Inventor · disambiguated record
Neng-Kuo Chen
Also filed as: CHEN NENG · CHEN NENG C · CHEN NENG-KUO
79 granted patents·25 pending applications·2,181 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30UNITED MICROELECTRONICS CORP24CHEN NENG-KUO18TAIWAN SEMICONDUCTOR MFG13HUANG GIN-CHEN3
Top patents by PatentIndex Score
104 records- 0198US9443769B2Wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·534 cites·15 claims
- 0298US9093530B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·1.3k cites·20 claims
- 0397US7655532B1STI film property using SOD post-treatmentTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Feb 2, 2010·54 cites·13 claims
- 0496US9214556B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·23 cites·20 claims
- 0596US8319311B2Hybrid STI gap-filling approachCHEN NENG-KUO·Filed 2010·Granted Nov 27, 2012·33 cites·32 claims
- 0695US8367534B2Non-uniformity reduction in semiconductor planarizationTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·16 cites·20 claims
- 0793US8048813B2Method of reducing delamination in the fabrication of small-pitch devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·20 cites·19 claims
- 0892US10269649B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
- 0990US10651091B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·3 cites·20 claims
- 1090US9941367B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
- 1189US9994736B2Slurry composition for chemical mechanical polishing of GE-based materials and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·4 cites·20 claims
- 1288US9530655B2Slurry composition for chemical mechanical polishing of Ge-based materials and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 27, 2016·6 cites·20 claims
- 1388US9245792B2Method for forming interconnect structuresCHEN NENG-KUO·Filed 2008·Granted Jan 26, 2016·14 cites·21 claims
- 1488US9105661B2Fin field effect transistor gate oxideHUANG GIN-CHEN·Filed 2011·Granted Aug 11, 2015·12 cites·9 claims
- 1588US8921136B2Self aligned contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 30, 2014·7 cites·20 claims
- 1687US10212339B2Image generation method based on dual camera module and dual camera apparatusYULONG COMPUTER TELECOMMUNICATION SCIENTIFIC SHENZHEN CO LTD·Filed 2016·Granted Feb 19, 2019·6 cites·12 claims
- 1786US9416297B2Chemical mechanical polishing method using slurry composition containing N-oxide compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·7 cites·20 claims
- 1886US8778807B2Method of reducing delamination in the fabrication of small-pitch devicesLAI CHIH-YU·Filed 2011·Granted Jul 15, 2014·7 cites·23 claims
- 1986US7238586B2Seamless trench fill method utilizing sub-atmospheric pressure chemical vapor deposition techniqueUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jul 3, 2007·16 cites·5 claims
- 2085US9870956B2FinFETs with nitride liners and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·4 cites·19 claims
- 2184US9589803B2Gate electrode of field effect transistorCHEN NENG-KUO·Filed 2012·Granted Mar 7, 2017·4 cites·20 claims
- 2282US9812551B2Method of forming the gate electrode of field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·2 cites·20 claims
- 2382US9263252B2Method of protecting an interlayer dielectric layer and structure formed therebyCHANG CHUN-WEI·Filed 2013·Granted Feb 16, 2016·5 cites·20 claims
- 2482US7485515B2Method of manufacturing metal oxide semiconductorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 3, 2009·8 cites·12 claims
- 2580US11784183B2Inter-level connection for multi-layer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 2679US8187948B2Hybrid gap-fill approach for STI formationCHEN NENG-KUO·Filed 2008·Granted May 29, 2012·7 cites·19 claims
- 2779US7777284B2Metal-oxide-semiconductor transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2007·Granted Aug 17, 2010·6 cites·13 claims
- 2878US10333001B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·1 cites·20 claims
- 2978US9034716B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 19, 2015·3 cites·10 claims
- 3076US11854898B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3176US7662730B2Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereofUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 16, 2010·4 cites·12 claims
- 3275US9929272B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 27, 2018·1 cites·20 claims
- 3375US9006802B2Semiconductor device manufacturing methods and methods of forming insulating material layersHUANG GIN-CHEN·Filed 2011·Granted Apr 14, 2015·3 cites·20 claims
- 3475US8546242B2Hybrid gap-fill approach for STI formationCHEN NENG-KUO·Filed 2012·Granted Oct 1, 2013·3 cites·15 claims
- 3574US11362000B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 3674US8524587B2Non-uniformity reduction in semiconductor planarizationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 3, 2013·2 cites·20 claims
- 3773US11532612B2Inter-level connection for multi-layer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 3873US7892929B2Shallow trench isolation corner roundingTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Feb 22, 2011·5 cites·20 claims
- 3972US9443964B2Fin structure of FinFetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·1 cites·20 claims
- 4072US9337103B2Method for removing hard mask oxide and making gate structure of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted May 10, 2016·3 cites·20 claims
- 4172US7588883B2Method for forming a gate and etching a conductive layerUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 15, 2009·4 cites·17 claims
- 4271US7494878B2Metal-oxide-semiconductor transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 24, 2009·4 cites·14 claims
- 4370US7566668B2Method of forming contactUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jul 28, 2009·3 cites·12 claims
- 4469US9881803B2Chemical mechanical polishing method using slurry composition containing N-oxide compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·1 cites·20 claims
- 4568US10797156B2Method of forming the gate electrode of field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·0 cites·20 claims
- 4668US9368446B2Self aligned contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 14, 2016·1 cites·20 claims
- 4768US7642166B2Method of forming metal-oxide-semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jan 5, 2010·3 cites·20 claims
- 4867US9159808B2Selective etch-back process for semiconductor devicesCHEN NENG-KUO·Filed 2009·Granted Oct 13, 2015·2 cites·20 claims
- 4966US7541298B2STI of a semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jun 2, 2009·2 cites·21 claims
- 5065US8940597B2In-situ metal gate recess process for self-aligned contact applicationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·1 cites·20 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →