Inventor · disambiguated record
Navneet Jain
Also filed as: JAIN NAVNEET · JAIN NAVNEET K
41 granted patents·29 pending applications·126 citations·filing 2012–2025
96Inventor score
Files withGLOBALFOUNDRIES US INC31MASTERCARD INTERNATIONAL INC19GLOBALFOUNDRIES INC14RASHED MAHBUB2GLOBALFOUNDARIES INC1
Top patents by PatentIndex Score
70 records- 0198US9337099B1Special constructs for continuous non-uniform active region FinFET standard cellsGLOBALFOUNDRIES INC·Filed 2015·Granted May 10, 2016·53 cites·12 claims
- 0297US10909298B1Well contact cell with doped tap region separated from active region, and methods to form sameGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Feb 2, 2021·12 cites·20 claims
- 0394US12046603B2Semiconductor structure including sectioned well regionGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 23, 2024·2 cites·20 claims
- 0494US10199378B2Special construct for continuous non-uniform active region FinFET standard cellsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 5, 2019·8 cites·20 claims
- 0592US10366954B1Structure and method for flexible power staple insertionGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 30, 2019·8 cites·6 claims
- 0691US9893063B2Special construct for continuous non-uniform active region FinFET standard cellsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 13, 2018·6 cites·11 claims
- 0789US9196548B2Methods of using a trench salicide routing layerRASHED MAHBUB·Filed 2012·Granted Nov 24, 2015·11 cites·18 claims
- 0887US10360334B2Context aware processing to resolve strong spacing effects due to strain relaxation in standard cell libraryGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 23, 2019·5 cites·20 claims
- 0986US11855642B1Programmable delay circuit including threshold-voltage programmable field effect transistorGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1085US11334867B2Methods and systems for facilitating payment transactions at point of sale terminalsMASTERCARD INTERNATIONAL INC·Filed 2019·Granted May 17, 2022·3 cites·20 claims
- 1179US9634003B2Special construct for continuous non-uniform RX FinFET standard cellsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·2 cites·11 claims
- 1279US8966423B2Integrating optimal planar and three-dimensional semiconductor design layoutsGLOBALFOUNDARIES INC·Filed 2013·Granted Feb 24, 2015·5 cites·12 claims
- 1376US10068918B2Contacting SOI subsratesGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 4, 2018·3 cites·19 claims
- 1475US11328276B2Electronic system and method for transaction processingMASTERCARD INTERNATIONAL INC·Filed 2019·Granted May 10, 2022·1 cites·16 claims
- 1574US10658294B2Structure and method for flexible power staple insertionGLOBALFOUNDRIES INC·Filed 2019·Granted May 19, 2020·1 cites·20 claims
- 1672US10303196B1On-chip voltage generator for back-biasing field effect transistors in a circuit blockGLOBALFOUNDRIES INC·Filed 2018·Granted May 28, 2019·2 cites·20 claims
- 1771US2025221051A1Cell layoutsGLOBALFOUNDRIES US INC·Filed 2025·Application pending·0 cites
- 1869US12394451B2Structure and method to ground reference voltage generatorGLOBALFOUNDRIES US INC·Filed 2023·Granted Aug 19, 2025·0 cites·19 claims
- 1967US12457799B2Antenna structureGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 28, 2025·0 cites·17 claims
- 2067US12288782B2Cell layoutsGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 29, 2025·0 cites·19 claims
- 2167US11151572B2System and method for electronic payment on deliveryMASTERCARD INTERNATIONAL INC·Filed 2018·Granted Oct 19, 2021·1 cites·20 claims
- 2266US12364000B1Device structures for a high-voltage semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2024·Granted Jul 15, 2025·0 cites·19 claims
- 2366US10096595B2Antenna diode circuit for manufacturing of semiconductor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 9, 2018·1 cites·20 claims
- 2465US12388427B2Retention flip-flop with multiple positive supply voltage domainsGLOBALFOUNDRIES US INC·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 2562US12501624B1Memory device structures that include a capacitorGLOBALFOUNDRIES US INC·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 2662US12328880B2Hierarchical memory architecture including on-chip multi-bank non-volatile memory with low leakage and low latencyGLOBALFOUNDRIES US INC·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 2762US12176023B2Non-volatile static random access memory bit cells with ferroelectric field-effect transistorsGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 2862US2024387668A1Nanosheet structures with tunable channels and inner sidewall spacersGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2961US12386379B2Non-volatile current mirror circuit with programmable transistorGLOBALFOUNDRIES US INC·Filed 2023·Granted Aug 12, 2025·0 cites·17 claims
- 3060US11929399B2Deep nwell contact structuresGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 3160US11894845B1Structure and method for delaying of data signal from pulse latch with lockup latchGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 6, 2024·0 cites·14 claims
- 3259US12438078B2Local interconnect power rails and upper power railsGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 7, 2025·0 cites·17 claims
- 3359US12027226B2Structure including a cross-bar router and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3459US10333497B1Calibration devices for I/O driver circuits having switches biased differently for different temperaturesGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 25, 2019·1 cites·20 claims
- 3559US2025294877A1Isolation structure for multi-voltage integrated circuitGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 3658US12260163B2System and method employing power-optimized timing closureGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 3758US11979145B1Back bias control for always-on circuit section enabling leakage reduction during power saving modeGLOBALFOUNDRIES US INC·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 3857US2024183872A1Diagnostic instruments having sorting capability and sorting methods thereofSIEMENS HEALTHCARE DIAGNOSTICS INC·Filed 2022·Application pending·0 cites
- 3956US11741446B2Electronic system and method for transaction processingMASTERCARD INT INCORPORTED·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 4056US2020082394A1Method and system for processing payment transactionsMASTERCARD INTERNATIONAL INC·Filed 2019·Application pending·0 cites
- 4156US2025254985A1Finfet with gate-all-around structure including gate dielectric layer thicker in buried gate region than in outer gate regionGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 4256US2019392435A1Methods and systems for facilitating an online payment transactionMASTERCARD INTERNATIONAL INC·Filed 2019·Application pending·0 cites
- 4354US10896415B2System for executing a computer process for processing a transaction, and related computer processMASTERCARD INTERNATIONAL INC·Filed 2018·Granted Jan 19, 2021·0 cites·19 claims
- 4454US2025245410A1Method and system employing linear distance marker-based design layout analysisGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 4554US2025241062A1Structure with two work function metals over conductive bridge, and method to form sameGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 4653US11080663B2Electronic payment processing apparatus and methodMASTERCARD INTERNATIONAL INC·Filed 2018·Granted Aug 3, 2021·0 cites·17 claims
- 4753US2025040167A1Gate-all-around field effect transistorsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 4853US2019295072A1Authorization method and system for on-behalf transactionsMASTERCARD INTERNATIONAL INC·Filed 2019·Application pending·0 cites
- 4953US2024274603A1Standard cell and ic structure with trench isolation through active regions and gate electrodesGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 5053US2019043053A1Method and system for transaction authorizationMASTERCARD INTERNATIONAL INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →