608569B2Low etch pit density, low slip line density, and low strain indium phosphideAXT INC·Filed 2021·Granted Mar 21, 2023·1 cites·17 claims
- 0382US5169486ACrystal growth apparatus and processBESTAL CORP·Filed 1991·Granted Dec 8, 1992·75 cites·7 claims
- 0481US7566641B2Low etch pit density (EPD) semi-insulating GaAs wafersAXT INC·Filed 2007·Granted Jul 28, 2009·8 cites·11 claims
- 0581US4242536AAluminum-stabilized multifilamentary superconductorAIRCO INC·Filed 1979·Granted Dec 30, 1980·30 cites·1 claims
- 0679US4148129AAluminum-stabilized multifilamentary superconductor and method of its manufactureAIRCO INC·Filed 1976·Granted Apr 10, 1979·30 cites·12 claims
- 0778US12084790B2Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 0878US4224735AMethod of production multifilamentary intermetallic superconductorsAIRCO INC·Filed 1979·Granted Sep 30, 1980·25 cites·1 claims
- 0977US2024426025A1Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2024·Application pending·0 cites
- 1075US2024384436A1Low etch pit density, low slip line density, and low strain indium phosphideAXT INC·Filed 2024·Application pending·0 cites
- 1167US4205119AWrapped tantalum diffusion barrierAIRCO INC·Filed 1978·Granted May 27, 1980·21 cites·3 claims
- 1265US11680340B2Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2019·Granted Jun 20, 2023·0 cites·14 claims
- 1358US8361225B2Low etch pit density (EPD) semi-insulating III-V wafersAXT INC·Filed 2011·Granted Jan 29, 2013·1 cites·2 claims
- 1456US12276044B2Low etch pit density gallium arsenide crystals with boron dopantAXT INC·Filed 2019·Granted Apr 15, 2025·0 cites·11 claims
- 1554US2010001288A1Low Etch Pit Density (EPD) Semi-Insulating GaAs WafersAXT INC·Filed 2009·Application pending·0 cites
- 1651US2011089538A1Low etch pit density (epd) semi-insulating iii-v wafersLIU WEIGUO·Filed 2008·Application pending·0 cites
- 1741US2006183329A1Apparatus and method for reducing impurities in a semiconductor materialAXT INC·Filed 2004·Application pending·0 cites
- 1839US4285740AWrapped tantalum diffusion barrierAIRCO INC·Filed 1979·Granted Aug 25, 1981·6 cites·4 claims
- 1938US2004173140A1Apparatus and method for balanced pressure growth of Group III-V monocrystalline semiconductor compoundsFiled 2003·Application pending·0 cites
- 2037US2016053404A1Controllable oxygen concentration in semiconductor substrateBEIJING TONGMEI XTAL TECHNOLOGY CO LTD·Filed 2013·Application pending·0 cites
- 2132US9691617B2IIIA-VA group semiconductor single crystal substrate and method for preparing sameYOUNG MORRIS·Filed 2012·Granted Jun 27, 2017·0 cites·9 claims
- 2231US2004173315A1Apparatus and method for reducing impurities in a semiconductor materialFiled 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Morris Young files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →