Inventor · disambiguated record
Robert Hannon
Also filed as: HANNON ROBERT · HANNON ROBERT DOUGLAS
47 granted patents·7 pending applications·860 citations·filing 1994–2016
98Inventor score
Top patents by PatentIndex Score
54 records- 0199US8129256B23D integrated circuit device fabrication with precisely controllable substrate removalFAROOQ MUKTA G·Filed 2008·Granted Mar 6, 2012·254 cites·18 claims
- 0298US7955955B2Using crack arrestor for inhibiting damage from dicing and chip packaging interaction failures in back end of line structuresIBM·Filed 2007·Granted Jun 7, 2011·70 cites·22 claims
- 0395US8492878B2Metal-contamination-free through-substrate via structureFAROOQ MUKTA G·Filed 2010·Granted Jul 23, 2013·21 cites·24 claims
- 0494US8076756B2Structure for inhibiting back end of line damage from dicing and chip packaging interaction failuresLANE MICHAEL W·Filed 2011·Granted Dec 13, 2011·21 cites·20 claims
- 0589US9406561B2Three dimensional integrated circuit integration using dielectric bonding first and through via formation lastFAROOQ MUKTA G·Filed 2009·Granted Aug 2, 2016·19 cites·27 claims
- 0689US8822141B1Front side wafer ID processingIBM·Filed 2013·Granted Sep 2, 2014·10 cites·12 claims
- 0789US8487425B2Optimized annular copper TSVANDRY PAUL S·Filed 2011·Granted Jul 16, 2013·9 cites·15 claims
- 0889US6261876B1Planar mixed SOI-bulk substrate for microelectronic applicationsIBM·Filed 1999·Granted Jul 17, 2001·93 cites·15 claims
- 0988US6096580ALow programming voltage anti-fuseIBM·Filed 1999·Granted Aug 1, 2000·99 cites·15 claims
- 1087US8921198B2Method and structure for forming a deep trench capacitorBOOTH JR ROGER A·Filed 2012·Granted Dec 30, 2014·8 cites·13 claims
- 1187US8546961B2Alignment marks to enable 3D integrationFAROOQ MUKTA G·Filed 2011·Granted Oct 1, 2013·9 cites·19 claims
- 1286US8492869B23D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layerFAROOQ MUKTA G·Filed 2012·Granted Jul 23, 2013·5 cites·20 claims
- 1385US8658535B2Optimized annular copper TSVIBM·Filed 2013·Granted Feb 25, 2014·8 cites·11 claims
- 1484US8298914B23D integrated circuit device fabrication using interface wafer as permanent carrierFAROOQ MUKTA G·Filed 2008·Granted Oct 30, 2012·7 cites·10 claims
- 1584US6670675B2Deep trench body SOI contacts with epitaxial layer formationIBM·Filed 2001·Granted Dec 30, 2003·35 cites·15 claims
- 1684US6297127B1Self-aligned deep trench isolation to shallow trench isolationIBM·Filed 2000·Granted Oct 2, 2001·40 cites·9 claims
- 1783US8022543B2Underbump metallurgy for enhanced electromigration resistanceIBM·Filed 2008·Granted Sep 20, 2011·11 cites·16 claims
- 1881US7375021B2Method and structure for eliminating aluminum terminal pad material in semiconductor devicesIBM·Filed 2006·Granted May 20, 2008·10 cites·8 claims
- 1979US7919356B2Method and structure to reduce cracking in flip chip underfillIBM·Filed 2007·Granted Apr 5, 2011·8 cites·12 claims
- 2078US7566637B2Method of inhibition of metal diffusion arising from laser dicingIBM·Filed 2007·Granted Jul 28, 2009·5 cites·1 claims
- 2176US8679971B2Metal-contamination-free through-substrate via structureIBM·Filed 2013·Granted Mar 25, 2014·3 cites·20 claims
- 2275US8664081B2Method for fabricating 3D integrated circuit device using interface wafer as permanent carrierFAROOQ MUKTA G·Filed 2012·Granted Mar 4, 2014·2 cites·20 claims
- 2370US9642346B2Fishing line guide systemHANNON ROBERT DOUGLAS·Filed 2010·Granted May 9, 2017·3 cites·10 claims
- 2469US8399336B2Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layerFAROOQ MUKTA G·Filed 2008·Granted Mar 19, 2013·2 cites·20 claims
- 2564US8629553B23D integrated circuit device fabrication with precisely controllable substrate removalFAROOQ MUKTA G·Filed 2012·Granted Jan 14, 2014·1 cites·20 claims
- 2663US8455270B23D multiple die stackingFAROOQ MUKTA G·Filed 2009·Granted Jun 4, 2013·1 cites·16 claims
- 2756US5491319ALaser ablation apparatus and methodIBM·Filed 1994·Granted Feb 13, 1996·15 cites·4 claims
- 2855US8962448B2Computer readable medium encoded with a program for fabricating 3D integrated circuit device using interface wafer as permanent carrierFAROOQ MUKTA G·Filed 2012·Granted Feb 24, 2015·0 cites·20 claims
- 2954US7674690B2Inhibition of metal diffusion arising from laser dicingIBM·Filed 2008·Granted Mar 9, 2010·0 cites·20 claims
- 3053US8738167B23D integrated circuit device fabrication with precisely controllable substrate removalFAROOQ MUKTA G·Filed 2012·Granted May 27, 2014·0 cites·19 claims
- 3153US2013189813A1Computer readable medium encoded with a program for fabricating a 3d integrated circuit structureIBM·Filed 2013·Application pending·0 cites
- 3251US2010200949A1Method for tuning the threshold voltage of a metal gate and high-k deviceIBM·Filed 2009·Application pending·0 cites
- 3349US6486043B1Method of forming dislocation filter in merged SOI and non-SOI chipsIBM·Filed 2000·Granted Nov 26, 2002·4 cites·9 claims
- 3449US5904868AMounting and/or removing of components using optical fiber toolsIBM·Filed 1997·Granted May 18, 1999·13 cites·60 claims
- 3547US5763093AAluminum nitride body having graded metallurgyIBM·Filed 1996·Granted Jun 9, 1998·10 cites·11 claims
- 3646US6200234B1Portable soccer golf gameFiled 1999·Granted Mar 13, 2001·17 cites·20 claims
- 3745US8372725B2Structures and methods of forming pre fabricated deep trench capacitors for SOI substratesIBM·Filed 2010·Granted Feb 12, 2013·0 cites·21 claims
- 3845US5682589AAluminum nitride body having graded metallurgyIBM·Filed 1996·Granted Oct 28, 1997·9 cites·12 claims
- 3945US5552107AAluminum nitride body having graded metallurgyIBM·Filed 1995·Granted Sep 3, 1996·9 cites·6 claims
- 4044US5932043AMethod for flat firing aluminum nitride/tungsten electronic modulesIBM·Filed 1997·Granted Aug 3, 1999·12 cites·53 claims
- 4143US10170337B2Implant after through-silicon via (TSV) etch to getter mobile ionsIBM·Filed 2016·Granted Jan 1, 2019·0 cites·14 claims
- 4243US2008038913A1Methods of forming aluminum-free wire bond pad and pad so formedIBM·Filed 2006·Application pending·0 cites
- 4342US2007187828A1Ild layer with intermediate dielectric constant material immediately below silicon dioxide based ild layerIBM·Filed 2006·Application pending·0 cites
- 4442US2008029898A1Via stack structuresFAROOQ MUKTA G·Filed 2006·Application pending·0 cites
- 4541US2008057677A1Chip location identificationIBM·Filed 2006·Application pending·0 cites
- 4638US2001034086A1Planar mixed SOI-bulk substrate for microelectronic applicationsFiled 2001·Application pending·0 cites
- 4737US6004624AMethod for the controlling of certain second phases in aluminum nitrideIBM·Filed 1997·Granted Dec 21, 1999·5 cites·6 claims
- 4834USD685056SFishing line guideHANNON ROBERT DOUGLAS·Filed 2012·Granted Jun 25, 2013·2 cites·1 claims
- 4934US6200373B1Method for controlling of certain second phases in aluminum nitrideIBM·Filed 1999·Granted Mar 13, 2001·3 cites·9 claims
- 5034US5552232AAluminum nitride body having graded metallurgyIBM·Filed 1994·Granted Sep 3, 1996·4 cites·10 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →