Inventor · disambiguated record
Ralf Lerner
Also filed as: LERNER RALF
29 granted patents·10 pending applications·81 citations·filing 2003–2025
94Inventor score
Files withX FAB SEMICONDUCTOR FOUNDRIES13LERNER RALF10X FAB SEMICONDUCTOR FOUNDRIES GMBH9KITTLER GABRIEL2MELEXIS TECHNOLOGIES NV2
Top patents by PatentIndex Score
39 records- 0192US8278183B2Production of isolation trenches with different sidewall dopingsLERNER RALF·Filed 2008·Granted Oct 2, 2012·32 cites·16 claims
- 0281US8759169B2Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor componentsKITTLER GABRIEL·Filed 2010·Granted Jun 24, 2014·8 cites·19 claims
- 0378US10186502B1Integrated circuit having a component provided by transfer print and method for making the integrated circuitX FAB SEMICONDUCTOR FOUNDRIES·Filed 2017·Granted Jan 22, 2019·2 cites·26 claims
- 0475US2024371669A1Carrier substrate for semiconductor structures suitable for a transfer by transfer print and manufacturing of the semiconductor structures on the carrier substrateX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2024·Application pending·0 cites
- 0571US11916104B2Trench insulation structure with enlarged electrically conductive side wallX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2022·Granted Feb 27, 2024·0 cites·9 claims
- 0671US8823095B2MOS-power transistors with edge termination with small area requirementLERNER RALF·Filed 2007·Granted Sep 2, 2014·5 cites·6 claims
- 0769US12334274B2Trench capacitorsMELEXIS TECHNOLOGIES NV·Filed 2023·Granted Jun 17, 2025·0 cites·16 claims
- 0869US2025285810A1Trench capacitorsMELEXIS TECHNOLOGIES NV·Filed 2025·Application pending·0 cites
- 0967US8053897B2Production of a carrier wafer contact in trench insulated integrated SOI circuits having high-voltage componentsX FAB SEMICONDUCTOR FOUNDRIES·Filed 2006·Granted Nov 8, 2011·4 cites·18 claims
- 1065US11829074B2Geometrically shaped components in an assembly for a transfer print and associated methodsX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2020·Granted Nov 28, 2023·0 cites·10 claims
- 1165US8546207B2Method for fabricating semiconductor wafers for the integration of silicon components with HEMTs, and appropriate semiconductor layer arrangementKITTLER GABRIEL·Filed 2010·Granted Oct 1, 2013·3 cites·6 claims
- 1265US7625805B2Passivation of deep isolating separating trenches with sunk covering layersX FAB SEMICONDUCTOR FOUNDRIES·Filed 2005·Granted Dec 1, 2009·4 cites·32 claims
- 1362US8247884B2Semiconductor structure for fabricating a handle wafer contact in a trench insulated SOI discLERNER RALF·Filed 2008·Granted Aug 21, 2012·2 cites·29 claims
- 1461US11355582B2Trench insulation structure with enlarged electrically conductive side wallX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2020·Granted Jun 7, 2022·0 cites·7 claims
- 1560US7588948B2Test structure for electrically verifying the depths of trench-etching in an SOI wafer, and associated working methodsX FAB SEMICONDUCTOR FOUNDRIES·Filed 2004·Granted Sep 15, 2009·7 cites·27 claims
- 1660US2024355775A1Semiconductor wafer and (micro) transfer printing processX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2024·Application pending·0 cites
- 1756US10845710B2Geometrically shaped components in an assembly for a transfer print and associated methodsX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2018·Granted Nov 24, 2020·0 cites·15 claims
- 1854US7598098B2Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of materialX FAB SEMICONDUCTOR FOUNDRIES·Filed 2004·Granted Oct 6, 2009·6 cites·19 claims
- 1954US2025089276A1Cmos devices for high-voltage applicationsLERNER RALF·Filed 2024·Application pending·0 cites
- 2053US9070768B2DMOS transistor having an increased breakdown voltage and method for productionLERNER RALF·Filed 2010·Granted Jun 30, 2015·2 cites·15 claims
- 2152US11437266B2Method of manufacturing semiconductor devices to increase yield in micro-transfer printingX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2020·Granted Sep 6, 2022·0 cites·21 claims
- 2252US7271074B2Trench insulation in substrate disks comprising logic semiconductors and power semiconductorsX FAB SEMICONDUCTOR FOUNDRIES·Filed 2003·Granted Sep 18, 2007·6 cites·21 claims
- 2350US2018068872A1Carrier Substrate For Semiconductor Structures Suitable For A Transfer By Transfer Print And Manufacturing Of The Semiconductor Structures On The Carrier SubstrateX FAB SEMICONDUCTOR FOUNDRIES·Filed 2017·Application pending·0 cites
- 2447US8530999B2Semiconductor component with isolation trench intersectionsLERNER RALF·Filed 2009·Granted Sep 10, 2013·0 cites·20 claims
- 2545US11600603B2Semiconductor device along with multi-functional units and method for manufacturing a semiconductor deviceX FAB GLOBAL SERVICES GMBH·Filed 2020·Granted Mar 7, 2023·0 cites·33 claims
- 2645US10930497B2Semiconductor substrate and method for producing a semiconductor substrateX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2018·Granted Feb 23, 2021·0 cites·23 claims
- 2745US8793116B2Method for the construction of vertical power transistors with differing powers by combination of pre-defined part piecesLERNER RALF·Filed 2012·Granted Jul 29, 2014·0 cites·7 claims
- 2844US8921945B2High-voltage power transistor using SOI technologyLERNER RALF·Filed 2009·Granted Dec 30, 2014·0 cites·12 claims
- 2944US2009113362A1Method for designing a mask for an integrated circuit having separate testing of design rules for different regions of a mask planeX FAB SEMICONDUCTOR FOUNDRIES·Filed 2006·Application pending·0 cites
- 3043US2009294893A1Isolation trench intersection structure with reduced gap widthX FAB SEMICONDUCTOR FOUNDRIES·Filed 2006·Application pending·0 cites
- 3142US8190415B2Method for the construction of vertical power transistors with differing powers by combination of pre-defined part piecesLERNER RALF·Filed 2005·Granted May 29, 2012·0 cites·16 claims
- 3241US2009090992A1Isolation trench structure for high electric strengthX FAB SEMICONDUCTOR FOUNDRIES·Filed 2006·Application pending·0 cites
- 3340US7517813B2Two-step oxidation process for semiconductor wafersX FAB SEMICONDUCTOR FOUNDRIES·Filed 2005·Granted Apr 14, 2009·0 cites·19 claims
- 3439US8448101B2Layout method for vertical power transistors having a variable channel widthLERNER RALF·Filed 2006·Granted May 21, 2013·0 cites·5 claims
- 3539US7989921B2Soi vertical bipolar power componentX FAB SEMICONDUCTOR FOUNDRIES·Filed 2005·Granted Aug 2, 2011·0 cites·9 claims
- 3637US2022037269A1Semiconductor device for power electronics applicationsX FAB GLOBAL SERVICES GMBH·Filed 2021·Application pending·0 cites
- 3734US7989308B2Creation of dielectrically insulating soi-technlogical trenches comprising rounded edges for allowing higher voltagesX FAB SEMICONDUCTOR FOUNDRIES·Filed 2005·Granted Aug 2, 2011·0 cites·7 claims
- 3830US2017352458A1Planar coilX-FAB SEMICONDUCTOR FOUNDRIES AG·Filed 2017·Application pending·0 cites
- 3928US11037812B2Method for a transfer print between substratesX FAB SEMICONDUCTOR FOUNDRIES GMBH·Filed 2017·Granted Jun 15, 2021·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →