Inventor · disambiguated record
Raghavasimhan Sreenivasan
Also filed as: SREENIVASAN RAGHAVASIMHAN
39 granted patents·9 pending applications·148 citations·filing 2012–2016
97Inventor score
Top patents by PatentIndex Score
48 records- 0195US8728927B1Borderless contacts for semiconductor transistorsIBM·Filed 2012·Granted May 20, 2014·21 cites·25 claims
- 0295US8697536B1Locally isolated protected bulk finfet semiconductor deviceIBM·Filed 2012·Granted Apr 15, 2014·16 cites·19 claims
- 0394US9269792B2Method and structure for robust finFET replacement metal gate integrationIBM·Filed 2014·Granted Feb 23, 2016·17 cites·20 claims
- 0494US8872172B2Embedded source/drains with epitaxial oxide underlayerIBM·Filed 2012·Granted Oct 28, 2014·16 cites·17 claims
- 0592US9034703B2Self aligned contact with improved robustnessCHENG KANGGUO·Filed 2012·Granted May 19, 2015·13 cites·20 claims
- 0690US9190487B2Prevention of fin erosion for semiconductor devicesIBM·Filed 2014·Granted Nov 17, 2015·9 cites·10 claims
- 0787US8679885B1Self-aligned biosensors with enhanced sensitivityIBM·Filed 2013·Granted Mar 25, 2014·7 cites·9 claims
- 0885US9281198B2Method of fabricating a semiconductor device including embedded crystalline back-gate bias planesGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 8, 2016·6 cites·19 claims
- 0985US8809920B2Prevention of fin erosion for semiconductor devicesIBM·Filed 2012·Granted Aug 19, 2014·6 cites·9 claims
- 1082US9105606B2Self aligned contact with improved robustnessIBM·Filed 2014·Granted Aug 11, 2015·5 cites·18 claims
- 1179US9087796B2Semiconductor fabrication method using stop layerIBM·Filed 2013·Granted Jul 21, 2015·4 cites·14 claims
- 1276US9379135B2FinFET semiconductor device having increased gate height controlGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 28, 2016·2 cites·15 claims
- 1375US9368343B1Reduced external resistance finFET deviceIBM·Filed 2015·Granted Jun 14, 2016·2 cites·19 claims
- 1475US9059253B2Self-aligned contacts for replacement metal gate transistorsIBM·Filed 2014·Granted Jun 16, 2015·3 cites·9 claims
- 1575US8802565B2Semiconductor plural gate lengthsHARTIG MICHAEL J·Filed 2012·Granted Aug 12, 2014·5 cites·18 claims
- 1674US10475886B2Modified fin cut after epitaxial growthIBM·Filed 2014·Granted Nov 12, 2019·2 cites·10 claims
- 1773US9417501B2Electrically controlled optical fuse and method of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 16, 2016·0 cites·7 claims
- 1872US9224607B2Dual epitaxy region integrationGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 29, 2015·2 cites·17 claims
- 1969US8975675B2Locally isolated protected bulk FinFET semiconductor deviceIBM·Filed 2014·Granted Mar 10, 2015·1 cites·3 claims
- 2068US9472576B2Structure and method to reduce crystal defects in epitaxial fin merge using nitride depositionIBM·Filed 2015·Granted Oct 18, 2016·1 cites·18 claims
- 2168US9257536B2FinFET with crystalline insulatorGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 9, 2016·2 cites·9 claims
- 2268US8923666B2Electrically controlled optical fuse and method of fabricationCHENG KANGGUO·Filed 2012·Granted Dec 30, 2014·0 cites·8 claims
- 2364US9496282B2Structure and method to reduce crystal defects in epitaxial fin merge using nitride depositionIBM·Filed 2013·Granted Nov 15, 2016·1 cites·11 claims
- 2464US9059242B2FinFET semiconductor device having increased gate height controlIBM·Filed 2012·Granted Jun 16, 2015·1 cites·19 claims
- 2564US8884344B2Self-aligned contacts for replacement metal gate transistorsIBM·Filed 2013·Granted Nov 11, 2014·1 cites·13 claims
- 2663US8896032B2Self-aligned biosensors with enhanced sensitivityIBM·Filed 2013·Granted Nov 25, 2014·1 cites·16 claims
- 2763US8865561B2Back-gated substrate and semiconductor device, and related method of fabricationIBM·Filed 2013·Granted Oct 21, 2014·1 cites·17 claims
- 2862US9041116B2Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)DORIS BRUCE B·Filed 2012·Granted May 26, 2015·1 cites·10 claims
- 2961US9324709B2Self-aligned gate contact structureGLOBAL FOUNDRIES U S 2 LLC·Filed 2013·Granted Apr 26, 2016·2 cites·12 claims
- 3055US9331073B2Epitaxially grown quantum well finFETs for enhanced pFET performanceIBM·Filed 2014·Granted May 3, 2016·0 cites·10 claims
- 3155US9312273B2Structure and method to reduce crystal defects in epitaxial fin merge using nitride depositionIBM·Filed 2013·Granted Apr 12, 2016·0 cites·10 claims
- 3255US9299617B2Locally isolated protected bulk FinFET semiconductor deviceIBM·Filed 2015·Granted Mar 29, 2016·0 cites·8 claims
- 3355US2015214331A1Replacement metal gate including dielectric gate materialIBM·Filed 2014·Application pending·0 cites
- 3453US9728649B2Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabricationGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 8, 2017·0 cites·17 claims
- 3553US9653573B2Replacement metal gate including dielectric gate materialIBM·Filed 2015·Granted May 16, 2017·0 cites·1 claims
- 3651US2016172467A1Replacement metal gate including dielectric gate materialIBM·Filed 2016·Application pending·0 cites
- 3750US9105663B1FinFET with silicon germanium stressor and method of formingIBM·Filed 2014·Granted Aug 11, 2015·0 cites·20 claims
- 3849US9214397B2Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)GLOBALFOUNDRIES INC·Filed 2013·Granted Dec 15, 2015·0 cites·16 claims
- 3947US9812556B2Semiconductor device and method of manufacturing the semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 7, 2017·0 cites·16 claims
- 4047US9793379B2FinFET spacer without substrate gouging or spacer footIBM·Filed 2014·Granted Oct 17, 2017·0 cites·15 claims
- 4147US2016172380A1Modified fin cut after epitaxial growthIBM·Filed 2015·Application pending·0 cites
- 4246US2016093697A1Epitaxially grown quantum well finfets for enhanced pfet performanceIBM·Filed 2015·Application pending·0 cites
- 4345US9391069B1MIM capacitor with enhanced capacitance formed by selective epitaxyIBM·Filed 2015·Granted Jul 12, 2016·0 cites·20 claims
- 4443US2015228761A1Diamond shaped epitaxyIBM·Filed 2014·Application pending·0 cites
- 4541US2014167163A1Multi-Fin FinFETs with Epitaxially-Grown Merged Source/DrainsIBM·Filed 2012·Application pending·0 cites
- 4641US2013334603A1Isolation structure for semiconductor devicesCHENG KANGGUO·Filed 2012·Application pending·0 cites
- 4741US2013207226A1Recessed device region in epitaxial insulating layerADAM THOMAS N·Filed 2012·Application pending·0 cites
- 4839US2013270638A1Strained soi finfet on epitaxially grown boxADAM THOMAS N·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →