Inventor · disambiguated record
Pengyuan Zheng
Also filed as: ZHENG PENGYUAN
15 granted patents·8 pending applications·5 citations·filing 2018–2025
86Inventor score
Top patents by PatentIndex Score
23 records- 0186US2025374548A1Metal gate stacks for cmos scalingMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0283US12431407B2Memory device with low density thermal barrierMICRON TECHNOLOGY INC·Filed 2024·Granted Sep 30, 2025·0 cites·18 claims
- 0377US11659778B2Composite electrode material chemistryMICRON TECHNOLOGY INC·Filed 2020·Granted May 23, 2023·1 cites·7 claims
- 0475US11349068B2Memory cellsINTEL CORP·Filed 2019·Granted May 31, 2022·2 cites·18 claims
- 0574US12402318B2Metal gate stacks for CMOS scalingMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 0674US11158561B2Memory device with low density thermal barrierMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 26, 2021·1 cites·11 claims
- 0771US11778837B2Memory with optimized resistive layersMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 0870US11984382B2Memory device with low density thermal barrierMICRON TECHNOLOGY INC·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 0970US10825987B2Fabrication of electrodes for memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 3, 2020·1 cites·9 claims
- 1068US12499944B2Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 16, 2025·0 cites·34 claims
- 1166US11721606B2Memory device with high resistivity thermal barrierMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1263US11380732B2Memory with optimized resistive layersMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 1362US11545623B2Fabrication of electrodes for memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 3, 2023·0 cites·16 claims
- 1460US2025318113A1Microelectronic devices and related methods and memory devicesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1558US10964621B2Memory device with high resistivity thermal barrierMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·0 cites·11 claims
- 1658US2025120870A1Method and device for converting current and moment and rehabilitation robotZHENGZHOU ANGELEXO INTELLIGENT TECH CO LTD·Filed 2022·Application pending·0 cites
- 1758US2024355391A1Memory Circuitry Comprising Strings Of Memory Cells And Method Used In Forming Memory Circuitry Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1857US11631811B2WSiGe electrode structures for memory devices, and associated devices and systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 18, 2023·0 cites·22 claims
- 1957US2024071819A1Stress mitigation for three-dimensional metal contactsMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2052US2023397423A1Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systemsMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2148US11011378B2Atom implantation for reduction of compressive stressMICRON TECHNOLOGY INC·Filed 2019·Granted May 18, 2021·0 cites·8 claims
- 2247US2023389314A1Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Cells, Methods Used In Forming Integrated Circuitry, And Methods Used In Forming A Memory Array Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2337US2021050512A1Phase change memory structures and devicesINTEL CORP·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →