Inventor · disambiguated record
Sampath Purushothaman
Also filed as: NITTA SATYA V · PURUSHOTHAMAN SAMPATH
187 granted patents·33 pending applications·8,394 citations·filing 1989–2020
99Inventor score
Top patents by PatentIndex Score
220 records- 0199US8129256B23D integrated circuit device fabrication with precisely controllable substrate removalFAROOQ MUKTA G·Filed 2008·Granted Mar 6, 2012·254 cites·18 claims
- 0299US7855101B2Layer transfer process and functionally enhanced integrated circuits produced therebyIBM·Filed 2009·Granted Dec 21, 2010·102 cites·14 claims
- 0399US7045453B2Very low effective dielectric constant interconnect structures and methods for fabricating the sameIBM·Filed 2005·Granted May 16, 2006·221 cites·9 claims
- 0499US7030481B2High density chip carrier with integrated passive devicesIBM·Filed 2002·Granted Apr 18, 2006·401 cites·52 claims
- 0599US6962872B2High density chip carrier with integrated passive devicesIBM·Filed 2004·Granted Nov 8, 2005·363 cites·29 claims
- 0699US6413852B1Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder materialIBM·Filed 2000·Granted Jul 2, 2002·264 cites·25 claims
- 0799US6224690B1Flip-Chip interconnections using lead-free soldersIBM·Filed 1996·Granted May 1, 2001·191 cites·12 claims
- 0898US7037744B2Method for fabricating a self-aligned nanocolumnar airbridge and structure produced therebyIBM·Filed 2005·Granted May 2, 2006·84 cites·20 claims
- 0998US6184121B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 1998·Granted Feb 6, 2001·369 cites·39 claims
- 1097US6451712B1Method for forming a porous dielectric material layer in a semiconductor device and device formedIBM·Filed 2000·Granted Sep 17, 2002·123 cites·43 claims
- 1197US5981970AThin-film field-effect transistor with organic semiconductor requiring low operating voltagesIBM·Filed 1997·Granted Nov 9, 1999·232 cites·20 claims
- 1297US5946551AFabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectricFiled 1997·Granted Aug 31, 1999·275 cites·31 claims
- 1397US5470661ADiamond-like carbon films from a hydrocarbon helium plasmaIBM·Filed 1993·Granted Nov 28, 1995·362 cites·7 claims
- 1496US7023093B2Very low effective dielectric constant interconnect Structures and methods for fabricating the sameIBM·Filed 2002·Granted Apr 4, 2006·112 cites·22 claims
- 1596US6911400B2Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for sameIBM·Filed 2002·Granted Jun 28, 2005·79 cites·49 claims
- 1696US6337522B1Structure employing electrically conductive adhesivesIBM·Filed 1998·Granted Jan 8, 2002·114 cites·15 claims
- 1796US6207472B1Low temperature thin film transistor fabricationIBM·Filed 1999·Granted Mar 27, 2001·182 cites·10 claims
- 1896US6114413AThermally conducting materials and applications for microelectronic packagingIBM·Filed 1998·Granted Sep 5, 2000·149 cites·29 claims
- 1996US5830332ASputter deposition of hydrogenated amorphous carbon film and applications thereofIBM·Filed 1997·Granted Nov 3, 1998·267 cites·51 claims
- 2095US8093099B2Lock and key through-via method for wafer level 3D integration and structures producedPURUSHOTHAMAN SAMPATH·Filed 2010·Granted Jan 10, 2012·27 cites·10 claims
- 2195US7309649B2Method of forming closed air gap interconnects and structures formed therebyIBM·Filed 2006·Granted Dec 18, 2007·33 cites·15 claims
- 2295US6815329B2Multilayer interconnect structure containing air gaps and method for makingIBM·Filed 2002·Granted Nov 9, 2004·105 cites·13 claims
- 2395US6335539B1Method for improving performance of organic semiconductors in bottom electrode structureIBM·Filed 1999·Granted Jan 1, 2002·235 cites·19 claims
- 2494US7855455B2Lock and key through-via method for wafer level 3 D integration and structures producedIBM·Filed 2008·Granted Dec 21, 2010·35 cites·7 claims
- 2594US7393776B2Method of forming closed air gap interconnects and structures formed therebyIBM·Filed 2006·Granted Jul 1, 2008·26 cites·6 claims
- 2694US7361991B2Closed air gap interconnect structureIBM·Filed 2003·Granted Apr 22, 2008·67 cites·11 claims
- 2793US7030495B2Method for fabricating a self-aligned nanocolumnar airbridge and structure produced therebyIBM·Filed 2004·Granted Apr 18, 2006·64 cites·14 claims
- 2893US6737725B2Multilevel interconnect structure containing air gaps and method for makingIBM·Filed 2002·Granted May 18, 2004·70 cites·12 claims
- 2993US6577011B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 2000·Granted Jun 10, 2003·86 cites·16 claims
- 3093US6500604B1Method for patterning sensitive organic thin filmsIBM·Filed 2000·Granted Dec 31, 2002·57 cites·24 claims
- 3193US6238599B1High conductivity, high strength, lead-free, low cost, electrically conducting materials and applicationsIBM·Filed 1997·Granted May 29, 2001·90 cites·10 claims
- 3293US5436412AInterconnect structure having improved metallizationIBM·Filed 1993·Granted Jul 25, 1995·148 cites·30 claims
- 3392US7709370B2Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structuresIBM·Filed 2007·Granted May 4, 2010·22 cites·13 claims
- 3492US7633079B2Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change materialIBM·Filed 2007·Granted Dec 15, 2009·26 cites·20 claims
- 3592US7179758B2Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectricsIBM·Filed 2004·Granted Feb 20, 2007·50 cites·79 claims
- 3692US6641899B1Nonlithographic method to produce masks by selective reaction, articles produced, and composition for sameIBM·Filed 2002·Granted Nov 4, 2003·43 cites·11 claims
- 3792US6344660B1Thin-film field-effect transistor with organic semiconductor requiring low operating voltagesIBM·Filed 1999·Granted Feb 5, 2002·108 cites·23 claims
- 3891US8617689B2Bonding of substrates including metal-dielectric patterns with metal raised above dielectric and structures so formedCHEN KUAN-NENG·Filed 2012·Granted Dec 31, 2013·10 cites·9 claims
- 3991US8314005B2Homogeneous porous low dielectric constant materialsPURUSHOTHAMAN SAMPATH·Filed 2011·Granted Nov 20, 2012·12 cites·13 claims
- 4091US8129286B2Reducing effective dielectric constant in semiconductor devicesEDELSTEIN DANIEL C·Filed 2008·Granted Mar 6, 2012·11 cites·32 claims
- 4191US7892940B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Feb 22, 2011·11 cites·25 claims
- 4291US7405147B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2004·Granted Jul 29, 2008·35 cites·31 claims
- 4391US6603204B2Low-k interconnect structure comprised of a multilayer of spin-on porous dielectricsIBM·Filed 2001·Granted Aug 5, 2003·54 cites·29 claims
- 4491US5582858AAdhesive layer in multi-level packaging and organic material as a metal diffusion barrierIBM·Filed 1995·Granted Dec 10, 1996·113 cites·14 claims
- 4591US5491610AElectronic package having active means to maintain its operating temperature constantIBM·Filed 1994·Granted Feb 13, 1996·131 cites·10 claims
- 4690US9994741B2Enhanced adhesive materials and processes for 3D applicationsHEDRICK JAMES L·Filed 2015·Granted Jun 12, 2018·7 cites·5 claims
- 4790US6677680B2Hybrid low-k interconnect structure comprised of 2 spin-on dielectric materialsIBM·Filed 2001·Granted Jan 13, 2004·54 cites·25 claims
- 4890US6569707B2Method for improving performance of organic semiconductors in bottom electrode structureIBM·Filed 2001·Granted May 27, 2003·54 cites·18 claims
- 4990US5922466AComposite comprising a metal substrate and a corrosion protecting layerIBM·Filed 1997·Granted Jul 13, 1999·41 cites·19 claims
- 5089US8563396B23D integration method using SOI substrates and structures produced therebyPURUSHOTHAMAN SAMPATH·Filed 2011·Granted Oct 22, 2013·8 cites·8 claims
Showing the top 50 of 220 patent records by PatentIndex Score.
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