Inventor · disambiguated record
Rajasekhar Venigalla
Also filed as: VENIGALLA RAJASEKHAR
82 granted patents·14 pending applications·555 citations·filing 2004–2025
99Inventor score
Top patents by PatentIndex Score
96 records- 0199US9530700B1Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess etchIBM·Filed 2016·Granted Dec 27, 2016·65 cites·15 claims
- 0299US9437503B1Vertical FETs with variable bottom spacer recessIBM·Filed 2015·Granted Sep 6, 2016·73 cites·20 claims
- 0399US9431305B1Vertical transistor fabrication and devicesIBM·Filed 2015·Granted Aug 30, 2016·57 cites·13 claims
- 0498US9859421B1Vertical field effect transistor with subway etch replacement metal gateIBM·Filed 2016·Granted Jan 2, 2018·25 cites·10 claims
- 0598US9721848B1Cutting fins and gates in CMOS devicesIBM·Filed 2016·Granted Aug 1, 2017·32 cites·20 claims
- 0697US10170584B2Nanosheet field effect transistors with partial inside spacersIBM·Filed 2017·Granted Jan 1, 2019·11 cites·14 claims
- 0797US10083961B2Gate cut with integrated etch stop layerIBM·Filed 2016·Granted Sep 25, 2018·14 cites·17 claims
- 0897US9728466B1Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2016·Granted Aug 8, 2017·24 cites·14 claims
- 0996US11776957B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2022·Granted Oct 3, 2023·1 cites·22 claims
- 1096US11552077B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2021·Granted Jan 10, 2023·2 cites·25 claims
- 1196US10096607B1Three-dimensional stacked junctionless channels for dense SRAMIBM·Filed 2017·Granted Oct 9, 2018·14 cites·20 claims
- 1296US9978750B1Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devicesIBM·Filed 2017·Granted May 22, 2018·11 cites·17 claims
- 1396US9761727B2Vertical FETs with variable bottom spacer recessIBM·Filed 2016·Granted Sep 12, 2017·12 cites·6 claims
- 1496US9601491B1Vertical field effect transistors having epitaxial fin channel with spacers below gate structureIBM·Filed 2016·Granted Mar 21, 2017·10 cites·20 claims
- 1596US8643122B2Silicide contacts having different shapes on regions of a semiconductor deviceIBM·Filed 2012·Granted Feb 4, 2014·26 cites·9 claims
- 1696US8415250B2Method of forming silicide contacts of different shapes selectively on regions of a semiconductor deviceALPTEKIN EMRE·Filed 2011·Granted Apr 9, 2013·40 cites·9 claims
- 1795US9911804B1Vertical fin field effect transistor with air gap spacersIBM·Filed 2016·Granted Mar 6, 2018·8 cites·6 claims
- 1893US10109535B2Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess ETCHIBM·Filed 2016·Granted Oct 23, 2018·6 cites·13 claims
- 1993US9293551B2Integrated multiple gate length semiconductor device including self-aligned contactsIBM·Filed 2013·Granted Mar 22, 2016·12 cites·14 claims
- 2091US10998314B2Gate cut with integrated etch stop layerTESSERA INC·Filed 2020·Granted May 4, 2021·2 cites·17 claims
- 2191US10283416B2Vertical FETS with variable bottom spacer recessIBM·Filed 2018·Granted May 7, 2019·4 cites·20 claims
- 2290US2025142949A1Gate cut with integrated etch stop layerTESSERA LLC·Filed 2024·Application pending·0 cites
- 2388US12074165B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2488US11121317B2Low resistance crosspoint architectureMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 14, 2021·6 cites·8 claims
- 2588US10164119B2Vertical field effect transistors with protective fin liner during bottom spacer recess etchIBM·Filed 2017·Granted Dec 25, 2018·3 cites·19 claims
- 2688US9985115B2Vertical transistor fabrication and devicesIBM·Filed 2017·Granted May 29, 2018·3 cites·20 claims
- 2787US10170485B2Three-dimensional stacked junctionless channels for dense SRAMIBM·Filed 2018·Granted Jan 1, 2019·4 cites·20 claims
- 2887US9941411B2Vertical transistor fabrication and devicesIBM·Filed 2016·Granted Apr 10, 2018·3 cites·18 claims
- 2986US7056192B2Ceria-based polish processes, and ceria-based slurriesIBM·Filed 2004·Granted Jun 6, 2006·45 cites·6 claims
- 3085US11342446B2Nanosheet field effect transistors with partial inside spacersTESSERA INC·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 3185US11056391B2Subtractive vFET process flow with replacement metal gate and metallic source/drainIBM·Filed 2016·Granted Jul 6, 2021·4 cites·3 claims
- 3284US9793374B2Vertical transistor fabrication and devicesIBM·Filed 2016·Granted Oct 17, 2017·2 cites·15 claims
- 3383US10559670B2Nanosheet field effect transistors with partial inside spacersIBM·Filed 2017·Granted Feb 11, 2020·2 cites·20 claims
- 3482US9859384B2Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2017·Granted Jan 2, 2018·3 cites·14 claims
- 3580US10580773B2Gate cut with integrated etch stop layerIBM·Filed 2018·Granted Mar 3, 2020·1 cites·20 claims
- 3679US8420491B2Structure and method for replacement metal gate field effect transistorsUTOMO HENRY K·Filed 2010·Granted Apr 16, 2013·7 cites·12 claims
- 3778US10832971B2Fabricating tapered semiconductor devicesIBM·Filed 2018·Granted Nov 10, 2020·2 cites·20 claims
- 3878US10170543B2Vertical fin field effect transistor with air gap spacersIBM·Filed 2017·Granted Jan 1, 2019·1 cites·20 claims
- 3978US9466680B2Integrated multiple gate length semiconductor device including self-aligned contactsGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·2 cites·17 claims
- 4077US11075281B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2019·Granted Jul 27, 2021·1 cites·20 claims
- 4177US10424515B2Vertical FET devices with multiple channel lengthsIBM·Filed 2016·Granted Sep 24, 2019·2 cites·21 claims
- 4277US10243041B2Vertical fin field effect transistor with air gap spacersIBM·Filed 2017·Granted Mar 26, 2019·1 cites·16 claims
- 4376US10211207B2Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devicesIBM·Filed 2018·Granted Feb 19, 2019·1 cites·19 claims
- 4475US10453841B2Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junctionIBM·Filed 2016·Granted Oct 22, 2019·1 cites·15 claims
- 4574US11222695B2Socket design for a memory deviceMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 11, 2022·1 cites·29 claims
- 4674US10141308B2Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devicesIBM·Filed 2017·Granted Nov 27, 2018·1 cites·16 claims
- 4774US9929058B2Vertical FETS with variable bottom spacer recessIBM·Filed 2016·Granted Mar 27, 2018·1 cites·9 claims
- 4874US8557649B2Method for controlling structure heightVENIGALLA RAJASEKHAR·Filed 2011·Granted Oct 15, 2013·4 cites·5 claims
- 4974US2025292836A1Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 5073US11961556B2Socket design for a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 16, 2024·0 cites·17 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →