Inventor · disambiguated record
Peide Ye
Also filed as: YE PEIDE · YE PEIDE D
9 granted patents·4 pending applications·156 citations·filing 2002–2021
87Inventor score
Files withAGERE SYSTEMS INC4PURDUE RESEARCH FOUNDATION2TAIWAN SEMICONDUCTOR MFG CO LTD2UNIV NORTHWESTERN2MARKS TOBIN J1
Top patents by PatentIndex Score
13 records- 0194US6770536B2Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrateAGERE SYSTEMS INC·Filed 2002·Granted Aug 3, 2004·77 cites·10 claims
- 0292US7910932B2Transparent nanowire transistors and methods for fabricating sameUNIV NORTHWESTERN·Filed 2008·Granted Mar 22, 2011·30 cites·27 claims
- 0391US8329541B2InP-based transistor fabricationYE PEIDE·Filed 2008·Granted Dec 11, 2012·34 cites·16 claims
- 0474US10000384B2Method of laser direct synthesis of graphenePURDUE RESEARCH FOUNDATION·Filed 2013·Granted Jun 19, 2018·1 cites·12 claims
- 0573US9780190B2InP-based transistor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 3, 2017·2 cites·20 claims
- 0667US7633130B2High-performance field effect transistors with self-assembled nanodielectricsUNIV NORTHWESTERN·Filed 2007·Granted Dec 15, 2009·2 cites·25 claims
- 0764US7180103B2III-V power field effect transistorsAGERE SYSTEMS INC·Filed 2004·Granted Feb 20, 2007·10 cites·23 claims
- 0857US10541315B2INP-based transistor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 21, 2020·0 cites·20 claims
- 0950US2023178441A1Atomic layer deposited (ald) oxide semiconductors for integrated circuits (ics)PURDUE RESEARCH FOUNDATION·Filed 2021·Application pending·0 cites
- 1048US7537984B2III-V power field effect transistorsAGERE SYSTEMS INC·Filed 2006·Granted May 26, 2009·0 cites·2 claims
- 1143US2004241947A1Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrateAGERE SYSTEMS INC·Filed 2004·Application pending·0 cites
- 1241US2011253970A1Transparent nanowire transistors and methods for fabricating sameMARKS TOBIN J·Filed 2011·Application pending·0 cites
- 1338US2008048216A1Apparatus and method of forming metal oxide semiconductor field-effect transistor with atomic layer deposited gate dielectricYE PEIDE D·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →