Inventor · disambiguated record
Myung-Hee Na
Also filed as: NA Myung Hee
26 granted patents·6 pending applications·158 citations·filing 2005–2025
95Inventor score
Top patents by PatentIndex Score
32 records- 0196US9735029B1Metal fill optimization for self-aligned double patterningIBM·Filed 2016·Granted Aug 15, 2017·22 cites·9 claims
- 0296US8354309B2Method of providing threshold voltage adjustment through gate dielectric stack modificationIBM·Filed 2012·Granted Jan 15, 2013·24 cites·20 claims
- 0395US8928086B2Strained finFET with an electrically isolated channelIBM·Filed 2013·Granted Jan 6, 2015·19 cites·15 claims
- 0495US7011980B1Method and structures for measuring gate tunneling leakage parameters of field effect transistorsIBM·Filed 2005·Granted Mar 14, 2006·34 cites·33 claims
- 0594US10892331B2Channel orientation of CMOS gate-all-around field-effect transistor devices for enhanced carrier mobilityIBM·Filed 2019·Granted Jan 12, 2021·9 cites·20 claims
- 0694US9190520B2Strained finFET with an electrically isolated channelIBM·Filed 2014·Granted Nov 17, 2015·15 cites·18 claims
- 0787US9171935B2FinFET formation with late fin revealIBM·Filed 2014·Granted Oct 27, 2015·9 cites·20 claims
- 0884US10381068B2Ultra dense and stable 4T SRAM cell design having NFETs and PFETsIBM·Filed 2017·Granted Aug 13, 2019·4 cites·20 claims
- 0982US10833267B2Structure and method to form phase change memory cell with self- align top electrode contactIBM·Filed 2018·Granted Nov 10, 2020·3 cites·10 claims
- 1079US9029913B2Silicon-germanium fins and silicon fins on a bulk substrateIBM·Filed 2013·Granted May 12, 2015·5 cites·22 claims
- 1178US8106455B2Threshold voltage adjustment through gate dielectric stack modificationGREENE BRIAN J·Filed 2009·Granted Jan 31, 2012·6 cites·19 claims
- 1274US10693005B2Reliable gate contacts over active areasIBM·Filed 2019·Granted Jun 23, 2020·1 cites·7 claims
- 1373US10614877B14T static random access memory bitcell retentionIBM·Filed 2019·Granted Apr 7, 2020·3 cites·20 claims
- 1473US10381480B2Reliable gate contacts over active areasINT BUSNIESS MACHINES CORPORATION·Filed 2017·Granted Aug 13, 2019·2 cites·9 claims
- 1571US10937961B2Structure and method to form bi-layer composite phase-change-memory cellIBM·Filed 2018·Granted Mar 2, 2021·1 cites·23 claims
- 1671US10424574B2Standard cell architecture with at least one gate contact over an active areaIBM·Filed 2017·Granted Sep 24, 2019·1 cites·13 claims
- 1762US11101367B2Contact-first field-effect transistorsIBM·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 1860US2025371240A1Semiconductor design system and method of designing a semiconductor device using the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1958US10424576B2Standard cell architecture with at least one gate contact over an active areaIBM·Filed 2017·Granted Sep 24, 2019·0 cites·10 claims
- 2056US8648647B2Determining current of a first FET of body connected FETsIBM·Filed 2013·Granted Feb 11, 2014·0 cites·12 claims
- 2155US2025133723A1Stack type semiconductor memory deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2255US2025126782A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2351US10381338B2Metal fill optimization for self-aligned double patterningIBM·Filed 2017·Granted Aug 13, 2019·0 cites·20 claims
- 2451US7795098B1Rotated field effect transistors and method of manufactureIBM·Filed 2007·Granted Sep 14, 2010·0 cites·20 claims
- 2548US7335563B2Rotated field effect transistors and method of manufactureIBM·Filed 2005·Granted Feb 26, 2008·0 cites·2 claims
- 2648US2025356931A1Data storage device and method of operating the sameSK HYNIX INC·Filed 2025·Application pending·0 cites
- 2746US2016372600A1Contact-first field-effect transistorsIBM·Filed 2015·Application pending·0 cites
- 2844US8542058B2Semiconductor device including body connected FETsNA MYUNG-HEE·Filed 2011·Granted Sep 24, 2013·0 cites·1 claims
- 2942US9520391B1Field effect transistor having delay element with back gateGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 13, 2016·0 cites·20 claims
- 3042US8032349B2Efficient methodology for the accurate generation of customized compact model parameters from electrical test dataIBM·Filed 2007·Granted Oct 4, 2011·0 cites·15 claims
- 3142US2007048925A1Body-Contacted Silicon on Insulation (SOI) field effect transistorsIBM·Filed 2005·Application pending·0 cites
- 3241US10803933B2Self-aligned high density and size adjustable phase change memoryIBM·Filed 2018·Granted Oct 13, 2020·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →