Inventor · disambiguated record
Qufei Chen
Also filed as: CHEN QUFEI
20 granted patents·2 pending applications·233 citations·filing 2004–2017
95Inventor score
Top patents by PatentIndex Score
22 records- 0197US7795675B2Termination for trench MIS deviceSILICONIX INC·Filed 2005·Granted Sep 14, 2010·99 cites·10 claims
- 0295US7544545B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2005·Granted Jun 9, 2009·27 cites·20 claims
- 0394US9425304B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2014·Granted Aug 23, 2016·14 cites·20 claims
- 0490US9716166B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 0590US9431550B2Trench polysilicon diodeCHEN QUFEI·Filed 2011·Granted Aug 30, 2016·9 cites·13 claims
- 0685US9425306B2Super junction trench power MOSFET devicesGAO YANG·Filed 2009·Granted Aug 23, 2016·12 cites·11 claims
- 0783US9443974B2Super junction trench power MOSFET device fabricationGAO YANG·Filed 2009·Granted Sep 13, 2016·11 cites·9 claims
- 0882US7045857B2Termination for trench MIS device having implanted drain-drift regionSILICONIX INC·Filed 2004·Granted May 16, 2006·24 cites·7 claims
- 0980US8409954B2Ultra-low drain-source resistance power MOSFETCHAU THE-TU·Filed 2006·Granted Apr 2, 2013·8 cites·7 claims
- 1080US7268032B2Termination for trench MIS device having implanted drain-drift regionSILICONIX INC·Filed 2005·Granted Sep 11, 2007·7 cites·11 claims
- 1179US9431530B2Super-high density trench MOSFETXU ROBERT Q·Filed 2010·Granted Aug 30, 2016·5 cites·15 claims
- 1271US9484451B2MOSFET active area and edge termination area charge balanceCHEN QUFEI·Filed 2008·Granted Nov 1, 2016·4 cites·15 claims
- 1370US10084037B2MOSFET active area and edge termination area charge balanceVISHAY SILICONIX·Filed 2016·Granted Sep 25, 2018·1 cites·20 claims
- 1467US7612431B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2008·Granted Nov 3, 2009·2 cites·10 claims
- 1566US8072013B1Trench polysilicon diodeCHEN QUFEI·Filed 2009·Granted Dec 6, 2011·2 cites·16 claims
- 1663US9722041B2Breakdown voltage blocking deviceVISHAY SILICONIX·Filed 2012·Granted Aug 1, 2017·1 cites·20 claims
- 1762US9306056B2Semiconductor device with trench-like feed-throughsPATTANAYAK DEVA·Filed 2009·Granted Apr 5, 2016·2 cites·21 claims
- 1859US10181523B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2017·Granted Jan 15, 2019·0 cites·20 claims
- 1950US9887266B2Ultra-low drain-source resistance power MOSFETCHAU THE TU·Filed 2008·Granted Feb 6, 2018·0 cites·17 claims
- 2047US10032901B2Semiconductor device with trench-like feed-throughsVISHAY SILICONIX·Filed 2016·Granted Jul 24, 2018·0 cites·15 claims
- 2138US2012211828A1Hybrid split gate semiconductorBOBDE MADHUR·Filed 2012·Application pending·0 cites
- 2238US2012220092A1Method of forming a hybrid split gate simiconductorBOBDE MADHUR·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →