Inventor · disambiguated record
Sagy Levy
Also filed as: LEVY SAGY · LEVY SAGY CHAREL
73 granted patents·12 pending applications·1,599 citations·filing 1998–2024
99Inventor score
Files withLongitude Flash Memory Solutions Ltd25CYPRESS SEMICONDUCTOR CORP21POLISHCHUK IGOR8TOWER SEMICONDUCTOR LTD7LEVY SAGY6
Top patents by PatentIndex Score
85 records- 0198US9502543B1Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Nov 22, 2016·15 cites·20 claims
- 0298US8940645B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Jan 27, 2015·33 cites·20 claims
- 0398US8318608B2Method of fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Nov 27, 2012·46 cites·20 claims
- 0498US8063434B1Memory transistor with multiple charge storing layers and a high work function gate electrodePOLISHCHUK IGOR·Filed 2008·Granted Nov 22, 2011·93 cites·9 claims
- 0598US6451713B1UV pretreatment process for ultra-thin oxynitride formationMATTSON TECH INC·Filed 2001·Granted Sep 17, 2002·510 cites·14 claims
- 0697US9929240B2Memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 27, 2018·11 cites·18 claims
- 0797US9449831B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2012·Granted Sep 20, 2016·22 cites·5 claims
- 0897US9355849B1Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted May 31, 2016·19 cites·17 claims
- 0997US9093318B2Memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Jul 28, 2015·22 cites·10 claims
- 1097US8860122B1Nonvolatile charge trap memory device having a high dielectric constant blocking regionPOLISHCHUK IGOR·Filed 2011·Granted Oct 14, 2014·30 cites·11 claims
- 1197US8633537B2Memory transistor with multiple charge storing layers and a high work function gate electrodePOLISHCHUK IGOR·Filed 2012·Granted Jan 21, 2014·23 cites·19 claims
- 1296US9306025B2Memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Apr 5, 2016·17 cites·20 claims
- 1396US8993453B1Method of fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Mar 31, 2015·17 cites·13 claims
- 1496US8859374B1Memory transistor with multiple charge storing layers and a high work function gate electrodePOLISHCHUK IGOR·Filed 2011·Granted Oct 14, 2014·19 cites·16 claims
- 1596US8679927B2Integration of non-volatile charge trap memory devices and logic CMOS devicesRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Mar 25, 2014·31 cites·16 claims
- 1696US8643124B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2011·Granted Feb 4, 2014·27 cites·18 claims
- 1796US8067284B1Oxynitride bilayer formed using a precursor inducing a high charge trap density in a top layer of the bilayerLEVY SAGY·Filed 2008·Granted Nov 29, 2011·38 cites·17 claims
- 1895US10593812B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Mar 17, 2020·7 cites·20 claims
- 1995US10304968B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted May 28, 2019·8 cites·14 claims
- 2095US9349824B2Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted May 24, 2016·18 cites·7 claims
- 2195US8163660B2SONOS type stacks for nonvolatile change trap memory devices and methods to form the samePUCHNER HELMUT·Filed 2009·Granted Apr 24, 2012·39 cites·20 claims
- 2295US8093128B2Integration of non-volatile charge trap memory devices and logic CMOS devicesKOUTNY JR WILLIAM W C·Filed 2008·Granted Jan 10, 2012·89 cites·14 claims
- 2394US8592891B1Methods for fabricating semiconductor memory with process induced strainPOLISHCHUK IGOR·Filed 2012·Granted Nov 26, 2013·19 cites·20 claims
- 2494US7670963B2Single-wafer process for fabricating a nonvolatile charge trap memory deviceCYPRESS SEMICONDUCTOR CORPORTI·Filed 2007·Granted Mar 2, 2010·33 cites·8 claims
- 2594US6884719B2Method for depositing a coating having a relatively high dielectric constant onto a substrateUNIV CALIFORNIA·Filed 2002·Granted Apr 26, 2005·102 cites·43 claims
- 2693US8614124B2SONOS ONO stack scalingJENNE FREDRICK B·Filed 2007·Granted Dec 24, 2013·22 cites·13 claims
- 2793US7799670B2Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devicesCYPRESS SEMICONDUCTOR CORP·Filed 2008·Granted Sep 21, 2010·24 cites·11 claims
- 2891US8871595B2Integration of non-volatile charge trap memory devices and logic CMOS devicesRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Oct 28, 2014·13 cites·20 claims
- 2991US2024332385A1Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2024·Application pending·0 cites
- 3090US9484454B2Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structureTOWER SEMICONDUCTOR LTD·Filed 2013·Granted Nov 1, 2016·11 cites·16 claims
- 3190US9431549B2Nonvolatile charge trap memory device having a high dielectric constant blocking regionPOLISHCHUK IGOR·Filed 2012·Granted Aug 30, 2016·7 cites·7 claims
- 3290US9299568B2SONOS ONO stack scalingJENNE FREDRICK·Filed 2012·Granted Mar 29, 2016·7 cites·14 claims
- 3390US6638876B2Method of forming dielectric filmsMATTSON TECH INC·Filed 2001·Granted Oct 28, 2003·92 cites·33 claims
- 3488US10374067B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Aug 6, 2019·3 cites·19 claims
- 3585US12009401B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 3685US9105712B1Double RESURF LDMOS with separately patterned P+ and N+ buried layers formed by shared maskTOWER SEMICONDUCTOR LTD·Filed 2014·Granted Aug 11, 2015·10 cites·21 claims
- 3785US2024234550A1Oxide-Nitride-Oxide Stack Having Multiple Oxynitride LayersLongitude Flash Memory Solutions Ltd·Filed 2023·Application pending·0 cites
- 3883US7384833B2Stress liner for integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2006·Granted Jun 10, 2008·10 cites·12 claims
- 3982US12266521B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 1, 2025·0 cites·16 claims
- 4082US9716153B2Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping regionLEVY SAGY·Filed 2012·Granted Jul 25, 2017·3 cites·17 claims
- 4181US2023074163A1Sonos ono stack scalingLongitude Flash Memory Solutions Ltd·Filed 2022·Application pending·0 cites
- 4280US11721733B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Aug 8, 2023·0 cites·10 claims
- 4379US11456365B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Sep 27, 2022·0 cites·45 claims
- 4479US10699901B2SONOS ONO stack scalingLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jun 30, 2020·1 cites·21 claims
- 4578US11784243B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4678US6191011B1Selective hemispherical grain silicon depositionASSOCIATES ISRAEL LTD AG·Filed 1998·Granted Feb 20, 2001·63 cites·54 claims
- 4776US10615289B2Nonvolatile charge trap memory device having a high dielectric constant blocking regionLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Apr 7, 2020·1 cites·18 claims
- 4874US10903068B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Jan 26, 2021·1 cites·18 claims
- 4974US8637921B2Nitridation oxidation of tunneling layer for improved SONOS speed and retentionLEVY SAGY·Filed 2007·Granted Jan 28, 2014·3 cites·10 claims
- 5073US11222965B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jan 11, 2022·1 cites·14 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →