Inventor · disambiguated record
Sateesh Koka
Also filed as: KOKA SATEESH
25 granted patents·1 pending application·702 citations·filing 2014–2017
97Inventor score
Top patents by PatentIndex Score
26 records- 0199US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 0298US9842907B2Memory device containing cobalt silicide control gate electrodes and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·27 cites·9 claims
- 0398US9780182B2Molybdenum-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·32 cites·16 claims
- 0498US9698152B2Three-dimensional memory structure with multi-component contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·35 cites·13 claims
- 0598US9679906B2Three-dimensional memory devices containing memory block bridgesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 13, 2017·35 cites·18 claims
- 0698US9659955B1Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 23, 2017·46 cites·19 claims
- 0798US9646975B2Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 9, 2017·37 cites·17 claims
- 0898US9478558B2Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·43 cites·34 claims
- 0998US9397046B1Fluorine-free word lines for three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 19, 2016·63 cites·23 claims
- 1098US9236396B1Three dimensional NAND device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 12, 2016·46 cites·11 claims
- 1197US9576966B1Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 21, 2017·25 cites·23 claims
- 1297US9305849B1Method of making a three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·47 cites·11 claims
- 1396US9754958B2Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 5, 2017·17 cites·13 claims
- 1496US9613977B2Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 4, 2017·30 cites·20 claims
- 1596US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 1696US9496419B2Ruthenium nucleation layer for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 15, 2016·30 cites·30 claims
- 1795US10128261B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 13, 2018·14 cites·25 claims
- 1895US9524977B2Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 20, 2016·15 cites·22 claims
- 1995US9515079B2Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 6, 2016·13 cites·13 claims
- 2095US9484357B2Selective blocking dielectric formation in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 1, 2016·28 cites·24 claims
- 2193US9570455B2Metal word lines for three dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 14, 2017·14 cites·24 claims
- 2289US9379132B2NAND memory strings and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·9 cites·25 claims
- 2369US9646990B2NAND memory strings and methods of fabrication thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 9, 2017·1 cites·20 claims
- 2453US9842857B2Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devicesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 12, 2017·0 cites·6 claims
- 2551US2018294272A1Methods of tunnel oxide layer formation in 3d nand memory structures and associated devicesINTEL CORP·Filed 2017·Application pending·0 cites
- 2648US9847340B2Methods of tunnel oxide layer formation in 3D NAND memory structures and associated devicesFAN DARWIN·Filed 2014·Granted Dec 19, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →