Superjunction Structures for Power Devices and Methods of Manufacture

Abstract

A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

1 - 162 . (canceled) 
     
     
         163 . A high voltage device comprising:
 one or more N-type epitaxial layers extending over a substrate;   a plurality of trenches extending into the one or more N-type epitaxial layers, the plurality of trenches being filled with P-type silicon material, the P-type silicon material in the plurality of trenches forming P-pillars, those portions of the one or more N-type epitaxial layers separating the P-pillars forming N-pillars such that the N-pillars and the P-pillars form alternating P-N-pillars;   a plurality of P-wells each formed in an upper portion of one of the P-pillars; and   an anode terminal comprising a Schottky barrier metal directly contacting a top surface of the N-pillars to form a Schottky contact therebetween, the Schottky barrier metal further directly contacting the P-wells.   
     
     
         164 . The high voltage device of  claim 163  wherein each P-well has a width greater than a width of the P-pillars. 
     
     
         165 . The high voltage device of  claim 163  wherein each P-well has a width substantially equal to a width of the P-pillars. 
     
     
         166 . The high voltage device of  claim 163  wherein each P-well includes a highly doped P+ region, the Schottky barrier metal direction contacting a top surface of the P+ regions to form ohmic contact therebetween. 
     
     
         167 . The high voltage device of  claim 163  wherein the Schottky contacts are formed in a Schottky region of the high voltage device, the high voltage device further comprising a MOSFET region configured to include a MOSFET. 
     
     
         168 . A high voltage device comprising:
 one or more N-type epitaxial layers extending over a substrate;   a plurality of trenches extending into the one or more N-type epitaxial layers, the plurality of trenches being filled with P-type silicon material, the P-type silicon material in the plurality of trenches forming P-pillars, those portions of the one or more N-type epitaxial layers separating the P-pillars forming N-pillars such that the N-pillars and the P-pillars form alternating P-N pillars;   an N-type epitaxial layer extending over the alternating P-N Pillars; and   an anode terminal comprising a Schottky barrier metal directly contacting a top surface of the N-type epitaxial layer to form a Schottky contact therebetween, the N-type epitaxial layer separating the Schottky barrier metal from the P-pillars so that the P-pillars float.   
     
     
         169 . The high voltage device of  claim 168  wherein the Schottky contact is formed in a Schottky region of the high voltage device, the high voltage device further comprising a MOSFET region configured to include a MOSFET. 
     
     
         170 . A high voltage device comprising:
 one or more N-type epitaxial layers extending over a substrate;   a plurality of trenches extending into the one or more N-type epitaxial layers, the plurality of trenches being filled with P-type silicon material, the P-type silicon material in the plurality of trenches forming P-pillars, those portions of the one or more N-type epitaxial layers separating the P-pillars forming N-pillars such that the N-pillars and the P-pillars form alternating P-N pillars;   an N-type implant region extending through an upper portion of the alternating P-N pillars; and   an anode terminal comprising a Schottky barrier metal directly contacting a top surface of the N-type implant region to form a Schottky contact therebetween, the N-type implant region separating the Schottky barrier metal from the P-pillars so that the P-pillars float.   
     
     
         171 . The high voltage device of  claim 170  wherein the Schottky contact is formed in a Schottky region of the high voltage device, the high voltage device further comprising a MOSFET region configured to include a MOSFET.