Inventor · disambiguated record
Rodney S. Ridley
Also filed as: RIDLEY RODNEY · RIDLEY RODNEY S · RIDLEY SR RODNEY S · RIDLEY SR RODNEY SYLVESTER
27 granted patents·4 pending applications·1,284 citations·filing 1998–2013
98Inventor score
Top patents by PatentIndex Score
31 records- 0198US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0298US7476589B2Methods for forming shielded gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jan 13, 2009·71 cites·18 claims
- 0398US7449354B2Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etchFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Nov 11, 2008·99 cites·39 claims
- 0498US6399022B1Simplified ozonator for a semiconductor wafer cleanerFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Jun 4, 2002·350 cites·28 claims
- 0596US8803207B2Shielded gate field effect transistorsGREBS THOMAS E·Filed 2011·Granted Aug 12, 2014·26 cites·20 claims
- 0696US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 0795US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 0895US6433385B1MOS-gated power device having segmented trench and extended doping zone and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Aug 13, 2002·119 cites·17 claims
- 0994US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 1094US6465325B2Process for depositing and planarizing BPSG for dense trench MOSFET applicationFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Oct 15, 2002·127 cites·17 claims
- 1193US8143123B2Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devicesGREBS THOMAS E·Filed 2008·Granted Mar 27, 2012·15 cites·19 claims
- 1293US6673681B2Process for forming MOS-gated power device having segmented trench and extended doping zoneFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jan 6, 2004·79 cites·13 claims
- 1390US8772868B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Jul 8, 2014·12 cites·20 claims
- 1490US6818947B2Buried gate-field termination structureFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Nov 16, 2004·63 cites·10 claims
- 1589US7935577B2Method for forming shielded gate field effect transistor using spacersFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted May 3, 2011·10 cites·10 claims
- 1686US8884365B2Trench-gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 11, 2014·4 cites·20 claims
- 1786US8461040B2Method of forming shielded gate power transistor utilizing chemical mechanical planarizationGREBS THOMAS E·Filed 2011·Granted Jun 11, 2013·5 cites·14 claims
- 1882US6635535B2Dense trench MOSFET with decreased etch sensitivity to deposition and etch processingFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Oct 21, 2003·28 cites·3 claims
- 1981US6573569B2Trench MOSFET with low gate chargeFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jun 3, 2003·35 cites·29 claims
- 2078US8441069B2Structure and method for forming trench-gate field effect transistor with source plugYILMAZ HAMZA·Filed 2011·Granted May 14, 2013·2 cites·20 claims
- 2178US6602768B2MOS-gated power device with doped polysilicon body and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Aug 5, 2003·19 cites·10 claims
- 2273US7436021B2Dense trench MOSFET with decreased etch sensitivity to deposition and etch processingFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Oct 14, 2008·16 cites·7 claims
- 2373US6365942B1MOS-gated power device with doped polysilicon body and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Apr 2, 2002·14 cites·11 claims
- 2469US6367493B2Potted transducer array with matching network in a multiple pass configurationFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Apr 9, 2002·11 cites·5 claims
- 2559US2009230465A1Trench-Gate Field Effect Transistors and Methods of Forming the SameYILMAZ HAMZA·Filed 2009·Application pending·0 cites
- 2644US6211550B1Backmetal drain terminal with low stress and thermal resistanceINTERSIL CORP·Filed 1999·Granted Apr 3, 2001·9 cites·14 claims
- 2743US6314974B1Potted transducer array with matching network in a multiple pass configurationFAIRCHILD SEMICONDUCTOR·Filed 1999·Granted Nov 13, 2001·9 cites·15 claims
- 2842US2012273916A1Superjunction Structures for Power Devices and Methods of ManufactureYEDINAK JOSEPH A·Filed 2011·Application pending·0 cites
- 2937US2002175383A1MOS-gated power device with doped polysilicon body and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2001·Application pending·0 cites
- 3037US2002038662A1Potted transducer array with matching network in a multiple pass configurationINTERSIL CORP·Filed 2001·Application pending·0 cites
- 3132US6309952B1Process for forming high voltage junction termination extension oxideFAIRCHILD SEMICONDUCTOR·Filed 1998·Granted Oct 30, 2001·5 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →