Inventor · disambiguated record
Norihiro Kobayashi
Also filed as: KOBAYASHI NORIHIRO
58 granted patents·9 pending applications·610 citations·filing 1995–2017
98Inventor score
Top patents by PatentIndex Score
67 records- 0188US6191009B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Feb 20, 2001·57 cites·19 claims
- 0287US7890620B2Monitoring system and monitoring methodHITACHI LTD·Filed 2005·Granted Feb 15, 2011·20 cites·17 claims
- 0385US6461939B1SOI wafers and methods for producing SOI waferSHINETSU HANDOTAI KK·Filed 2000·Granted Oct 8, 2002·42 cites·17 claims
- 0482US7861421B2Method for measuring rotation angle of bonded waferSHINETSU HANDOTAI KK·Filed 2008·Granted Jan 4, 2011·8 cites·8 claims
- 0582US6391796B1Method for heat-treating silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 1999·Granted May 21, 2002·61 cites·8 claims
- 0679US7147711B2Method of producing silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 2001·Granted Dec 12, 2006·22 cites·16 claims
- 0779US6362076B1Method of fabricating an SOI wafer by hydrogen ion delamination without independent bonding heat treatmentSHINETSU HANDOTAI KK·Filed 1999·Granted Mar 26, 2002·54 cites·5 claims
- 0875US9793154B2Method for manufacturing bonded SOI waferSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 17, 2017·2 cites·8 claims
- 0975US8823130B2Silicon epitaxial wafer, method for manufacturing the same, bonded SOI wafer and method for manufacturing the sameKATO MASAHIRO·Filed 2011·Granted Sep 2, 2014·4 cites·8 claims
- 1075US6413310B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jul 2, 2002·45 cites·24 claims
- 1174US6139625AMethod for producing a silicon single crystal wafer and a silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Oct 31, 2000·27 cites·12 claims
- 1272US6573159B1Method for thermally annealing silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 3, 2003·29 cites·8 claims
- 1370US9735045B2Method of fabricating SOI wafer by ion implantationSHINETSU HANDOTAI KK·Filed 2014·Granted Aug 15, 2017·2 cites·7 claims
- 1470US6245311B1Method for heat treatment of silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 12, 2001·38 cites·19 claims
- 1569US6809015B2Method for heat treatment of silicon wafers and silicon waferSHINETSU HANDOTAI KK·Filed 2003·Granted Oct 26, 2004·9 cites·1 claims
- 1665US8173521B2Method for manufacturing bonded waferKOBAYASHI NORIHIRO·Filed 2008·Granted May 8, 2012·3 cites·16 claims
- 1764US8097523B2Method for manufacturing bonded waferKOBAYASHI NORIHIRO·Filed 2009·Granted Jan 17, 2012·3 cites·6 claims
- 1864US7902042B2Method of manufacturing SOI wafer and thus-manufactured SOI waferSHINETSU HANDOTAI KK·Filed 2005·Granted Mar 8, 2011·2 cites·15 claims
- 1963US9076840B2Method for manufacturing a bonded SOI waferSHINETSU HANDOTAI KK·Filed 2012·Granted Jul 7, 2015·1 cites·4 claims
- 2061US7081422B2Manufacturing process for annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 25, 2006·8 cites·14 claims
- 2160US10529615B2Method for manufacturing a bonded SOI wafer and bonded SOI waferSHINETSU HANDOTAI KK·Filed 2015·Granted Jan 7, 2020·1 cites·3 claims
- 2260US7189293B2Method of producing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2002·Granted Mar 13, 2007·7 cites·23 claims
- 2359US6548907B1Semiconductor device having a matrix array of contacts and a fabrication process thereofFUJITSU LTD·Filed 1999·Granted Apr 15, 2003·20 cites·17 claims
- 2456US7153785B2Method of producing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2002·Granted Dec 26, 2006·5 cites·9 claims
- 2555US6238990B1Method for heat treatment of SOI wafer and SOI wafer heat-treated by the methodSHINETSU HANDOTAI KK·Filed 1998·Granted May 29, 2001·19 cites·4 claims
- 2654US6805743B2Method for manufacturing single-crystal-silicon wafersSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 19, 2004·4 cites·16 claims
- 2754US5998283ASilicon wafer having plasma CVD gettering layer with components/composition changing in depth-wise direction and method of manufacturing the silicon waferSHINETSU HANDOTAI KK·Filed 1997·Granted Dec 7, 1999·19 cites·20 claims
- 2852US7011717B2Method for heat treatment of silicon wafers and silicon waferSHINETSU HANDOTAI KK·Filed 2004·Granted Mar 14, 2006·2 cites·2 claims
- 2952US6878645B2Method for manufacturing silicon waferSHINETSU HANDOTAI KK·Filed 2001·Granted Apr 12, 2005·3 cites·6 claims
- 3052US6841450B2Annealed wafer manufacturing method and annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Jan 11, 2005·3 cites·24 claims
- 3151US7721295B2Execution multiplicity control system, and method and program for controlling the sameHITACHI LTD·Filed 2005·Granted May 18, 2010·0 cites·18 claims
- 3250US5863659ASilicon wafer, and method of manufacturing the sameSHINETSU HANDOTAI KK·Filed 1997·Granted Jan 26, 1999·20 cites·8 claims
- 3348US9679800B2Method for manufacturing bonded waferSHINETSU HANDOTAI KK·Filed 2014·Granted Jun 13, 2017·0 cites·10 claims
- 3448US8466538B2SOI wafer, semiconductor device, and method for manufacturing SOI waferISHIZUKA TOHRU·Filed 2009·Granted Jun 18, 2013·0 cites·5 claims
- 3548US6531416B1Method for heat treatment of silicon wafer and silicon wafer heat-treated by the methodSHINETSU HANDOTAI KK·Filed 1998·Granted Mar 11, 2003·15 cites·2 claims
- 3648US5759426AHeat treatment jig for semiconductor wafers and a method for treating a surface of the sameSHINETSU HANDOTAI KK·Filed 1995·Granted Jun 2, 1998·11 cites·2 claims
- 3747US9859149B2Method of producing bonded wafer with uniform thickness distributionSHINETSU HANDOTAI KK·Filed 2014·Granted Jan 2, 2018·0 cites·4 claims
- 3847US8202787B2Method for manufacturing SOI waferISHIZUKA TOHRU·Filed 2009·Granted Jun 19, 2012·0 cites·16 claims
- 3947US6806199B2Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnaceSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 19, 2004·1 cites·16 claims
- 4047US6670261B2Production method for annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Dec 30, 2003·1 cites·2 claims
- 4147US6544899B2Process for manufacturing silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2001·Granted Apr 8, 2003·1 cites·2 claims
- 4247US2011151643A1Method for manufacturing bonded waferSHINETSU HANDOTAI KK·Filed 2009·Application pending·0 cites
- 4346US2017220275A1Computer system and management programHITACHI LTD·Filed 2014·Application pending·0 cites
- 4445US8697544B2Method for manufacturing bonded waferISHIZUKA TOHRU·Filed 2009·Granted Apr 15, 2014·0 cites·1 claims
- 4545US6844209B2Semiconductor device having a matrix array of contacts and a fabrication process thereofFUJITSU LTD·Filed 2002·Granted Jan 18, 2005·1 cites·2 claims
- 4644US9240344B2Method for manufacturing SOI waferSHINETSU HANDOTAI KK·Filed 2012·Granted Jan 19, 2016·0 cites·20 claims
- 4744US9093497B2Method for manufacturing bonded SOI waferSHINETSU HANDOTAI KK·Filed 2012·Granted Jul 28, 2015·0 cites·16 claims
- 4844US6204188B1Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the methodSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 20, 2001·10 cites·24 claims
- 4944US2003033410A1Machine resource management system, method and programFiled 2002·Application pending·0 cites
- 5044US2007072234A1Protein capable of binding plasticizerJAPAN ENVIRO CHEMICALS LTD·Filed 2004·Application pending·0 cites
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →