Inventor · disambiguated record
Rishikesh Krishnan
Also filed as: KRISHNAN RISHIKESH
46 granted patents·9 pending applications·102 citations·filing 2006–2023
97Inventor score
Top patents by PatentIndex Score
55 records- 0194US11515427B2Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitanceIBM·Filed 2020·Granted Nov 29, 2022·4 cites·13 claims
- 0294US9577100B2FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regionsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 21, 2017·17 cites·13 claims
- 0390US8581351B2Replacement gate with reduced gate leakage currentANDO TAKASHI·Filed 2011·Granted Nov 12, 2013·10 cites·20 claims
- 0488US12278237B2Stacked FETS with non-shared work function metalsIBM·Filed 2021·Granted Apr 15, 2025·1 cites·24 claims
- 0588US10211045B1Microwave annealing of flowable oxides with trap layersGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 19, 2019·5 cites·20 claims
- 0687US11990412B2Buried power rails located in a base layer including first, second, and third etch stop layersIBM·Filed 2021·Granted May 21, 2024·1 cites·6 claims
- 0787US9123826B1Single crystal source-drain merged by polycrystalline materialIBM·Filed 2014·Granted Sep 1, 2015·8 cites·20 claims
- 0884US9318336B2Non-volatile memory structure employing high-k gate dielectric and metal gateBREIL NICOLAS·Filed 2011·Granted Apr 19, 2016·6 cites·19 claims
- 0983US10243077B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2017·Granted Mar 26, 2019·2 cites·10 claims
- 1082US10790198B2Fin structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 29, 2020·3 cites·10 claims
- 1181US8901706B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesCHUDZIK MICHAEL P·Filed 2012·Granted Dec 2, 2014·4 cites·14 claims
- 1280US9917190B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2015·Granted Mar 13, 2018·2 cites·7 claims
- 1380US9312364B2finFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2014·Granted Apr 12, 2016·3 cites·11 claims
- 1480US7560392B2Electrical components for microelectronic devices and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 14, 2009·6 cites·36 claims
- 1577US9373501B2Hydroxyl group termination for nucleation of a dielectric metallic oxideIBM·Filed 2013·Granted Jun 21, 2016·3 cites·20 claims
- 1677US8861179B2Capacitors having dielectric regions that include multiple metal oxide-comprising materialsKRISHNAN RISHIKESH·Filed 2012·Granted Oct 14, 2014·2 cites·33 claims
- 1775US8236372B2Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materialsKRISHNAN RISHIKESH·Filed 2009·Granted Aug 7, 2012·5 cites·25 claims
- 1871US8809176B2Replacement gate with reduced gate leakage currentIBM·Filed 2013·Granted Aug 19, 2014·2 cites·20 claims
- 1969US8310807B2Capacitors having dielectric regions that include multiple metal oxide-comprising materialsKRISHNAN RISHIKESH·Filed 2009·Granted Nov 13, 2012·4 cites·32 claims
- 2068US9653534B2Trench metal-insulator-metal capacitor with oxygen gettering layerIBM·Filed 2014·Granted May 16, 2017·1 cites·8 claims
- 2167US11081583B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2019·Granted Aug 3, 2021·0 cites·10 claims
- 2267US9536985B2Epitaxial growth of material on source/drain regions of FinFET structureGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·2 cites·11 claims
- 2367US8993044B2Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materialsKRISHNAN RISHIKESH·Filed 2012·Granted Mar 31, 2015·2 cites·29 claims
- 2466US8012532B2Methods of making crystalline tantalum pentoxideMICRON TECHNOLOGY INC·Filed 2007·Granted Sep 6, 2011·2 cites·24 claims
- 2566US7968969B2Electrical components for microelectronic devicesMICRON TECHNOLOGY INC·Filed 2009·Granted Jun 28, 2011·2 cites·23 claims
- 2665US12068415B2Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitanceIBM·Filed 2022·Granted Aug 20, 2024·0 cites·11 claims
- 2765US11888048B2Gate oxide for nanosheet transistor devicesIBM·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 2865US9269607B2Wafer stress control with backside patterningGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·1 cites·7 claims
- 2965US8679938B2Shallow trench isolation for device including deep trench capacitorsFANG SUNFEI·Filed 2012·Granted Mar 25, 2014·2 cites·20 claims
- 3065US8241981B1Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitorKRISHNAN RISHIKESH·Filed 2011·Granted Aug 14, 2012·2 cites·17 claims
- 3163US2015001674A1Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising MaterialsMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 3260US2025191966A1Lowering gate aspect ratio on sti regionIBM·Filed 2023·Application pending·0 cites
- 3359US11211474B2Gate oxide for nanosheet transistor devicesIBM·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 3459US9299766B2DT capacitor with silicide outer electrode and/or compressive stress layer, and related methodsIBM·Filed 2014·Granted Mar 29, 2016·0 cites·11 claims
- 3558US9087927B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesIBM·Filed 2014·Granted Jul 21, 2015·0 cites·18 claims
- 3658US2025006788A1Nanosheet height control with dense oxide shallow trench isolationIBM·Filed 2023·Application pending·0 cites
- 3757US10615279B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2016·Granted Apr 7, 2020·0 cites·11 claims
- 3857US9373524B2Die level chemical mechanical polishingIBM·Filed 2014·Granted Jun 21, 2016·0 cites·19 claims
- 3956US9911597B2Trench metal insulator metal capacitor with oxygen gettering layerIBM·Filed 2017·Granted Mar 6, 2018·0 cites·14 claims
- 4056US9653535B2DT capacitor with silicide outer electrode and/or compressive stress layer, and related methodsIBM·Filed 2015·Granted May 16, 2017·0 cites·8 claims
- 4156US9099394B2Non-volatile memory structure employing high-k gate dielectric and metal gateIBM·Filed 2013·Granted Aug 4, 2015·0 cites·20 claims
- 4255US9496329B2DT capacitor with silicide outer electrode and/or compressive stress layer, and related methodsIBM·Filed 2015·Granted Nov 15, 2016·0 cites·4 claims
- 4353US8987863B2Electrical components for microelectronic devices and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 24, 2015·0 cites·14 claims
- 4452US8673390B2Methods of making crystalline tantalum pentoxideBHAT VISHWANATH·Filed 2012·Granted Mar 18, 2014·0 cites·8 claims
- 4552US2014183051A1Deposition of pure metals in 3d structuresIBM·Filed 2013·Application pending·0 cites
- 4650US8282988B2Methods of making crystalline tantalum pentoxideBHAT VISHWANATH·Filed 2011·Granted Oct 9, 2012·0 cites·12 claims
- 4749US9831084B2Hydroxyl group termination for nucleation of a dielectric metallic oxideIBM·Filed 2015·Granted Nov 28, 2017·0 cites·15 claims
- 4849US8450173B2Electrical components for microelectronic devices and methods of forming the sameKRISHNAN RISHIKESH·Filed 2011·Granted May 28, 2013·0 cites·14 claims
- 4948US10886178B2Device with highly active acceptor doping and method of production thereofGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 5, 2021·0 cites·20 claims
- 5047US2015371870A1Die level chemical mechanical polishingIBM·Filed 2015·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →