Inventor · disambiguated record
R. Stockton Gaines
Also filed as: GAINES R STOCKTON
34 granted patents·5 pending applications·581 citations·filing 1994–2025
97Inventor score
Files withACORN TECH INC21ACORN SEMI LLC13CLIFTON PAUL A3GAINES R STOCKTON1PURCHASED PATENT MAN LLC1
Top patents by PatentIndex Score
39 records- 0197US11728624B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2022·Granted Aug 15, 2023·2 cites·50 claims
- 0297US9270083B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2015·Granted Feb 23, 2016·10 cites·30 claims
- 0396US9036672B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2014·Granted May 19, 2015·12 cites·20 claims
- 0496US8731017B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemCLIFTON PAUL A·Filed 2011·Granted May 20, 2014·26 cites·27 claims
- 0596US7700416B1Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layerACORN TECH INC·Filed 2008·Granted Apr 20, 2010·53 cites·36 claims
- 0695US9362376B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN TECH INC·Filed 2012·Granted Jun 7, 2016·13 cites·26 claims
- 0794US7851325B1Strained semiconductor using elastic edge relaxation, a buried stressor layer and a sacrificial stressor layerACORN TECH INC·Filed 2008·Granted Dec 14, 2010·23 cites·19 claims
- 0894US5961582ADistributed and portable execution environmentACORN TECH INC·Filed 1994·Granted Oct 5, 1999·252 cites·7 claims
- 0993US10193307B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2017·Granted Jan 29, 2019·4 cites·21 claims
- 1091US6594103B1Read channel generating absolute value servo signalACORN TECH INC·Filed 1999·Granted Jul 15, 2003·75 cites·10 claims
- 1189US7756196B1Efficient adaptive filters for CDMA wireless systemsACORN TECH INC·Filed 2005·Granted Jul 13, 2010·16 cites·10 claims
- 1289US6525897B2Apparatus for developing a dynamic servo signal from data in a magnetic disc drive and methodACORN TECH INC·Filed 2001·Granted Feb 25, 2003·24 cites·34 claims
- 1388US8395213B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerCLIFTON PAUL A·Filed 2010·Granted Mar 12, 2013·12 cites·46 claims
- 1488US2025275218A1Metal contacts to group iv semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 1587US12336263B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2023·Granted Jun 17, 2025·0 cites·14 claims
- 1687US7972916B1Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recessesACORN TECH INC·Filed 2008·Granted Jul 5, 2011·14 cites·26 claims
- 1787US2023344200A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2023·Application pending·0 cites
- 1885US11804533B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2023·Granted Oct 31, 2023·0 cites·8 claims
- 1983US11978800B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2022·Granted May 7, 2024·0 cites·14 claims
- 2080US8003486B2Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layerACORN TECH INC·Filed 2010·Granted Aug 23, 2011·4 cites·13 claims
- 2179US2025158362A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 2279US2025167523A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 2378US9406798B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerCLIFTON PAUL A·Filed 2013·Granted Aug 2, 2016·2 cites·16 claims
- 2477US11610974B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 2577US11476364B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2021·Granted Oct 18, 2022·0 cites·28 claims
- 2677US10727647B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2018·Granted Jul 28, 2020·0 cites·15 claims
- 2777USRE40413EMethod and apparatus for developing a dynamic servo signal from dataPURCHASED PATENT MAN LLC·Filed 2005·Granted Jul 1, 2008·4 cites·53 claims
- 2876US11271370B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2020·Granted Mar 8, 2022·0 cites·21 claims
- 2973US10950727B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2020·Granted Mar 16, 2021·0 cites·19 claims
- 3073US6381088B1Apparatus for developing a dynamic servo signal from data in a magnetic disc drive and methodACORN TECH INC·Filed 1998·Granted Apr 30, 2002·22 cites·70 claims
- 3172US10879366B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2019·Granted Dec 29, 2020·0 cites·29 claims
- 3267US10580896B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN TECH INC·Filed 2018·Granted Mar 3, 2020·0 cites·22 claims
- 3365US10505005B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN TECH INC·Filed 2017·Granted Dec 10, 2019·0 cites·10 claims
- 3464US10084091B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN TECH INC·Filed 2017·Granted Sep 25, 2018·0 cites·11 claims
- 3564US10008827B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2016·Granted Jun 26, 2018·0 cites·20 claims
- 3662US9755038B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN TECH INC·Filed 2016·Granted Sep 5, 2017·0 cites·11 claims
- 3762US9484426B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN TECH INC·Filed 2016·Granted Nov 1, 2016·0 cites·7 claims
- 3848US2009101972A1Process for fabricating a field-effect transistor with doping segregation used in source and/or drainGAINES R STOCKTON·Filed 2008·Application pending·0 cites
- 3940US6397369B1Device for using information about the extent of errors in a signal and methodACORN TECH INC·Filed 1998·Granted May 28, 2002·13 cites·39 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →