Inventor · disambiguated record
Raymond Hung
Also filed as: HUNG RAYMOND · HUNG RAYMOND HOIMAN
25 granted patents·6 pending applications·1,395 citations·filing 1996–2024
96Inventor score
Top patents by PatentIndex Score
31 records- 0198US6054013AParallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion densityAPPLIED MATERIALS INC·Filed 1996·Granted Apr 25, 2000·596 cites·19 claims
- 0296US6077384APlasma reactor having an inductive antenna coupling power through a parallel plate electrodeAPPLIED MATERIALS INC·Filed 1996·Granted Jun 20, 2000·237 cites·67 claims
- 0395US6623596B1Plasma reactor having an inductive antenna coupling power through a parallel plate electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Sep 23, 2003·84 cites·136 claims
- 0493US6440864B1Substrate cleaning processAPPLIED MATERIALS INC·Filed 2000·Granted Aug 27, 2002·119 cites·46 claims
- 0590US6524432B1Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion densityAPPLIED MATERIALS INC·Filed 2000·Granted Feb 25, 2003·49 cites·72 claims
- 0689US9735009B2Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channelAPPLIED MATERIALS INC·Filed 2015·Granted Aug 15, 2017·5 cites·12 claims
- 0789US6174451B1Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbonsAPPLIED MATERIALS INC·Filed 1998·Granted Jan 16, 2001·94 cites·52 claims
- 0885US6238588B1High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch processAPPLIED MATERIALS INC·Filed 1996·Granted May 29, 2001·84 cites·24 claims
- 0981US10163630B2Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high k at channelAPPLIED MATERIALS INC·Filed 2017·Granted Dec 25, 2018·2 cites·17 claims
- 1078US9960275B1Method of fabricating air-gap spacer for N7/N5 finFET and beyondAPPLIED MATERIALS INC·Filed 2017·Granted May 1, 2018·2 cites·20 claims
- 1177US10475655B2Selective deposition of metal silicidesAPPLIED MATERIALS INC·Filed 2018·Granted Nov 12, 2019·2 cites·18 claims
- 1277US6613691B1Highly selective oxide etch process using hexafluorobutadieneAPPLIED MATERIALS INC·Filed 2000·Granted Sep 2, 2003·17 cites·13 claims
- 1374US5965035ASelf aligned contact etch using difluoromethane and trifluoromethaneAPPLIED MATERIALS INC·Filed 1997·Granted Oct 12, 1999·46 cites·9 claims
- 1473US6193836B1Center gas feed apparatus for a high density plasma reactorAPPLIED MATERIALS INC·Filed 2000·Granted Feb 27, 2001·9 cites·13 claims
- 1570US2024038859A1Metal cap for contact resistance reductionAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1665US12347695B2Methods for controlling contact resistance in cobalt-titanium structuresAPPLIED MATERIALS INC·Filed 2022·Granted Jul 1, 2025·0 cites·13 claims
- 1762US10615034B2Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channelAPPLIED MATERIALS INC·Filed 2018·Granted Apr 7, 2020·0 cites·19 claims
- 1861US2025385111A1Methods and Apparatus for Determining a Property of a Substrate SurfaceAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1959US8293460B2Double exposure patterning with carbonaceous hardmaskCHEN HUI W·Filed 2008·Granted Oct 23, 2012·2 cites·8 claims
- 2059US6329292B1Integrated self aligned contact etchAPPLIED MATERIALS INC·Filed 1998·Granted Dec 11, 2001·25 cites·4 claims
- 2159US6027606ACenter gas feed apparatus for a high density plasma reactorAPPLIED MATERIALS INC·Filed 1998·Granted Feb 22, 2000·22 cites·23 claims
- 2259US2022231137A1Metal cap for contact resistance reductionAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 2359US2024412948A1Methods and apparatus for rps-rf plasma clean and activation for advanced semiconductor packagingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2457US11626288B2Integrated contact silicide with tunable work functionsAPPLIED MATERIALS INC·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2556US11424132B2Methods and apparatus for controlling contact resistance in cobalt-titanium structuresAPPLIED MATERIALS INC·Filed 2019·Granted Aug 23, 2022·0 cites·13 claims
- 2656US2025167167A1Die Stacking with Integrated Thermal TreatmentAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2751US11355391B2Method for forming a metal gapfillAPPLIED MATERIALS INC·Filed 2020·Granted Jun 7, 2022·0 cites·19 claims
- 2849US11417568B2Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfillAPPLIED MATERIALS INC·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 2948US11037838B2In-situ integrated chambersAPPLIED MATERIALS INC·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 3046US10586707B2Selective deposition of metal silicidesAPPLIED MATERIALS INC·Filed 2018·Granted Mar 10, 2020·0 cites·15 claims
- 3145US2021066064A1Methods and apparatus for cleaning metal contactsAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →