Inventor · disambiguated record
Po-Yu Yang
Also filed as: YANG PO-YU
67 granted patents·18 pending applications·49 citations·filing 2011–2025
98Inventor score
Files withUNITED MICROELECTRONICS CORP80GETAC TECHNOLOGY CORP2CHENG HUANG-CHUNG1QUANTA COMP INC1YANG PO-YU1
Top patents by PatentIndex Score
85 records- 0197US11948990B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Apr 2, 2024·3 cites·17 claims
- 0297US10985271B2High electron mobility transistor with improved barrier layerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 20, 2021·17 cites·11 claims
- 0396US12255245B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Granted Mar 18, 2025·2 cites·19 claims
- 0496US11538915B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 27, 2022·3 cites·17 claims
- 0594US11355494B1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jun 7, 2022·5 cites·20 claims
- 0691US11990539B2Semiconductor device with conformal dielectric layer and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted May 21, 2024·2 cites·18 claims
- 0791US11508691B2Semiconductor structure with nano-twinned metal coating layer and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 22, 2022·2 cites·20 claims
- 0891US11387412B2Resistive memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jul 12, 2022·2 cites·17 claims
- 0990US12080787B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Sep 3, 2024·1 cites·12 claims
- 1089US11894373B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 6, 2024·2 cites·13 claims
- 1189US9530841B1Gate-all-around nanowire field-effect transistor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·6 cites·14 claims
- 1287US12294026B2High electron mobility transistor with improved barrier layerUNITED MICROELECTRONICS CORP·Filed 2023·Granted May 6, 2025·0 cites·10 claims
- 1386US12389624B2High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Aug 12, 2025·0 cites·8 claims
- 1486US2025338540A1High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1585US12268028B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Apr 1, 2025·0 cites·6 claims
- 1685US2025040172A1High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1784US2025261395A1High electron mobility transistor with improved barrier layerUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1881US12142676B2High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Nov 12, 2024·0 cites·9 claims
- 1981US11894453B2High electron mobility transistor with improved barrier layerUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 6, 2024·0 cites·15 claims
- 2080US12154958B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 2180US2025040195A1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2280US2025081495A1High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2379US12342562B2High electron mobility transistor and method for forming the same using the metal gate layer and spacer as an etch maskUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jun 24, 2025·0 cites·7 claims
- 2479US12274080B2High electron mobility transistor including conductive plate filling trenches in passivation layer, and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Apr 8, 2025·0 cites·3 claims
- 2579US12034055B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 9, 2024·0 cites·17 claims
- 2679US11961889B2Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Apr 16, 2024·0 cites·7 claims
- 2779US11894434B2Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 6, 2024·0 cites·14 claims
- 2877US12315767B2Semiconductor dieUNITED MICROELECTRONICS CORP·Filed 2024·Granted May 27, 2025·0 cites·3 claims
- 2975US11462636B2Method for manufacturing high electron mobility transistor with at least two barrier layersUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 4, 2022·0 cites·9 claims
- 3075US2025203901A1High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3175US2025072026A1Hemt with stair-like compound layer at drainUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 3274US11563096B2Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 24, 2023·0 cites·10 claims
- 3374US11276435B2Vibration isolation apparatus for server rack deliveryQUANTA COMP INC·Filed 2018·Granted Mar 15, 2022·2 cites·18 claims
- 3473US12342567B2Semiconductor device and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2024·Granted Jun 24, 2025·0 cites·15 claims
- 3573US12154981B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Nov 26, 2024·0 cites·14 claims
- 3673US12051740B2High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jul 30, 2024·0 cites·9 claims
- 3773US12046669B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jul 23, 2024·0 cites·8 claims
- 3873US10276446B1Method of adjusting signal to noise ratio of SRAM and invertor structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 30, 2019·2 cites·6 claims
- 3972US11195045B2Method for regulating position of objectGETAC TECHNOLOGY CORP·Filed 2020·Granted Dec 7, 2021·0 cites·14 claims
- 4072US2024128317A1Silicon on insulator deviceUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 4171US11658223B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted May 23, 2023·0 cites·21 claims
- 4271US11650164B2Artificial neural network-based method for selecting surface type of objectGETAC TECHNOLOGY CORP·Filed 2020·Granted May 16, 2023·0 cites·16 claims
- 4371US11444196B2Method for fabricating semiconductor device with asymmetric strained source/drain structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted Sep 13, 2022·0 cites·5 claims
- 4470US12224333B2HEMT with stair-like compound layer at drainUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 11, 2025·0 cites·13 claims
- 4570US12176414B2High electron mobility transistor and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 24, 2024·0 cites·8 claims
- 4670US11508839B2High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 22, 2022·0 cites·6 claims
- 4770US11450766B2High electron mobility transistor with trench isolation structure capable of applying stressUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 20, 2022·0 cites·6 claims
- 4870US11444195B2Method for fabricating semiconductor device with asymmetric strained source/drain structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted Sep 13, 2022·0 cites·3 claims
- 4969US11935948B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Mar 19, 2024·0 cites·4 claims
- 5069US11832536B2Manufacturing method of resistive memory deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Nov 28, 2023·0 cites·4 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →