Inventor · disambiguated record
Ronald Stevens
Also filed as: STEVENS RONALD · STEVENS RONALD P
5 granted patents·15 pending applications·295 citations·filing 2006–2013
83Inventor score
Top patents by PatentIndex Score
20 records- 0197US7976631B2Multi-gas straight channel showerheadAPPLIED MATERIALS INC·Filed 2007·Granted Jul 12, 2011·247 cites·25 claims
- 0293US7674352B2System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Mar 9, 2010·25 cites·5 claims
- 0387US8481118B2Multi-gas straight channel showerheadBURROWS BRIAN H·Filed 2011·Granted Jul 9, 2013·14 cites·9 claims
- 0483US9644267B2Multi-gas straight channel showerheadAPPLIED MATERIALS INC·Filed 2013·Granted May 9, 2017·6 cites·20 claims
- 0578US7781016B2Method for measuring precursor amounts in bubbler sourcesAPPLIED MATERIALS INC·Filed 2006·Granted Aug 24, 2010·3 cites·21 claims
- 0652US2009095221A1Multi-gas concentric injection showerheadTAM ALEXANDER·Filed 2007·Application pending·0 cites
- 0752US2010215854A1Hvpe showerhead designBURROWS BRIAN H·Filed 2010·Application pending·0 cites
- 0851US2007256635A1UV activation of NH3 for III-N depositionAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 0950US2008289575A1Methods and apparatus for depositing a group iii-v film using a hydride vapor phase epitaxy processBURROWS BRIAN H·Filed 2007·Application pending·0 cites
- 1050US2008314317A1Showerhead design with precursor pre-mixingBURROWS BRIAN H·Filed 2007·Application pending·0 cites
- 1150US2008276860A1Cross flow apparatus and method for hydride vapor phase depositionBURROWS BRIAN H·Filed 2007·Application pending·0 cites
- 1248US2007240631A1Epitaxial growth of compound nitride semiconductor structuresAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1347US2011076400A1Nanocrystalline diamond-structured carbon coating of silicon carbideAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 1447US2008314311A1Hvpe showerhead designBURROWS BRIAN H·Filed 2007·Application pending·0 cites
- 1546US2011308453A1Closed loop mocvd deposition controlSU JIE·Filed 2009·Application pending·0 cites
- 1646US2011070721A1Epitaxial growth of compound nitride semiconductor structuresAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 1745US2009194024A1Cvd apparatusAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 1842US2009194026A1Processing system for fabricating compound nitride semiconductor devicesBURROWS BRIAN H·Filed 2008·Application pending·0 cites
- 1941US2008124453A1In-situ detection of gas-phase particle formation in nitride film depositionAPPLIED MATRIALS INC·Filed 2006·Application pending·0 cites
- 2036US2011121503A1Cvd apparatusAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →