Inventor · disambiguated record
Nanseng Jeng
Also filed as: JENG NANSENG
52 granted patents·2 pending applications·1,038 citations·filing 1993–2006
99Inventor score
Top patents by PatentIndex Score
54 records- 0195US5492853AMethod of forming a contact using a trench and an insulation layer during the formation of a semiconductor deviceMICRON SEMICONDUCTOR INC·Filed 1994·Granted Feb 20, 1996·112 cites·18 claims
- 0293US5741624AMethod for reducing photolithographic steps in a semiconductor interconnect processMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 21, 1998·100 cites·11 claims
- 0392US6373114B1Barrier in gate stack for improved gate dielectric integrityMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 16, 2002·76 cites·13 claims
- 0491US6562730B2Barrier in gate stack for improved gate dielectric integrityMICRON TECHNOLOGY INC·Filed 2001·Granted May 13, 2003·44 cites·19 claims
- 0587US5472904AThermal trench isolationMICRON TECHNOLOGY INC·Filed 1994·Granted Dec 5, 1995·77 cites·24 claims
- 0687US5438016AMethod of semiconductor device isolation employing polysilicon layer for field oxide formationMICRON SEMICONDUCTOR INC·Filed 1994·Granted Aug 1, 1995·80 cites·21 claims
- 0780US5637514AMethod of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 1995·Granted Jun 10, 1997·40 cites·21 claims
- 0879US6930363B2Barrier in gate stack for improved gate dielectric integrityMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 16, 2005·16 cites·15 claims
- 0977US6770571B2Barrier in gate stack for improved gate dielectric integrityMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 3, 2004·15 cites·20 claims
- 1073US5658829ASemiconductor processing method of forming an electrically conductive contact plugMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 19, 1997·33 cites·8 claims
- 1171US5661072AMethod for reducing oxide thinning during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 26, 1997·37 cites·20 claims
- 1270US5580821ASemiconductor processing method of forming an electrically conductive contact plugMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 3, 1996·40 cites·15 claims
- 1365US5629230ASemiconductor processing method of forming field oxide regions on a semiconductor substrate utilizing a laterally outward projecting foot portionMICRON TECHNOLOGY INC·Filed 1995·Granted May 13, 1997·33 cites·20 claims
- 1463US5972569AMethod for reducing photolithographic steps in a semiconductor interconnect processMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 26, 1999·17 cites·17 claims
- 1561US5726092ASemiconductor processing methods of forming field oxidation regions on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 10, 1998·27 cites·11 claims
- 1660US5837378AMethod of reducing stress-induced defects in siliconMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 17, 1998·25 cites·13 claims
- 1760US5702986ALow-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edgesMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 30, 1997·25 cites·20 claims
- 1859US6917411B1Method for optimizing printing of an alternating phase shift mask having a phase shift errorMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 12, 2005·4 cites·45 claims
- 1959US5416348ACurrent leakage reduction at the storage node diffusion region of a stacked-trench DRAM cell by selectively oxidizing the floor of the trenchMICRON SEMICONDUCTOR INC·Filed 1993·Granted May 16, 1995·16 cites·2 claims
- 2057US5888881AMethod of trench isolation during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1995·Granted Mar 30, 1999·19 cites·26 claims
- 2155US6232191B1Method for forming a spacer for semiconductor manufactureMICRON TECHNOLOGY INC·Filed 1998·Granted May 15, 2001·13 cites·17 claims
- 2255US5798280AProcess for doping hemispherical grain siliconMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 25, 1998·19 cites·17 claims
- 2354US5508215ACurrent leakage reduction at the storage node diffusion region of a stacked-trench dram cell by selectively oxidizing the floor of the trenchMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 16, 1996·11 cites·3 claims
- 2452US6472280B2Method for forming a spacer for semiconductor manufactureMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 29, 2002·2 cites·62 claims
- 2552US5719418AContact-substrate for a semiconductor device comprising a contourMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 17, 1998·12 cites·8 claims
- 2651US5933754ASemiconductor processing method of forming an electrically conductive contact plugMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 3, 1999·13 cites·1 claims
- 2750US6337172B1Method for reducing photolithographic steps in a semiconductor interconnect processFiled 2000·Granted Jan 8, 2002·1 cites·21 claims
- 2850US2006231902A1LOCOS trench isolation structuresGONZALEZ FERNANDO·Filed 2006·Application pending·0 cites
- 2949US6221564B1Method for forming a spacer out of photosensitive materialMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 24, 2001·10 cites·24 claims
- 3048US6069059AWell-drive anneal technique using preplacement of nitride films for enhanced field isolationMICRON TECHNOLOGY INC·Filed 1997·Granted May 30, 2000·12 cites·22 claims
- 3148US5753962ATexturized polycrystalline silicon to aid field oxide formationMICRON TECHNOLOGY INC·Filed 1996·Granted May 19, 1998·12 cites·22 claims
- 3247US5837596AField oxide formation by oxidation of polysilicon layerMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 17, 1998·11 cites·24 claims
- 3346US6090685AMethod of forming a LOCOS trench isolation structureMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 18, 2000·9 cites·48 claims
- 3445US5902128AProcess to improve the flow of oxide during field oxidation by fluorine dopingMICRON TECHNOLOGY INC·Filed 1996·Granted May 11, 1999·8 cites·25 claims
- 3543US6432619B2Method for reducing photolithographic steps in a semiconductor interconnect processMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 13, 2002·0 cites·19 claims
- 3643US5612248AMethod for forming field oxide or other insulators during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1995·Granted Mar 18, 1997·8 cites·20 claims
- 3743US2005012158A1Locos trench isolation structureMICRON TECHNOLOGY INC·Filed 2004·Application pending·0 cites
- 3842US6762475B2Semiconductor wafer isolation structure formed by field oxidationMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 13, 2004·0 cites·15 claims
- 3940US6611038B2Semiconductor wafer isolation structure formed by field oxidationMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 26, 2003·0 cites·12 claims
- 4040US6225174B1Method for forming a spacer using photosensitive materialMICRON TECHNOLOGY INC·Filed 1996·Granted May 1, 2001·5 cites·10 claims
- 4139US6365490B1Process to improve the flow of oxide during field oxidation by fluorine dopingMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 2, 2002·5 cites·27 claims
- 4238US5661073AMethod for forming field oxide having uniform thicknessMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 26, 1997·6 cites·14 claims
- 4337US6809395B1Isolation structure having trench structures formed on both side of a locosMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 26, 2004·4 cites·1 claims
- 4437US6127096AMethod for reducing photolithographic steps in a semiconductor interconnect processMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 3, 2000·3 cites·27 claims
- 4537US5963820AMethod for forming field oxide or other insulators during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 5, 1999·5 cites·12 claims
- 4637US5940692AMethod of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 17, 1999·4 cites·9 claims
- 4737US5891788ALocus isolation technique using high pressure oxidation (hipox) and protective spacersMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 6, 1999·6 cites·17 claims
- 4836US6114218ATexturized polycrystalline silicon to aid field oxide formationMICROM TECHNOLOGY INC·Filed 1998·Granted Sep 5, 2000·7 cites·19 claims
- 4935US6103595AAssisted local oxidation of siliconMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 15, 2000·4 cites·20 claims
- 5035US6077740AMethod for forming a semiconductor device contact structure comprising a contourMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 20, 2000·3 cites·16 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →