Inventor · disambiguated record
Po-Chih Su
Also filed as: SU PO-CHIH
43 granted patents·9 pending applications·154 citations·filing 2012–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37NG CHUN-WAI8TAIWAN SEMICONDUCTOR MFG4SU PO-CHIH2CHOU HSUEH-LIANG1
Top patents by PatentIndex Score
52 records- 0196US9590053B2Methodology and structure for field plate designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·27 cites·20 claims
- 0296US9293376B2Apparatus and method for power MOS transistorSU PO-CHIH·Filed 2012·Granted Mar 22, 2016·43 cites·17 claims
- 0395US9171931B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 27, 2015·12 cites·21 claims
- 0493US10636904B2Methodology and structure for field plate designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·7 cites·20 claims
- 0593US8669611B2Apparatus and method for power MOS transistorNG CHUN-WAI·Filed 2012·Granted Mar 11, 2014·11 cites·15 claims
- 0692US9954097B2Methodology and structure for field plate designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 24, 2018·8 cites·20 claims
- 0788US8890240B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 18, 2014·5 cites·20 claims
- 0888US8823096B2Vertical power MOSFET and methods for forming the sameSU PO-CHIH·Filed 2012·Granted Sep 2, 2014·7 cites·17 claims
- 0987US10170589B2Vertical power MOSFET and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·3 cites·18 claims
- 1087US9412844B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·3 cites·20 claims
- 1186US9653459B2MOSFET having source region formed in a double wells regionCHOU HSUEH-LIANG·Filed 2012·Granted May 16, 2017·7 cites·18 claims
- 1285US9698227B2FinFET with trench field plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·5 cites·20 claims
- 1384US10164085B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 1481US8896060B2Trench power MOSFETNG CHUN-WAI·Filed 2012·Granted Nov 25, 2014·3 cites·19 claims
- 1579US10510880B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 1679US2025343152A1Semiconductor device structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1778US9048255B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 2, 2015·2 cites·20 claims
- 1877US2024387726A1Dual Gate Structures For Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1976US11424244B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 2075US10964810B2Methodology and structure for field plate designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 2175US10109732B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·1 cites·20 claims
- 2274US11031495B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 2373US12132108B2Dual gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
- 2472US8921934B2FinFET with trench field plateNG CHUN-WAI·Filed 2012·Granted Dec 30, 2014·2 cites·20 claims
- 2570US10680100B2Field structure and methodologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·1 cites·20 claims
- 2668US10840246B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 2768US2023026676A1Semiconductor device structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2867US10686065B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 2967US8933507B2Metal/polysilicon gate trench power mosfetNG CHUN-WAI·Filed 2012·Granted Jan 13, 2015·2 cites·20 claims
- 3066US11894459B2Dual gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 3164US10304829B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·0 cites·20 claims
- 3262US8969955B2Power MOSFET and methods for forming the sameNG CHUN-WAI·Filed 2012·Granted Mar 3, 2015·1 cites·21 claims
- 3361US9825035B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 21, 2017·0 cites·20 claims
- 3459US9905674B2Vertical power MOSFET and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 27, 2018·0 cites·19 claims
- 3559US9673297B2Vertical power MOSFET and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·0 cites·19 claims
- 3659US9620635B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·0 cites·20 claims
- 3758US10141421B2Vertical power MOSFET and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 3858US10090390B2FinFET with trench field plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 2, 2018·0 cites·20 claims
- 3958US10050126B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 4058US9553029B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·0 cites·20 claims
- 4158US2020006489A1MOSFET Having Drain Region Formed Between Two Gate Electrodes with Body Contact Region and Source Region Formed in a Double Well RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Application pending·0 cites
- 4257US2025203994A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4356US9130060B2Integrated circuit having a vertical power MOS transistorNG CHUN-WAI·Filed 2012·Granted Sep 8, 2015·0 cites·20 claims
- 4455US9627265B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·0 cites·20 claims
- 4554US8884369B2Vertical power MOSFET and methods of forming the sameNG CHUN-WAI·Filed 2012·Granted Nov 11, 2014·0 cites·19 claims
- 4653US9178041B2Power MOSFET and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·0 cites·20 claims
- 4753US2025194143A1Laterally-diffused metal-oxide semiconductor (ldmos) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4852US2017250252A1MOSFET Having Source Region Formed in a Double Wells RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Application pending·0 cites
- 4950US9087920B2Vertical power MOSFET and methods of forming the sameNG CHUN-WAI·Filed 2012·Granted Jul 21, 2015·0 cites·20 claims
- 5049US2024379842A1Semiconductor device with schottky barrier interface and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →