Inventor · disambiguated record
Richard Westhoff
Also filed as: WESTHOFF RICHARD · WESTHOFF RICHARD C
20 granted patents·2 pending applications·605 citations·filing 1995–2016
96Inventor score
Files withAMBERWAVE SYSTEMS CORP8TAIWAN SEMICONDUCTOR MFG4LAWRENCE SEMICONDUCTOR RESEARC2TOKYO ELECTRON LTD2FITZGERALD EUGENE1
Top patents by PatentIndex Score
22 records- 0197US7049627B2Semiconductor heterostructures and related methodsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 23, 2006·102 cites·21 claims
- 0296US7829442B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 9, 2010·26 cites·16 claims
- 0395US5906708ASilicon-germanium-carbon compositions in selective etch processesLAWRENCE SEMICONDUCTOR RESEARC·Filed 1995·Granted May 25, 1999·172 cites·9 claims
- 0493US6064081ASilicon-germanium-carbon compositions and processes thereofLAWRENCE SEMICONDUCTOR RESEARC·Filed 1998·Granted May 16, 2000·159 cites·6 claims
- 0585US5961877AWet chemical etchantsFiled 1995·Granted Oct 5, 1999·60 cites·7 claims
- 0681US8129747B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsWESTHOFF RICHARD·Filed 2010·Granted Mar 6, 2012·4 cites·17 claims
- 0778US7041170B2Method of producing high quality relaxed silicon germanium layersAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 9, 2006·14 cites·38 claims
- 0876US6482477B1Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers theretoTOKYO ELECTRON LTD·Filed 2000·Granted Nov 19, 2002·20 cites·17 claims
- 0975US7955435B2Method of producing high quality relaxed silicon germanium layersTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jun 7, 2011·2 cites·20 claims
- 1074US8823056B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsLEITZ CHRISTOPHER·Filed 2012·Granted Sep 2, 2014·2 cites·18 claims
- 1174US7375385B2Semiconductor heterostructures having reduced dislocation pile-upsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 20, 2008·9 cites·58 claims
- 1271US7332417B2Semiconductor structures with structural homogeneityAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Feb 19, 2008·13 cites·34 claims
- 1365US7615829B2Elevated source and drain elements for strained-channel heterojuntion field-effect transistorsAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Nov 10, 2009·11 cites·1 claims
- 1463US9309607B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·0 cites·20 claims
- 1562US9934964B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·0 cites·20 claims
- 1659US7594967B2Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxyAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Sep 29, 2009·6 cites·46 claims
- 1756US6632737B1Method for enhancing the adhesion of a barrier layer to a dielectricTOKYO ELECTRON LTD·Filed 2000·Granted Oct 14, 2003·5 cites·86 claims
- 1855US7368308B2Methods of fabricating semiconductor heterostructuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted May 6, 2008·0 cites·25 claims
- 1953US7674335B2Method of producing high quality relaxed silicon germanium layersTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 9, 2010·0 cites·29 claims
- 2053US2008135830A1Semiconductor structures with structural homogeneityAMBERWAVE SYSTEMS CORP·Filed 2007·Application pending·0 cites
- 2147US8187379B2Method of producing high quality relaxed silicon germanium layersFITZGERALD EUGENE·Filed 2011·Granted May 29, 2012·0 cites·20 claims
- 2238US2002081861A1Silicon-germanium-carbon compositions and processes thereofFiled 2001·Application pending·0 cites
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