Inventor · disambiguated record
Robert H. Havemann
Also filed as: HAVEMANN ROBERT H
78 granted patents·2 pending applications·3,771 citations·filing 1984–2007
99Inventor score
Top patents by PatentIndex Score
80 records- 0199US4958213AMethod for forming a transistor base region under thick oxideTEXAS INSTRUMENTS INC·Filed 1989·Granted Sep 18, 1990·269 cites·11 claims
- 0298US5461003AMultilevel interconnect structure with air gaps formed between metal leadsTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 24, 1995·427 cites·20 claims
- 0397US6844258B1Selective refractory metal and nitride cappingNOVELLUS SYSTEMS INC·Filed 2003·Granted Jan 18, 2005·260 cites·55 claims
- 0495US7994640B1Nanoparticle cap layerNOVELLUS SYSTEMS INC·Filed 2007·Granted Aug 9, 2011·28 cites·17 claims
- 0595US6753250B1Method of fabricating low dielectric constant dielectric filmsNOVELLUS SYSTEMS INC·Filed 2002·Granted Jun 22, 2004·103 cites·48 claims
- 0693US7157798B1Selective refractory metal and nitride cappingNOVELLUS SYSTEMS INC·Filed 2004·Granted Jan 2, 2007·68 cites·13 claims
- 0793US5668398AMultilevel interconnect structure with air gaps formed between metal leadsTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 16, 1997·106 cites·8 claims
- 0893US5488015AMethod of making an interconnect structure with an integrated low density dielectricTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 30, 1996·148 cites·9 claims
- 0992US6995439B1Method of fabricating low dielectric constant dielectric filmsNOVELLUS SYSTEMS INC·Filed 2004·Granted Feb 7, 2006·62 cites·9 claims
- 1092US6355559B1Passivation of inlaid metallizationTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 12, 2002·73 cites·9 claims
- 1192US5661344APorous dielectric material with a passivation layer for electronics applicationsTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 26, 1997·113 cites·9 claims
- 1292US5482894AMethod of fabricating a self-aligned contact using organic dielectric materialsTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 9, 1996·135 cites·11 claims
- 1391US8039379B1Nanoparticle cap layerNOVELLUS SYSTEMS INC·Filed 2007·Granted Oct 18, 2011·23 cites·23 claims
- 1491US5252502AMethod of making MOS VLSI semiconductor device with metal gateTEXAS INSTRUMENTS INC·Filed 1992·Granted Oct 12, 1993·92 cites·15 claims
- 1589US4788160AProcess for formation of shallow silicided junctionsTEXAS INSTRUMENTS INC·Filed 1987·Granted Nov 29, 1988·92 cites·28 claims
- 1688US5936295AMultilevel interconnect structure with air gaps formed between metal leadsTEXAS INSTRUMENTS INC·Filed 1997·Granted Aug 10, 1999·70 cites·3 claims
- 1787US5472913AMethod of fabricating porous dielectric material with a passivation layer for electronics applicationsTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 5, 1995·88 cites·13 claims
- 1887US4835580ASchottky barrier diode and methodTEXAS INSTRUMENTS INC·Filed 1987·Granted May 30, 1989·53 cites·6 claims
- 1986US6130156AVariable doping of metal plugs for enhanced reliabilityTEXAS INSTRUMENTS INC·Filed 1999·Granted Oct 10, 2000·87 cites·38 claims
- 2086US5565384ASelf-aligned via using low permittivity dielectricTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 15, 1996·94 cites·20 claims
- 2185US5891804AProcess for conductors with selective depositionTEXAS INSTRUMENTS INC·Filed 1997·Granted Apr 6, 1999·77 cites·16 claims
- 2285US5789319AMethod of dual masking for selective gap fill of submicron interconnectsTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 4, 1998·71 cites·11 claims
- 2384US6278174B1Integrated circuit insulator and structure using low dielectric insulator material including HSQ and fluorinated oxideTEXAS INSTRUMENTS INC·Filed 1997·Granted Aug 21, 2001·71 cites·9 claims
- 2484US6156651AMetallization method for porous dielectricsTEXAS INSTRUMENTS INC·Filed 1997·Granted Dec 5, 2000·72 cites·100 claims
- 2584US5747880AInterconnect structure with an integrated low density dielectricTEXAS INSTRUMENTS INC·Filed 1996·Granted May 5, 1998·63 cites·12 claims
- 2683US6873026B1Inhomogeneous materials having physical properties decoupled from desired functionsNOVELLUS SYSTEMS INC·Filed 2002·Granted Mar 29, 2005·33 cites·23 claims
- 2782US6358849B1Integrated circuit interconnect and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 19, 2002·66 cites·5 claims
- 2879US6589865B2Low pressure, low temperature, semiconductor gap filling processTEXAS INSTRUMENTS INC·Filed 2001·Granted Jul 8, 2003·23 cites·12 claims
- 2979US5403759AMethod of making thin film transistor and a silicide local interconnectTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 4, 1995·52 cites·6 claims
- 3076US6365451B2Transistor and methodTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 2, 2002·18 cites·8 claims
- 3175US5465005APolysilicon resistor structure including polysilicon contactsTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 7, 1995·28 cites·7 claims
- 3274US4541167AMethod for integrated circuit device isolationTEXAS INSTRUMENTS INC·Filed 1984·Granted Sep 17, 1985·34 cites·3 claims
- 3373US5668411ADiffusion barrier trilayer for minimizing reaction between metallization layers of integrated circuitsTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 16, 1997·43 cites·15 claims
- 3472US5789818AStructure with selective gap fill of submicron interconnectsTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 4, 1998·33 cites·4 claims
- 3570US5124271AProcess for fabricating a BiCMOS integrated circuitTEXAS INSTRUMENTS INC·Filed 1991·Granted Jun 23, 1992·26 cites·4 claims
- 3670US4774204AMethod for forming self-aligned emitters and bases and source/drains in an integrated circuitTEXAS INSTRUMENTS INC·Filed 1987·Granted Sep 27, 1988·36 cites·22 claims
- 3768US5236857AResistor structure and processTEXAS INSTRUMENTS INC·Filed 1991·Granted Aug 17, 1993·22 cites·20 claims
- 3868US5003365ABipolar transistor with a sidewall-diffused subcollectorTEXAS INSTRUMENTS INC·Filed 1990·Granted Mar 26, 1991·41 cites·29 claims
- 3968US4703554ATechnique for fabricating a sidewall base contact with extrinsic base-on-insulatorTEXAS INSTRUMENTS INC·Filed 1986·Granted Nov 3, 1987·24 cites·21 claims
- 4067US6261915B1Process of making polysilicon resistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 17, 2001·21 cites·21 claims
- 4165US5468662AMethod of making thin film transistor and a silicide local interconnectTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 21, 1995·29 cites·11 claims
- 4264US6753563B2Integrated circuit having a doped porous dielectric and method of manufacturing the sameTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 22, 2004·7 cites·15 claims
- 4363US4706378AMethod of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantationTEXAS INSTRUMENTS INC·Filed 1985·Granted Nov 17, 1987·28 cites·22 claims
- 4462US6566211B2Surface modified interconnectsTEXAS INSTRUMENTS INC·Filed 2001·Granted May 20, 2003·8 cites·8 claims
- 4562US4816423ABicmos process for forming shallow npn emitters and mosfet source/drainsTEXAS INSTRUMENTS INC·Filed 1987·Granted Mar 28, 1989·28 cites·18 claims
- 4661US6333265B1Low pressure, low temperature, semiconductor gap filling processTEXAS INSTRUMENTS INC·Filed 1996·Granted Dec 25, 2001·22 cites·4 claims
- 4761US5374845AProcess for reduced emitter-base capacitance in bipolar transistorTEXAS INSTRUMENTS INC·Filed 1992·Granted Dec 20, 1994·17 cites·4 claims
- 4860US6077782AMethod to improve the texture of aluminum metallizationTEXAS INSTRUMENTS INC·Filed 1998·Granted Jun 20, 2000·25 cites·14 claims
- 4958US5451530AMethod for forming integrated circuits having buried doped regionsTEXAS INSTRUMENTS INC·Filed 1994·Granted Sep 19, 1995·26 cites·29 claims
- 5058US4597164ATrench isolation process for integrated circuit devicesTEXAS INSTRUMENTS INC·Filed 1984·Granted Jul 1, 1986·19 cites·11 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →