Inventor · disambiguated record
Rekha Rajaram
Also filed as: RAJARAM REKHA
11 granted patents·2 pending applications·79 citations·filing 2011–2017
89Inventor score
Top patents by PatentIndex Score
13 records- 0195US9343372B1Metal stack for reduced gate resistanceGLOBALFOUNDRIES INC·Filed 2014·Granted May 17, 2016·23 cites·20 claims
- 0294US9330938B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2014·Granted May 3, 2016·12 cites·12 claims
- 0394US9063431B2Aqueous cleaner for the removal of post-etch residuesBARNES JEFFREY A·Filed 2011·Granted Jun 23, 2015·20 cites·20 claims
- 0490US9546321B2Compositions and methods for selectively etching titanium nitrideBARNES JEFFREY A·Filed 2012·Granted Jan 17, 2017·11 cites·20 claims
- 0587US9824930B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2016·Granted Nov 21, 2017·3 cites·10 claims
- 0686US10392560B2Compositions and methods for selectively etching titanium nitrideENTEGRIS INC·Filed 2017·Granted Aug 27, 2019·4 cites·17 claims
- 0773US9721842B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2016·Granted Aug 1, 2017·1 cites·12 claims
- 0868US9031700B2Facilities manifold with proximity sensorPAYNE MAKONNEN·Filed 2011·Granted May 12, 2015·4 cites·13 claims
- 0960US10170373B2Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration schemeGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 1, 2019·1 cites·20 claims
- 1057US9472419B2Method of patterning dopant films in high-K dielectrics in a soft mask integration schemeIBM·Filed 2015·Granted Oct 18, 2016·0 cites·10 claims
- 1147US9418995B2Method and structure for transistors using gate stack dopants with minimal nitrogen penetrationGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 16, 2016·0 cites·16 claims
- 1246US2015307818A1Aqueous cleaner for the removal of post-etch residuesADVANCED TECH MATERIALS·Filed 2015·Application pending·0 cites
- 1341US2015162213A1Formulations for wet etching nipt during silicide fabricationADVANCED TECH MATERIALS·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →