Inventor · disambiguated record
Ryuichi Hirano
Also filed as: HIRANO RYUICHI
28 granted patents·2 pending applications·71 citations·filing 1993–2023
94Inventor score
Files withNIPPON MINING CO8OLYMPUS CORP6JX NIPPON MINING & METALS CORP4JAPAN ENERGY CORP2JX METALS CORP2
Top patents by PatentIndex Score
30 records- 0186US9362431B2Compound semiconductor single crystal ingot for photoelectric conversion devices, photoelectric conversion device, and production method for compound semiconductor single crystal ingot for photoelectric conversion devicesJX NIPPON MINING & METALS CORP·Filed 2014·Granted Jun 7, 2016·2 cites·12 claims
- 0282US7910355B2Culture observation apparatusOLYMPUS CORP·Filed 2005·Granted Mar 22, 2011·6 cites·18 claims
- 0379US7510082B2Wafer storage containerNIPPON MINING CO·Filed 2005·Granted Mar 31, 2009·7 cites·7 claims
- 0477US7816126B2Culture observation apparatus, sample tray heat-insulating device and lidOLYMPUS CORP·Filed 2005·Granted Oct 19, 2010·3 cites·22 claims
- 0572US8192982B2Tissue culture microscope apparatusHASEGAWA KAZUHIRO·Filed 2006·Granted Jun 5, 2012·2 cites·30 claims
- 0669US7745854B2Substrate for growing compound semiconductor and epitaxial growth methodNIPPON MINING CO·Filed 2007·Granted Jun 29, 2010·1 cites·4 claims
- 0768US11349037B2Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphideJX NIPPON MINING & METALS CORP·Filed 2014·Granted May 31, 2022·0 cites·6 claims
- 0868US9019600B2Microscope systemOLYMPUS CORP·Filed 2012·Granted Apr 28, 2015·2 cites·6 claims
- 0966US11967659B2Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrateJX METALS CORP·Filed 2019·Granted Apr 23, 2024·0 cites·5 claims
- 1066US11211505B2Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphideJX NIPPON MINING & METALS CORP·Filed 2017·Granted Dec 28, 2021·0 cites·4 claims
- 1165US12021160B2Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrateJX METALS CORP·Filed 2019·Granted Jun 25, 2024·0 cites·5 claims
- 1265US7465353B2Method for growing epitaxial crystalNIPPON MINING CO·Filed 2005·Granted Dec 16, 2008·2 cites·7 claims
- 1363US7211142B2CdTe single crystal and CdTe polycrystal, and method for preparation thereofNIPPON MINING CO·Filed 2002·Granted May 1, 2007·5 cites·2 claims
- 1463US6562134B1Crystal growing device and method of manufacturing single crystalNIKKO MATERIALS CO LTD·Filed 2000·Granted May 13, 2003·6 cites·20 claims
- 1562US8120649B2Microscope systemHASHIMOTO YUICHIRO·Filed 2006·Granted Feb 21, 2012·3 cites·20 claims
- 1660US7852397B2Electronic imaging apparatus provided with a dustproof memberOLYMPUS CORP·Filed 2006·Granted Dec 14, 2010·2 cites·13 claims
- 1759US12038386B1Image capturing unit and inspection systemROBIT INC·Filed 2023·Granted Jul 16, 2024·0 cites·13 claims
- 1857US7002230B2CdTe-base compound semiconductor single crystal for electro-optic elementNIKKO MATERIALS CO LTD·Filed 2004·Granted Feb 21, 2006·6 cites·4 claims
- 1957US2010190322A1Compound semiconductor substrateSUZUKI KENJI·Filed 2010·Application pending·0 cites
- 2055US6299680B1CdTe crystal or CdZnTe crystal and method for preparing the sameJAPAN ENERGY CORP·Filed 1999·Granted Oct 9, 2001·11 cites·5 claims
- 2154US11371164B2Compound semiconductor and method for producing single crystal of compound semiconductorJX NIPPON MINING & METALS CORP·Filed 2017·Granted Jun 28, 2022·0 cites·7 claims
- 2254US7120025B2Imaging apparatusOLYMPUS CORP·Filed 2004·Granted Oct 10, 2006·6 cites·10 claims
- 2352US2008247935A1Compound Semiconductor SubstrateNIPPON MINING CO·Filed 2005·Application pending·0 cites
- 2451US7875957B2Semiconductor substrate for epitaxial growth and manufacturing method thereofNIPPON MINING CO·Filed 2007·Granted Jan 25, 2011·0 cites·2 claims
- 2550US8815010B2InP single crystal wafer and method for producing InP single crystalNODA AKIRA·Filed 2005·Granted Aug 26, 2014·0 cites·9 claims
- 2649US7595188B2Observation apparatusOLYMPUS CORP·Filed 2005·Granted Sep 29, 2009·0 cites·6 claims
- 2745US8513775B2CdTe semiconductor substrate for epitaxial growth and substrate containerSUZUKI KENJI·Filed 2010·Granted Aug 20, 2013·0 cites·12 claims
- 2835US7883998B2Vapor phase growth methodNIPPON MINING CO·Filed 2005·Granted Feb 8, 2011·0 cites·5 claims
- 2934US5434100ASubstrate for epitaxy and epitaxy using the substrateJAPAN ENERGY CORP·Filed 1993·Granted Jul 18, 1995·7 cites·10 claims
- 3033US7544343B2CdTe system compound semiconductor single crystalNIPPON MINING CO·Filed 2005·Granted Jun 9, 2009·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →