Inventor · disambiguated record
Richard Peter Smith
Also filed as: SMITH RICHARD P · SMITH RICHARD PETER
27 granted patents·2 pending applications·2,255 citations·filing 2001–2013
98Inventor score
Top patents by PatentIndex Score
29 records- 0199US8049252B2Methods of fabricating transistors including dielectrically-supported gate electrodes and related devicesCREE INC·Filed 2010·Granted Nov 1, 2011·124 cites·21 claims
- 0299US6548333B2Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segmentCREE INC·Filed 2001·Granted Apr 15, 2003·408 cites·24 claims
- 0398US7906799B2Nitride-based transistors with a protective layer and a low-damage recessCREE INC·Filed 2006·Granted Mar 15, 2011·122 cites·28 claims
- 0498US7709859B2Cap layers including aluminum nitride for nitride-based transistorsCREE INC·Filed 2007·Granted May 4, 2010·108 cites·18 claims
- 0598US7709269B2Methods of fabricating transistors including dielectrically-supported gate electrodesCREE INC·Filed 2006·Granted May 4, 2010·128 cites·24 claims
- 0698US7550784B2Nitride-based transistors and methods of fabrication thereof using non-etched contact recessesCREE INC·Filed 2005·Granted Jun 23, 2009·75 cites·35 claims
- 0798US7465967B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsCREE INC·Filed 2005·Granted Dec 16, 2008·94 cites·42 claims
- 0898US7045404B2Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereofCREE INC·Filed 2004·Granted May 16, 2006·184 cites·52 claims
- 0998US6982204B2Nitride-based transistors and methods of fabrication thereof using non-etched contact recessesCREE INC·Filed 2003·Granted Jan 3, 2006·205 cites·46 claims
- 1097US7855401B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2007·Granted Dec 21, 2010·97 cites·31 claims
- 1197US7678628B2Methods of fabricating nitride-based transistors with a cap layer and a recessed gateCREE INC·Filed 2007·Granted Mar 16, 2010·73 cites·16 claims
- 1297US7238560B2Methods of fabricating nitride-based transistors with a cap layer and a recessed gateCREE INC·Filed 2004·Granted Jul 3, 2007·145 cites·24 claims
- 1397US6777278B2Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segmentCREE INC·Filed 2003·Granted Aug 17, 2004·146 cites·20 claims
- 1496US7432142B2Methods of fabricating nitride-based transistors having regrown ohmic contact regionsCREE INC·Filed 2004·Granted Oct 7, 2008·116 cites·26 claims
- 1595US7456443B2Transistors having buried n-type and p-type regions beneath the source regionCREE INC·Filed 2004·Granted Nov 25, 2008·80 cites·62 claims
- 1694US7332795B2Dielectric passivation for semiconductor devicesCREE INC·Filed 2004·Granted Feb 19, 2008·94 cites·49 claims
- 1793US7525122B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2005·Granted Apr 28, 2009·22 cites·39 claims
- 1888US7858460B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2009·Granted Dec 28, 2010·10 cites·25 claims
- 1987US9142636B2Methods of fabricating nitride-based transistors with an ETCH stop layerCREE INC·Filed 2013·Granted Sep 22, 2015·9 cites·7 claims
- 2077US9666707B2Nitride-based transistors with a cap layer and a recessed gateSHEPPARD SCOTT·Filed 2010·Granted May 30, 2017·4 cites·14 claims
- 2176US8212289B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsSMITH RICHARD PETER·Filed 2008·Granted Jul 3, 2012·5 cites·20 claims
- 2273US8575651B2Devices having thick semi-insulating epitaxial gallium nitride layerSAXLER ADAM WILLIAM·Filed 2005·Granted Nov 5, 2013·3 cites·84 claims
- 2367US9224596B2Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layersCREE INC·Filed 2013·Granted Dec 29, 2015·1 cites·29 claims
- 2464US8803198B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsSMITH RICHARD PETER·Filed 2012·Granted Aug 12, 2014·1 cites·23 claims
- 2559US9166033B2Methods of passivating surfaces of wide bandgap semiconductor devicesSAXLER ADAM WILLIAM·Filed 2008·Granted Oct 20, 2015·1 cites·37 claims
- 2652US8946777B2Nitride-based transistors having laterally grown active region and methods of fabricating sameSAXLER ADAM WILLIAM·Filed 2009·Granted Feb 3, 2015·0 cites·21 claims
- 2751US11316028B2Nitride-based transistors with a protective layer and a low-damage recessSHEPPARD SCOTT T·Filed 2011·Granted Apr 26, 2022·0 cites·17 claims
- 2842US2007018199A1Nitride-based transistors and fabrication methods with an etch stop layerCREE INC·Filed 2005·Application pending·0 cites
- 2933US2006017064A1Nitride-based transistors having laterally grown active region and methods of fabricating sameSAXLER ADAM W·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →