US2015001674A1PendingUtilityA1

Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising Materials

Assignee: MICRON TECHNOLOGY INCPriority: Jun 12, 2009Filed: Sep 15, 2014Published: Jan 1, 2015
Est. expiryJun 12, 2029(~2.9 yrs left)· nominal 20-yr term from priority
H01G 4/10H10D 1/684H01L 28/56H01L 27/108H10B 12/00
63
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Claims

Abstract

Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10 −7 amps/cm 2 at from −1.1V to +1.1V.

Claims

exact text as granted — not AI-modified
1 - 18 . (canceled) 
     
     
         19 . A capacitor comprising:
 an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and   a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
 an HfO 2 -comprising material outward of the inner electrode, the HfO 2 -comprising material having a thickness of from 10 Angstroms to 50 Angstroms; 
 a TiO 2 -comprising material outward of the HfO 2 -comprising material, the TiO 2 -comprising material having a thickness of from 40 Angstroms to 80 Angstroms; 
 an Al 2 O 3 -comprising material outward of the TiO 2 -comprising material, the Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms; and 
 the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7  amps/cm 2  at from −1.1V to +1.1V. 
   
     
     
         20 . The capacitor of  claim 19  wherein the HfO 2 -comprising material is in direct physical touching contact with the inner electrode. 
     
     
         21 . The capacitor of  claim 19  wherein the TiO 2 -comprising material is in direct physical touching contact with the HfO 2 -comprising material. 
     
     
         22 . The capacitor of  claim 19  wherein the TiO 2 -comprising material is not in direct physical touching contact with the HfO 2 -comprising material. 
     
     
         23 . The capacitor of  claim 22  comprising a Hf x Ti y O z -comprising material received between the TiO 2 -comprising material and the HfO 2 -comprising material, the TiO 2 -comprising material and the HfO 2 -comprising material being in direct physical touching contact with the Hf x Ti y O-comprising material. 
     
     
         24 - 26 . (canceled) 
     
     
         27 . A capacitor comprising:
 an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and   a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
 a first Al 2 O 3 -comprising material outward of the inner electrode, the first Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms; 
 a ZrO 2 -comprising material outward of the first Al 2 O 3 -comprising material, the ZrO 2 -comprising material having a thickness of from 30 Angstroms to 70 Angstroms; 
 a TiO 2 -comprising material outward of the ZrO 2 -comprising material, the TiO 2 -comprising material having a thickness of from 40 Angstroms to 80 Angstroms; 
 a second Al 2 O 3 -comprising material outward of the TiO 2 -comprising material, the second Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms; and 
 the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7  amps/cm 2  at from −1.1V to +1.1V. 
   
     
     
         28 . A capacitor comprising:
 an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and   a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
 a first Al 2 O 3 -comprising material outward of the inner electrode, the first Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms; 
 a ZrO 2 -comprising material outward of the first Al 2 O 3 -comprising material, the ZrO 2 -comprising material having a thickness of from 30 Angstroms to 70 Angstroms; 
 a second Al 2 O 3 -comprising material outward of the ZrO 2 -comprising material, the second Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 16 Angstroms; 
 a Ti x M y O z -comprising material outward of the second Al 2 O 3 -comprising material, where M is at least one of Zr, Hf, Ta, Si, Nb, or Al; the Ti x M y O z -comprising material having a thickness from 5 Angstroms to 100 Angstroms; and 
 a sum of the thicknesses of the first Al 2 O 3 -comprising material, the ZrO 2 -comprising material, and the second Al 2 O 3 -comprising material totals no more than 70 Angstroms; the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7  amps/cm 2  at from −1.1V to +1.1V. 
   
     
     
         29 . A capacitor comprising:
 an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and   a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
 a Ti x M y O z -comprising material outward of the inner electrode, where M is at least one of Zr, Hf, Ta, Si, Nb, or Al; the Ti x M y O z -comprising material having a thickness from 5 Angstroms to 100 Angstroms; 
 a TiO 2 -comprising material outward of the Ti x M y O z -comprising material, the TiO 2 -comprising material having a thickness of from 40 Angstroms to 80 Angstroms; and 
   the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7  amps/cm 2  at from −1.1V to +1.1V.   
     
     
         30 - 44 . (canceled) 
     
     
         45 . A capacitor comprising:
 an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and   a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
 an optional first Al 2 O 3 -comprising material outward of the inner electrode, the optional first Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 2 Angstroms; 
 an Al x Zr y O z -comprising material outward of the inner electrode and outward of the optional first Al 2 O 3 -comprising material if the optional first Al 2 O 3 -comprising material is present, the Al x Zr y O z -comprising material having a thickness of from 2 Angstroms to 30 Angstroms; 
 an optional second Al 2 O 3 -comprising material outward of the Al x Zr y O z -comprising material, the optional second Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 10 Angstroms; 
 a first material outward of the Al x Zr y O z -comprising material and outward of the optional second Al 2 O 3 -comprising material if the optional second Al 2 O 3 -comprising material is present, the first material comprising at least one of ZrO 2  or Ti x Zr y O z  or Zr a Ti x Al y O z , the first material having a thickness of from 30 Angstroms to 60 Angstroms; 
 an optional third Al 2 O 3 -comprising material outward of the first material comprising at least one of ZrO 2  or Ti x Zr y O z  or Zr a Ti x Al y O z , the optional third Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 4 Angstroms; 
 a second material outward of the first material comprising at least one of ZrO 2  or Ti x Zr y O z  or Zr a Ti x Al y O z  and outward of the optional third Al 2 O 3 -comprising material if the optional third Al 2 O 3 -comprising material is present, the second material comprising at least one of TiO 2  or Ti x Zr y O z  or Zr a Ti x Al y O z , the second material having a thickness of from 10 Angstroms to 70 Angstroms; 
 an optional fourth Al 2 O 3 -comprising material outward of the second material comprising at least one of TiO 2  or Ti x Zr y O z  or Zr a Ti x Al y O z , the optional fourth Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 4 Angstroms; and 
 the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7  amps/cm 2  at from −1.1V to +1.1V. 
   
     
     
         46 . The capacitor of  claim 45  wherein the first material comprises ZrO 2 . 
     
     
         47 . The capacitor of  claim 45  wherein the first material comprises Ti x Zr y O z . 
     
     
         48 . The capacitor of  claim 45  wherein the first material comprises Zr a Ti x Al y O z . 
     
     
         49 . The capacitor of  claim 45  wherein the second material comprises TiO 2 . 
     
     
         50 . The capacitor of  claim 45  wherein the second material comprises Ti x Zr y O z . 
     
     
         51 . The capacitor of  claim 45  wherein the second material comprises Zr a Ti x Al y O z . 
     
     
         52 . The capacitor of  claim 19  wherein the capacitor dielectric region has a dielectric constant k of at least 40. 
     
     
         53 . The capacitor of  claim 19  wherein the capacitor dielectric region has leakage current no greater than 5×10 −8  amps/cm 2  at from −1.1V to +1.1V. 
     
     
         54 . The capacitor of  claim 19  wherein the capacitor dielectric region has a dielectric constant k of at least 40 and has leakage current no greater than 5×10 −8  amps/cm 2  at from −1.1V to +1.1V.

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