Inventor · disambiguated record
Qi Xiang
Also filed as: XIANG QI · XIANG QI DONG
207 granted patents·10 pending applications·9,339 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
217 records- 0199US6800910B2FinFET device incorporating strained silicon in the channel regionADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 5, 2004·295 cites·30 claims
- 0299US6682973B1Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applicationsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 27, 2004·595 cites·18 claims
- 0398US7071051B1Method for forming a thin, high quality buffer layer in a field effect transistor and related structureADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 4, 2006·550 cites·10 claims
- 0498US6703648B1Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 9, 2004·200 cites·9 claims
- 0598US6657276B1Shallow trench isolation (STI) region with high-K liner and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·198 cites·10 claims
- 0698US6657223B1Strained silicon MOSFET having silicon source/drain regions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·173 cites·11 claims
- 0798US6600170B1CMOS with strained silicon channel NMOS and silicon germanium channel PMOSADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 29, 2003·212 cites·8 claims
- 0898US6255169B1Process for fabricating a high-endurance non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·268 cites·14 claims
- 0998US6211044B1Process for fabricating a semiconductor device component using a selective silicidation reactionADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 3, 2001·242 cites·27 claims
- 1097US6528858B1MOSFETs with differing gate dielectrics and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·162 cites·31 claims
- 1197US6504214B1MOSFET device having high-K dielectric layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 7, 2003·160 cites·8 claims
- 1297US6465334B1Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·154 cites·18 claims
- 1397US6093594ACMOS optimization method utilizing sacrificial sidewall spacerADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 25, 2000·264 cites·20 claims
- 1496US7078299B2Formation of finFET using a sidewall epitaxial layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 18, 2006·118 cites·11 claims
- 1596US6811448B1Pre-cleaning for silicidation in an SMOS processADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·123 cites·20 claims
- 1696US6797602B1Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contactsADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 28, 2004·113 cites·18 claims
- 1796US6787864B2Mosfets incorporating nickel germanosilicided gate and methods for their formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·126 cites·21 claims
- 1896US6555879B1SOI device with metal source/drain and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·135 cites·19 claims
- 1996US6479866B1SOI device with self-aligned selective damage implant, and methodADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 12, 2002·120 cites·8 claims
- 2096US6475874B2Damascene NiSi metal gate high-k transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·137 cites·14 claims
- 2196US6410938B1Semiconductor-on-insulator device with nitrided buried oxide and method of fabricatingADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 25, 2002·114 cites·20 claims
- 2295US6855982B1Self aligned double gate transistor having a strained channel region and process thereforADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 15, 2005·103 cites·20 claims
- 2395US6707106B1Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·91 cites·20 claims
- 2495US6562718B1Process for forming fully silicided gatesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·107 cites·18 claims
- 2594US6955969B2Method of growing as a channel region to reduce source/drain junction capacitanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 18, 2005·89 cites·16 claims
- 2694US6902991B2Semiconductor device having a thick strained silicon layer and method of its formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 7, 2005·76 cites·23 claims
- 2794US6630720B1Asymmetric semiconductor device having dual work function gate and method of fabricationADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·75 cites·21 claims
- 2894US6586808B1Semiconductor device having multi-work function gate electrode and multi-segment gate dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 1, 2003·86 cites·9 claims
- 2994US6159782AFabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constantADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 12, 2000·126 cites·14 claims
- 3093US7138302B2Method of fabricating an integrated circuit channel regionADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 21, 2006·70 cites·20 claims
- 3193US6929992B1Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shiftADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 16, 2005·78 cites·4 claims
- 3292US6787423B1Strained-silicon semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·69 cites·8 claims
- 3392US6656749B1In-situ monitoring during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 2, 2003·57 cites·11 claims
- 3491US8264214B1Very low voltage reference circuitRATNAKUMAR ALBERT·Filed 2011·Granted Sep 11, 2012·12 cites·20 claims
- 3591US6943087B1Semiconductor on insulator MOSFET having strained silicon channelADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 13, 2005·59 cites·15 claims
- 3691US6878592B1Selective epitaxy to improve silicidationADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 12, 2005·51 cites·22 claims
- 3791US6849527B1Strained silicon MOSFET having improved carrier mobility, strained silicon CMOS device, and methods of their formationADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·49 cites·20 claims
- 3891US6465309B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·57 cites·14 claims
- 3991US6437404B1Semiconductor-on-insulator transistor with recessed source and drainADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 20, 2002·64 cites·28 claims
- 4091US6187657B1Dual material gate MOSFET techniqueADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 13, 2001·120 cites·42 claims
- 4191US6087231AFabrication of dual gates of field transistors with prevention of reaction between the gate electrode and the gate dielectric with a high dielectric constantADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 11, 2000·102 cites·15 claims
- 4290US8530976B1Memory element transistors with reversed-workfunction gate conductorsRATNAKUMAR ALBERT·Filed 2011·Granted Sep 10, 2013·12 cites·17 claims
- 4390US8242581B1Mixed-gate metal-oxide-semiconductor varactorsRATNAKUMAR ALBERT·Filed 2008·Granted Aug 14, 2012·20 cites·18 claims
- 4490US6555439B1Partial recrystallization of source/drain region before laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·53 cites·14 claims
- 4590US6524929B1Method for shallow trench isolation using passivation material for trench bottom linerADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 25, 2003·51 cites·19 claims
- 4690US6514809B1SOI field effect transistors with body contacts formed by selective etch and fillADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 4, 2003·54 cites·6 claims
- 4789US7033869B1Strained silicon semiconductor on insulator MOSFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·48 cites·12 claims
- 4889US6852600B1Strained silicon MOSFET having silicon source/drain regions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 8, 2005·39 cites·20 claims
- 4989US6764908B1Narrow width CMOS devices fabricated on strained lattice semiconductor substrates with maximized NMOS and PMOS drive currentsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·50 cites·20 claims
- 5089US6734527B1CMOS devices with balanced drive currents based on SiGeADVANCED MICRO DEVICES INC·Filed 2002·Granted May 11, 2004·39 cites·7 claims
Showing the top 50 of 217 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →