Inventor · disambiguated record
Paul A. Clifton
Also filed as: CLIFTON PAUL · CLIFTON PAUL A
58 granted patents·13 pending applications·366 citations·filing 2003–2025
98Inventor score
Top patents by PatentIndex Score
71 records- 0198US9620611B1MIS contact structure with metal oxide conductorACORN TECH INC·Filed 2016·Granted Apr 11, 2017·16 cites·19 claims
- 0297US11728624B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2022·Granted Aug 15, 2023·2 cites·50 claims
- 0397US11462643B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2020·Granted Oct 4, 2022·3 cites·21 claims
- 0497US9270083B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2015·Granted Feb 23, 2016·10 cites·30 claims
- 0596US9036672B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2014·Granted May 19, 2015·12 cites·20 claims
- 0696US8731017B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemCLIFTON PAUL A·Filed 2011·Granted May 20, 2014·26 cites·27 claims
- 0796US7700416B1Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layerACORN TECH INC·Filed 2008·Granted Apr 20, 2010·53 cites·36 claims
- 0896US7338834B2Strained silicon with elastic edge relaxationACORN TECH INC·Filed 2006·Granted Mar 4, 2008·38 cites·26 claims
- 0995US10833199B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2019·Granted Nov 10, 2020·7 cites·34 claims
- 1095US10170627B2Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier heightACORN TECH INC·Filed 2017·Granted Jan 1, 2019·9 cites·26 claims
- 1195US9362376B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN TECH INC·Filed 2012·Granted Jun 7, 2016·13 cites·26 claims
- 1294US7851325B1Strained semiconductor using elastic edge relaxation, a buried stressor layer and a sacrificial stressor layerACORN TECH INC·Filed 2008·Granted Dec 14, 2010·23 cites·19 claims
- 1393US10193307B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2017·Granted Jan 29, 2019·4 cites·21 claims
- 1493US8263467B2Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistorGRUPP DANIEL E·Filed 2011·Granted Sep 11, 2012·18 cites·37 claims
- 1593US2025366078A1Relating to soi wafers and devices with buried stressorsACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 1692US10505047B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN TECH INC·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 1791US10147798B2MIS contact structure with metal oxide conductorACORN TECH INC·Filed 2017·Granted Dec 4, 2018·4 cites·20 claims
- 1889US12477776B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2024·Granted Nov 18, 2025·0 cites·38 claims
- 1989US8658523B2Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)FAULKNER CARL M·Filed 2010·Granted Feb 25, 2014·16 cites·4 claims
- 2088US8395213B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerCLIFTON PAUL A·Filed 2010·Granted Mar 12, 2013·12 cites·46 claims
- 2188US7816240B2Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)ACORN TECH INC·Filed 2007·Granted Oct 19, 2010·14 cites·2 claims
- 2288US2025275218A1Metal contacts to group iv semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 2387US12336263B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2023·Granted Jun 17, 2025·0 cites·14 claims
- 2487US7972916B1Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recessesACORN TECH INC·Filed 2008·Granted Jul 5, 2011·14 cites·26 claims
- 2587US2023344200A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2023·Application pending·0 cites
- 2686US12402365B2SOI wafers and devices with buried stressorsACORN SEMI LLC·Filed 2023·Granted Aug 26, 2025·0 cites·29 claims
- 2786US10833194B2SOI wafers and devices with buried stressorACORN TECH INC·Filed 2019·Granted Nov 10, 2020·2 cites·5 claims
- 2885US11843040B2MIS contact structure with metal oxide conductorACORN SEMI LLC·Filed 2020·Granted Dec 12, 2023·1 cites·18 claims
- 2985US11804533B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2023·Granted Oct 31, 2023·0 cites·8 claims
- 3085US8212336B2Field effect transistor source or drain with a multi-facet surfaceGOEBEL ANDREAS·Filed 2009·Granted Jul 3, 2012·21 cites·32 claims
- 3184US2024072150A1Mis contact structure with metal oxide conductorACORN SEMI LLC·Filed 2023·Application pending·0 cites
- 3283US11978800B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2022·Granted May 7, 2024·0 cites·14 claims
- 3383US7902029B2Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistorACORN TECH INC·Filed 2005·Granted Mar 8, 2011·10 cites·20 claims
- 3482US10872964B2MIS contact structure with metal oxide conductorACORN SEMI LLC·Filed 2020·Granted Dec 22, 2020·1 cites·30 claims
- 3581US12034078B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2022·Granted Jul 9, 2024·0 cites·8 claims
- 3680US11791411B2Relating to SOI wafers and devices with buried stressorsACORN SEMI LLC·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 3780US8003486B2Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layerACORN TECH INC·Filed 2010·Granted Aug 23, 2011·4 cites·13 claims
- 3879US2025158362A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 3979US2025167523A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 4078US9406798B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerCLIFTON PAUL A·Filed 2013·Granted Aug 2, 2016·2 cites·16 claims
- 4178US8361868B2Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantationACORN TECH INC·Filed 2010·Granted Jan 29, 2013·5 cites·9 claims
- 4277US11610974B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 4377US11476364B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2021·Granted Oct 18, 2022·0 cites·28 claims
- 4477US10727647B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2018·Granted Jul 28, 2020·0 cites·15 claims
- 4576US11271370B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2020·Granted Mar 8, 2022·0 cites·21 claims
- 4676US7977147B2Strained silicon with elastic edge relaxationACOM TECHNOLOGIES INC·Filed 2009·Granted Jul 12, 2011·5 cites·41 claims
- 4775US11322615B2SOI wafers and devices with buried stressorACORN SEMI LLC·Filed 2020·Granted May 3, 2022·0 cites·20 claims
- 4874US9029686B2Strain-enhanced silicon photon-to-electron conversion devicesACORN TECH INC·Filed 2013·Granted May 12, 2015·1 cites·12 claims
- 4974US8361867B2Biaxial strained field effect transistor devicesACORN TECH INC·Filed 2010·Granted Jan 29, 2013·3 cites·15 claims
- 5074US7612365B2Strained silicon with elastic edge relaxationACORN TECH INC·Filed 2008·Granted Nov 3, 2009·3 cites·25 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →