Inventor · disambiguated record
Nerissa Draeger
Also filed as: DRAEGER NERISSA · DRAEGER NERISSA S · DRAEGER NERISSA SUE
25 granted patents·6 pending applications·1,886 citations·filing 2003–2020
97Inventor score
Top patents by PatentIndex Score
31 records- 0198US8187951B1CVD flowable gap fillWANG FENG·Filed 2009·Granted May 29, 2012·550 cites·12 claims
- 0298US7629227B1CVD flowable gap fillNOVELLUS SYSTEMS INC·Filed 2007·Granted Dec 8, 2009·78 cites·23 claims
- 0397US7510982B1Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticlesNOVELLUS SYSTEMS INC·Filed 2005·Granted Mar 31, 2009·51 cites·13 claims
- 0497US7166531B1VLSI fabrication processes for introducing pores into dielectric materialsNOVELLUS SYSTEMS INC·Filed 2005·Granted Jan 23, 2007·160 cites·36 claims
- 0596US8685867B1Premetal dielectric integration processDANEK MICHAL·Filed 2011·Granted Apr 1, 2014·55 cites·26 claims
- 0696US8278224B1Flowable oxide deposition using rapid delivery of process gasesMUI COLLIN K L·Filed 2009·Granted Oct 2, 2012·396 cites·21 claims
- 0795US8058179B1Atomic layer removal process with higher etch amountDRAEGER NERISSA·Filed 2008·Granted Nov 15, 2011·286 cites·17 claims
- 0894US8846536B2Flowable oxide film with tunable wet etch rateDRAEGER NERISSA·Filed 2012·Granted Sep 30, 2014·42 cites·22 claims
- 0994US8728958B2Gap fill integrationASHTIANI KAIHAN·Filed 2010·Granted May 20, 2014·26 cites·23 claims
- 1094US7107998B2Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatusNOVELLUS SYSTEMS INC·Filed 2003·Granted Sep 19, 2006·74 cites·27 claims
- 1193US9257302B1CVD flowable gap fillWANG FENG·Filed 2012·Granted Feb 9, 2016·16 cites·17 claims
- 1293US9064684B1Flowable oxide deposition using rapid delivery of process gasesMUI COLLIN K L·Filed 2012·Granted Jun 23, 2015·18 cites·19 claims
- 1392US10049921B2Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursorLAM RES CORP·Filed 2014·Granted Aug 14, 2018·15 cites·19 claims
- 1492US9847222B2Treatment for flowable dielectric deposition on substrate surfacesLAM RES CORP·Filed 2014·Granted Dec 19, 2017·15 cites·21 claims
- 1591US9245739B2Low-K oxide deposition by hydrolysis and condensationLAM RES CORP·Filed 2014·Granted Jan 26, 2016·14 cites·20 claims
- 1690US9299559B2Flowable oxide film with tunable wet etch rateNOVELLUS SYSTEMS INC·Filed 2014·Granted Mar 29, 2016·10 cites·14 claims
- 1789US8062983B1Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticlesDRAEGER NERISSA S·Filed 2009·Granted Nov 22, 2011·17 cites·17 claims
- 1887US8278216B1Selective capping of copperALERS GLENN·Filed 2006·Granted Oct 2, 2012·31 cites·16 claims
- 1985US7629224B1VLSI fabrication processes for introducing pores into dielectric materialsNOVELLUS SYSTEMS INC·Filed 2006·Granted Dec 8, 2009·19 cites·13 claims
- 2084US9627608B2Dielectric repair for emerging memory devicesLAM RES CORP·Filed 2014·Granted Apr 18, 2017·2 cites·22 claims
- 2179US11520953B2Predicting etch characteristics in thermal etching and atomic layer etchingLAM RES CORP·Filed 2018·Granted Dec 6, 2022·3 cites·27 claims
- 2269US7972976B1VLSI fabrication processes for introducing pores into dielectric materialsNOVELLUS SYSTEMS INC·Filed 2009·Granted Jul 5, 2011·7 cites·15 claims
- 2362US9988715B2Interface engineering during MGO deposition for magnetic tunnel junctionsLAM RES CORP·Filed 2015·Granted Jun 5, 2018·1 cites·9 claims
- 2453US2014302689A1Methods and apparatus for dielectric depositionNOVELLUS SYSTEMS INC·Filed 2014·Application pending·0 cites
- 2553US2022413276A1Reflective fourier ptychography imaging of large surfacesLAM RES CORP·Filed 2020·Application pending·0 cites
- 2652US2015118848A1Atomic layer removal process with higher etch amountNOVELLUS SYSTEM INC·Filed 2014·Application pending·0 cites
- 2749US10354887B2Atomic layer etching of metal oxideLAM RES CORP·Filed 2017·Granted Jul 16, 2019·0 cites·10 claims
- 2844US2016042945A1Coverage of high aspect ratio features using spin-on dielectric through a wetted surface without a prior drying stepLAM RES CORP·Filed 2014·Application pending·0 cites
- 2943US2015118863A1Methods and apparatus for forming flowable dielectric films having low porosityLAM RES CORP·Filed 2014·Application pending·0 cites
- 3036US10847375B2Selective atomic layer etchingLAM RES CORP·Filed 2018·Granted Nov 24, 2020·0 cites·10 claims
- 3134US2012149213A1Bottom up fill in high aspect ratio trenchesNITTALA LAKSHMINARAYANA·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →