Inventor · disambiguated record
Rong Tao
Also filed as: TAO RONG
17 granted patents·13 pending applications·611 citations·filing 1997–2022
94Inventor score
Top patents by PatentIndex Score
30 records- 0194US5989623ADual damascene metallizationAPPLIED MATERIALS INC·Filed 1997·Granted Nov 23, 1999·146 cites·26 claims
- 0292US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 0392US6207222B1Dual damascene metallizationAPPLIED MATERIALS INC·Filed 1999·Granted Mar 27, 2001·120 cites·6 claims
- 0491US6627542B1Continuous, non-agglomerated adhesion of a seed layer to a barrier layerAPPLIED MATERIALS INC·Filed 2000·Granted Sep 30, 2003·64 cites·42 claims
- 0591US6139697ALow temperature integrated via and trench fill process and apparatusAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·117 cites·18 claims
- 0690US6610184B2Magnet array in conjunction with rotating magnetron for plasma sputteringAPPLIED MATERIALS INC·Filed 2001·Granted Aug 26, 2003·44 cites·15 claims
- 0786US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 0884US8500963B2Sputtering of thermally resistive materials including metal chalcogenidesYE MENGQI·Filed 2007·Granted Aug 6, 2013·7 cites·17 claims
- 0984US6875321B2Auxiliary magnet array in conjunction with magnetron sputteringAPPLIED MATERIALS INC·Filed 2003·Granted Apr 5, 2005·26 cites·20 claims
- 1078US11075165B2Methods and apparatus for forming dual metal interconnectsAPPLIED MATERIALS INC·Filed 2019·Granted Jul 27, 2021·2 cites·18 claims
- 1178US2022310363A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1277US8696875B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2002·Granted Apr 15, 2014·15 cites·61 claims
- 1377US6200433B1IMP technology with heavy gas sputteringAPPLIED MATERIALS INC·Filed 1999·Granted Mar 13, 2001·45 cites·10 claims
- 1474US2022310364A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1570US2021319989A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 1664US11948885B2Methods and apparatus for forming dual metal interconnectsAPPLIED MATERIALS INC·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 1758US2015136732A1Method and apparatus for film depositionAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 1857US2009233438A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 1956US8293647B2Bottom up plating by organic surface passivation and differential plating retardationWANG JENN-YUE·Filed 2009·Granted Oct 23, 2012·1 cites·17 claims
- 2055US2009107834A1Chalcogenide target and methodAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2153US2018327893A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 2251US2005255691A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2350US2006271867A1Mobile communications terminal and method thereforeWANG KONG Q·Filed 2005·Application pending·0 cites
- 2448US10304732B2Methods and apparatus for filling substrate features with cobaltAPPLIED MATERIALS INC·Filed 2017·Granted May 28, 2019·0 cites·17 claims
- 2545US2022223472A1Ruthenium Reflow For Via FillAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 2644US2014374907A1Ultra-thin copper seed layer for electroplating into small featuresAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2742US8993434B2Methods for forming layers on a substrateYU JICK M·Filed 2011·Granted Mar 31, 2015·0 cites·19 claims
- 2841US2013341794A1Ultra-thin copper seed layer for electroplating into small featuresYU JICK M·Filed 2013·Application pending·0 cites
- 2940US10014179B2Methods for forming cobalt-copper selective fill for an interconnectAPPLIED MATERIALS INC·Filed 2016·Granted Jul 3, 2018·0 cites·22 claims
- 3040US2002144889A1Burn-in process for high density plasma PVD chamberAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →