Inventor · disambiguated record
Naomi Yoshida
Also filed as: YOSHIDA NAOMI
49 granted patents·10 pending applications·566 citations·filing 1990–2024
98Inventor score
Files withAPPLIED MATERIALS INC48BABCOCK HITACHI KK4VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2AKIZUKI NAOMICHI1FURUKAWA KOUJI1
Top patents by PatentIndex Score
59 records- 0198US9484406B1Method for fabricating nanowires for horizontal gate all around devices for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2015·Granted Nov 1, 2016·79 cites·18 claims
- 0296US10177227B1Method for fabricating junctions and spacers for horizontal gate all around devicesAPPLIED MATERIALS INC·Filed 2017·Granted Jan 8, 2019·40 cites·6 claims
- 0394US9673277B2Methods and apparatus for forming horizontal gate all around device structuresAPPLIED MATERIALS INC·Filed 2015·Granted Jun 6, 2017·13 cites·19 claims
- 0494US9460920B1Horizontal gate all around device isolationAPPLIED MATERIALS INC·Filed 2015·Granted Oct 4, 2016·15 cites·20 claims
- 0594US6488984B1Film deposition method and apparatusAPPLIED MATERIALS INC·Filed 1999·Granted Dec 3, 2002·231 cites·17 claims
- 0690US10777650B2Horizontal gate all around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2017·Granted Sep 15, 2020·5 cites·20 claims
- 0789US9018054B2Metal gate structures for field effect transistors and method of fabricationYOSHIDA NAOMI·Filed 2013·Granted Apr 28, 2015·18 cites·8 claims
- 0888US11245022B2Integrated dipole flow for transistorAPPLIED MATERIALS INC·Filed 2020·Granted Feb 8, 2022·2 cites·7 claims
- 0988US8227352B2Amorphous carbon deposition method for improved stack defectivityYU HANG·Filed 2011·Granted Jul 24, 2012·13 cites·20 claims
- 1087US9865735B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·4 cites·14 claims
- 1186US10727080B2Tantalum-containing material removalAPPLIED MATERIALS INC·Filed 2018·Granted Jul 28, 2020·4 cites·18 claims
- 1286US9748354B2Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereofAPPLIED MATERIALS INC·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 1385US10134585B2Low temperature atomic layer deposition of oxides on compound semiconductorsUNIV CALIFORNIA·Filed 2015·Granted Nov 20, 2018·5 cites·16 claims
- 1485US10109534B2Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)APPLIED MATERIALS INC·Filed 2015·Granted Oct 23, 2018·5 cites·20 claims
- 1583US11145761B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2019·Granted Oct 12, 2021·2 cites·17 claims
- 1677US12046508B2Method of dielectric material fill and treatmentAPPLIED MATERIALS INC·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 1777US10608097B2Low thickness dependent work-function nMOS integration for metal gateAPPLIED MATERIALS INC·Filed 2018·Granted Mar 31, 2020·2 cites·17 claims
- 1876US11894233B2Electronic device having an oxygen free platinum group metal filmAPPLIED MATERIALS INC·Filed 2022·Granted Feb 6, 2024·0 cites·9 claims
- 1976US10573719B2Horizontal gate all around device isolationAPPLIED MATERIALS INC·Filed 2016·Granted Feb 25, 2020·2 cites·19 claims
- 2075US10381465B2Method for fabricating asymmetrical three dimensional deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 13, 2019·2 cites·11 claims
- 2174US11848369B2Horizontal gate-all-around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 2273US11075276B2Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursorsAPPLIED MATERIALS INC·Filed 2019·Granted Jul 27, 2021·1 cites·16 claims
- 2372US10490666B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2017·Granted Nov 26, 2019·1 cites·17 claims
- 2472US2023420232A1Integrated method and tool for high quality selective silicon nitride depositionAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2570US11282936B2Horizontal gate all around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
- 2668US11888045B2Integrated dipole flow for transistorAPPLIED MATERIALS INC·Filed 2021·Granted Jan 30, 2024·0 cites·16 claims
- 2768US7365529B2Test structure design for reliability testAPPLIED MATERIALS INC·Filed 2006·Granted Apr 29, 2008·2 cites·7 claims
- 2867US11615984B2Method of dielectric material fill and treatmentAPPLIED MATERIALS INC·Filed 2020·Granted Mar 28, 2023·0 cites·20 claims
- 2967US10170321B2Aluminum content control of TiAIN filmsAPPLIED MATERIALS INC·Filed 2017·Granted Jan 1, 2019·1 cites·15 claims
- 3066US2025022935A1Source contact for 3d memory with cmos bonded arrayAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3165US9748364B2Method for fabricating three dimensional deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 29, 2017·1 cites·18 claims
- 3265US5953630ASuppression of tungsten film deposition on a semiconductor wafer bevel edge with a halogenide purge gasAPPLIED MATERIALS INC·Filed 1997·Granted Sep 14, 1999·32 cites·14 claims
- 3363US12062545B2Fluorine-free tungsten ALD for dielectric selectivity improvementAPPLIED MATERIALS INC·Filed 2021·Granted Aug 13, 2024·0 cites·13 claims
- 3462US2025183036A1Selective silicon nitride with treatment for contact formation in logic or memory devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3561US2024365551A13d nand cells with enhanced erase speed through dipole engineering and methods of making the sameAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3661US2025240994A1Selective silicon nitride with treatment for backside power delivery networkAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3760US5155083ACatalyst for reducing nitrogen oxides and process for making the catalystBABCOCK HITACHI KK·Filed 1990·Granted Oct 13, 1992·23 cites·9 claims
- 3859US11488830B2Oxygen free deposition of platinum group metal filmsAPPLIED MATERIALS INC·Filed 2019·Granted Nov 1, 2022·0 cites·14 claims
- 3959US2021384035A1Fluorine-Free Tungsten ALD And Tungsten Selective CVD For DielectricsAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 4059US2024249934A1Integrated method and tool for high quality selective silicon nitride depositionAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4158US2025006474A1Interconnect capping with integrated process stepsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4257US10553425B2Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALDAPPLIED MATERIALS INC·Filed 2017·Granted Feb 4, 2020·0 cites·20 claims
- 4355US5059576ACatalyst for removing nitrogen oxides and a process for producing the sameBABCOCK HITACHI KK·Filed 1990·Granted Oct 22, 1991·16 cites·10 claims
- 4454US11830725B2Method of cleaning a structure and method of depositing a capping layer in a structureAPPLIED MATERIALS INC·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 4554US9773663B2Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALDAPPLIED MATERIALS INC·Filed 2016·Granted Sep 26, 2017·0 cites·20 claims
- 4654US7324137B2System for automatically generating continuous developed still image from video image of inner wall of tubular objectAKIZUKI NAOMICHI·Filed 2004·Granted Jan 29, 2008·7 cites·8 claims
- 4753US5294584AProcess for producing a denitration catalystBABCOCK HITACHI KK·Filed 1991·Granted Mar 15, 1994·15 cites·3 claims
- 4851US8349741B2Amorphous carbon deposition method for improved stack defectivityAPPLIED MATERIALS INC·Filed 2012·Granted Jan 8, 2013·0 cites·19 claims
- 4950US10665450B2Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum filmsAPPLIED MATERIALS INC·Filed 2018·Granted May 26, 2020·0 cites·20 claims
- 5050US9355820B2Methods for removing carbon containing filmsAPPLIED MATERIALS INC·Filed 2014·Granted May 31, 2016·0 cites·20 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →