Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising Materials
Abstract
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10 −7 amps/cm 2 at from −1.1V to +1.1V.
Claims
exact text as granted — not AI-modified1 - 18 . (canceled)
19 . A capacitor comprising:
an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
an HfO 2 -comprising material outward of the inner electrode, the HfO 2 -comprising material having a thickness of from 10 Angstroms to 50 Angstroms;
a TiO 2 -comprising material outward of the HfO 2 -comprising material, the TiO 2 -comprising material having a thickness of from 40 Angstroms to 80 Angstroms;
an Al 2 O 3 -comprising material outward of the TiO 2 -comprising material, the Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms; and
the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7 amps/cm 2 at from −1.1V to +1.1V.
20 . The capacitor of claim 19 wherein the HfO 2 -comprising material is in direct physical touching contact with the inner electrode.
21 . The capacitor of claim 19 wherein the TiO 2 -comprising material is in direct physical touching contact with the HfO 2 -comprising material.
22 . The capacitor of claim 19 wherein the TiO 2 -comprising material is not in direct physical touching contact with the HfO 2 -comprising material.
23 . The capacitor of claim 22 comprising a Hf x Ti y O z -comprising material received between the TiO 2 -comprising material and the HfO 2 -comprising material, the TiO 2 -comprising material and the HfO 2 -comprising material being in direct physical touching contact with the Hf x Ti y O-comprising material.
24 - 26 . (canceled)
27 . A capacitor comprising:
an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
a first Al 2 O 3 -comprising material outward of the inner electrode, the first Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms;
a ZrO 2 -comprising material outward of the first Al 2 O 3 -comprising material, the ZrO 2 -comprising material having a thickness of from 30 Angstroms to 70 Angstroms;
a TiO 2 -comprising material outward of the ZrO 2 -comprising material, the TiO 2 -comprising material having a thickness of from 40 Angstroms to 80 Angstroms;
a second Al 2 O 3 -comprising material outward of the TiO 2 -comprising material, the second Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms; and
the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7 amps/cm 2 at from −1.1V to +1.1V.
28 . A capacitor comprising:
an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
a first Al 2 O 3 -comprising material outward of the inner electrode, the first Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 10 Angstroms;
a ZrO 2 -comprising material outward of the first Al 2 O 3 -comprising material, the ZrO 2 -comprising material having a thickness of from 30 Angstroms to 70 Angstroms;
a second Al 2 O 3 -comprising material outward of the ZrO 2 -comprising material, the second Al 2 O 3 -comprising material having a thickness of from 2 Angstroms to 16 Angstroms;
a Ti x M y O z -comprising material outward of the second Al 2 O 3 -comprising material, where M is at least one of Zr, Hf, Ta, Si, Nb, or Al; the Ti x M y O z -comprising material having a thickness from 5 Angstroms to 100 Angstroms; and
a sum of the thicknesses of the first Al 2 O 3 -comprising material, the ZrO 2 -comprising material, and the second Al 2 O 3 -comprising material totals no more than 70 Angstroms; the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7 amps/cm 2 at from −1.1V to +1.1V.
29 . A capacitor comprising:
an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
a Ti x M y O z -comprising material outward of the inner electrode, where M is at least one of Zr, Hf, Ta, Si, Nb, or Al; the Ti x M y O z -comprising material having a thickness from 5 Angstroms to 100 Angstroms;
a TiO 2 -comprising material outward of the Ti x M y O z -comprising material, the TiO 2 -comprising material having a thickness of from 40 Angstroms to 80 Angstroms; and
the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7 amps/cm 2 at from −1.1V to +1.1V.
30 - 44 . (canceled)
45 . A capacitor comprising:
an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode; and a capacitor dielectric region received between the inner and the outer conductive metal capacitor electrodes and having a thickness no greater than 150 Angstroms, the capacitor dielectric region comprising:
an optional first Al 2 O 3 -comprising material outward of the inner electrode, the optional first Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 2 Angstroms;
an Al x Zr y O z -comprising material outward of the inner electrode and outward of the optional first Al 2 O 3 -comprising material if the optional first Al 2 O 3 -comprising material is present, the Al x Zr y O z -comprising material having a thickness of from 2 Angstroms to 30 Angstroms;
an optional second Al 2 O 3 -comprising material outward of the Al x Zr y O z -comprising material, the optional second Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 10 Angstroms;
a first material outward of the Al x Zr y O z -comprising material and outward of the optional second Al 2 O 3 -comprising material if the optional second Al 2 O 3 -comprising material is present, the first material comprising at least one of ZrO 2 or Ti x Zr y O z or Zr a Ti x Al y O z , the first material having a thickness of from 30 Angstroms to 60 Angstroms;
an optional third Al 2 O 3 -comprising material outward of the first material comprising at least one of ZrO 2 or Ti x Zr y O z or Zr a Ti x Al y O z , the optional third Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 4 Angstroms;
a second material outward of the first material comprising at least one of ZrO 2 or Ti x Zr y O z or Zr a Ti x Al y O z and outward of the optional third Al 2 O 3 -comprising material if the optional third Al 2 O 3 -comprising material is present, the second material comprising at least one of TiO 2 or Ti x Zr y O z or Zr a Ti x Al y O z , the second material having a thickness of from 10 Angstroms to 70 Angstroms;
an optional fourth Al 2 O 3 -comprising material outward of the second material comprising at least one of TiO 2 or Ti x Zr y O z or Zr a Ti x Al y O z , the optional fourth Al 2 O 3 -comprising material having a thickness of from 0 Angstroms to 4 Angstroms; and
the capacitor dielectric region having in combination a dielectric constant k of at least 35 and leakage current no greater than 1×10 −7 amps/cm 2 at from −1.1V to +1.1V.
46 . The capacitor of claim 45 wherein the first material comprises ZrO 2 .
47 . The capacitor of claim 45 wherein the first material comprises Ti x Zr y O z .
48 . The capacitor of claim 45 wherein the first material comprises Zr a Ti x Al y O z .
49 . The capacitor of claim 45 wherein the second material comprises TiO 2 .
50 . The capacitor of claim 45 wherein the second material comprises Ti x Zr y O z .
51 . The capacitor of claim 45 wherein the second material comprises Zr a Ti x Al y O z .
52 . The capacitor of claim 19 wherein the capacitor dielectric region has a dielectric constant k of at least 40.
53 . The capacitor of claim 19 wherein the capacitor dielectric region has leakage current no greater than 5×10 −8 amps/cm 2 at from −1.1V to +1.1V.
54 . The capacitor of claim 19 wherein the capacitor dielectric region has a dielectric constant k of at least 40 and has leakage current no greater than 5×10 −8 amps/cm 2 at from −1.1V to +1.1V.Join the waitlist — get patent alerts
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