Inventor · disambiguated record
Nobuyuki Mise
Also filed as: MISE NOBUYUKI
18 granted patents·7 pending applications·726 citations·filing 1992–2021
94Inventor score
Top patents by PatentIndex Score
25 records- 0198US5242539APlasma treatment method and apparatusHITACHI LTD·Filed 1992·Granted Sep 7, 1993·602 cites·76 claims
- 0286US6759253B2Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring unitsHITACHI LTD·Filed 2001·Granted Jul 6, 2004·27 cites·33 claims
- 0385US8404603B2Method of manufacturing semiconductor device and substrate processing systemOGAWA ARITO·Filed 2010·Granted Mar 26, 2013·8 cites·20 claims
- 0481US8698249B2CMOS semiconductor device and method for manufacturing the sameMISE NOBUYUKI·Filed 2012·Granted Apr 15, 2014·7 cites·5 claims
- 0581US7645655B2Semiconductor device and manufacturing method of the semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted Jan 12, 2010·7 cites·6 claims
- 0678US7968396B2Semiconductor device and manufacturing method of the semiconductor deviceSEIKO EPSON CORP·Filed 2009·Granted Jun 28, 2011·5 cites·2 claims
- 0773US7671426B2Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant filmRENESAS TECH CORP·Filed 2009·Granted Mar 2, 2010·4 cites·8 claims
- 0871US7863127B2Manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Jan 4, 2011·5 cites·22 claims
- 0969US6462411B1Semiconductor wafer processing apparatus for transferring a wafer mountKOKUSAI ELECTRIC CO LTD·Filed 1998·Granted Oct 8, 2002·40 cites·28 claims
- 1065US7947560B2Method of nickel disilicide formation and method of nickel disilicate source/drain formationSEIKO EPSON CORP·Filed 2007·Granted May 24, 2011·2 cites·8 claims
- 1164US11417892B2Fuel cellHITACHI HIGH TECH CORP·Filed 2018·Granted Aug 16, 2022·0 cites·15 claims
- 1263US7507632B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2007·Granted Mar 24, 2009·2 cites·10 claims
- 1363US6967109B2Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring unitsHITACHI LTD·Filed 2004·Granted Nov 22, 2005·6 cites·6 claims
- 1462US2024120520A1Fuel battery cell and manufacturing method thereforHITACHI HIGH TECH CORP·Filed 2021·Application pending·0 cites
- 1558US2023127271A1Fuel Cell and Method for Producing SameHITACHI HIGH TECH CORP·Filed 2020·Application pending·0 cites
- 1657US6835665B2Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the methodHITACHI HIGH TECH CORP·Filed 2002·Granted Dec 28, 2004·5 cites·21 claims
- 1756US11855318B2Fuel battery cell, fuel battery system, leak detection methodHITACHI HIGH TECH CORP·Filed 2019·Granted Dec 26, 2023·0 cites·13 claims
- 1856US8288221B2Method of manufacturing semiconductor device and semiconductor deviceEIMORI TAKAHISA·Filed 2009·Granted Oct 16, 2012·1 cites·6 claims
- 1949US2006000800A1Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring unitsUSUI TATEHITO·Filed 2005·Application pending·0 cites
- 2045US2010258878A1Cmos semiconductor device and method for manufacturing the sameMISE NOBUYUKI·Filed 2008·Application pending·0 cites
- 2140US2008067590A1Semiconductor device and manufacturing method of the sameNAT INST OF ADVANCED IND SCIEN·Filed 2007·Application pending·0 cites
- 2239US2004092044A1Ion current density measuring method and instrument, and semiconductor device manufacturing methodFiled 2003·Application pending·0 cites
- 2338US8466053B2Method of manufacturing semiconductor device, and semiconductor deviceMATSUKI TAKEO·Filed 2011·Granted Jun 18, 2013·0 cites·8 claims
- 2438US2006281273A1Semiconductor device and manufacturing method of the semiconductor deviceRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 2536US6656752B1Ion current density measuring method and instrument, and semiconductor device manufacturing methodHITACHI LTD·Filed 1999·Granted Dec 2, 2003·5 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →