Inventor · disambiguated record
Seong-Jin Jang
Also filed as: JANG SEONG · JANG SEONG J · JANG SEONG-JIN
127 granted patents·16 pending applications·2,221 citations·filing 1992–2021
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD89GOLD STAR ELECTRONICS6LG SEMICON CO LTD6BAE SEUNG-JUN5SON JONG-PIL4
Top patents by PatentIndex Score
143 records- 0198US6762620B2Circuit and method for controlling on-die signal terminationSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 13, 2004·201 cites·54 claims
- 0297US8213248B2Semiconductor memory device having improved local input/output line precharge schemeMOON JONG-HO·Filed 2010·Granted Jul 3, 2012·410 cites·14 claims
- 0397US6667895B2Integrated circuit device and module with integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 23, 2003·176 cites·31 claims
- 0496US7280412B2Circuits and methods for data bus inversion in a semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 9, 2007·55 cites·20 claims
- 0595US8045663B2Circuit and method for removing skew in data transmitting/receiving systemSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 25, 2011·26 cites·11 claims
- 0695US7609584B2Latency control circuit and method thereof and an auto-precharge control circuit and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 27, 2009·48 cites·32 claims
- 0794US8743582B23D semiconductor deviceKANG UK-SONG·Filed 2011·Granted Jun 3, 2014·19 cites·36 claims
- 0894US6809546B2On-chip termination apparatus in semiconductor integrated circuit, and method for controlling the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 26, 2004·55 cites·18 claims
- 0993US7362648B2Memory system, memory device, and output data strobe signal generating methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·24 cites·26 claims
- 1093US7020031B2Synchronous semiconductor memory devices and data strobe input buffers with an input buffer circuit and a detection circuit for buffering data theretoSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 28, 2006·54 cites·17 claims
- 1193US6654296B2Devices, circuits and methods for dual voltage generation using single charge pumpSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 25, 2003·76 cites·37 claims
- 1291US8547763B2Memory cell, methods of manufacturing memory cell, and memory device having the sameSON JONG-PIL·Filed 2011·Granted Oct 1, 2013·14 cites·13 claims
- 1391US7400541B2Circuits and methods for data bus inversion in a semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 15, 2008·23 cites·25 claims
- 1491US6704228B2Semiconductor memory device post-repair circuit and methodSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 9, 2004·59 cites·16 claims
- 1590US8335291B2Semiconductor device, a parallel interface system and methods thereofBAE SEUNG-JUN·Filed 2011·Granted Dec 18, 2012·11 cites·3 claims
- 1689US9786387B2Semiconductor memory devices, memory systems including the same and method of correcting errors in the sameCHA SANG-UHN·Filed 2015·Granted Oct 10, 2017·10 cites·22 claims
- 1789US9727412B2Memory device having error notification functionSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 8, 2017·10 cites·16 claims
- 1889US9245827B23D semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 26, 2016·9 cites·21 claims
- 1988US9805827B2Semiconductor memory devices, memory systems including the same and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 31, 2017·9 cites·20 claims
- 2087US7546497B2Semiconductor memory device and data write and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·19 cites·31 claims
- 2187US7403040B2Reference voltage generators for reducing and/or eliminating termination mismatchSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 22, 2008·12 cites·20 claims
- 2287US7034567B2Semiconductor devices with reference voltage generators and termination circuits configured to reduce termination mismatchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·48 cites·18 claims
- 2386US7907693B2Semiconductor device, a parallel interface system and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 15, 2011·11 cites·21 claims
- 2485US7463072B2Small swing signal receiver for low power consumption and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 9, 2008·12 cites·13 claims
- 2585US7453745B2Semiconductor memory device and latency signal generating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·12 cites·18 claims
- 2683US8891324B2Memory device from which dummy edge memory block is removedYI CHUL-WOO·Filed 2013·Granted Nov 18, 2014·8 cites·11 claims
- 2783US7092299B2Memory devices, systems and methods using selective on-die terminationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·31 cites·26 claims
- 2882US5391907ASemiconductor device with buried inverse T-type field regionGOLD STAR ELECTRONICS·Filed 1994·Granted Feb 21, 1995·59 cites·2 claims
- 2981US7420387B2Semiconductor device capable of controlling OCD and ODT circuits and control method used by the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·4 cites·14 claims
- 3080US10127102B2Semiconductor memory devices and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 13, 2018·3 cites·20 claims
- 3180US5640354ADynamic random access memory having self-test functionLG SEMICON CO LTD·Filed 1996·Granted Jun 17, 1997·47 cites·9 claims
- 3279US7768298B2Reference voltage generators for reducing and/or eliminating termination mismatchSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 3, 2010·7 cites·20 claims
- 3379US7619935B2Memory device with separate read and write gate voltage controlsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 17, 2009·11 cites·26 claims
- 3479US7541947B2Semiconductor devices, a system including semiconductor devices and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·7 cites·21 claims
- 3578US8416632B2Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltageKIM KI-HEUNG·Filed 2010·Granted Apr 9, 2013·7 cites·19 claims
- 3678US7525345B2Swing limiterSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 28, 2009·11 cites·25 claims
- 3778US7391634B2Semiconductor memory devices having controllable input/output bit architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·11 cites·22 claims
- 3878US7206876B2Input/output interface of an integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 17, 2007·23 cites·41 claims
- 3978US6992506B2Integrated circuit devices having data inversion circuits therein with multi-bit prefetch structures and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 31, 2006·17 cites·8 claims
- 4077US8482951B2Memory device from which dummy edge memory block is removedYI CHUL-WOO·Filed 2011·Granted Jul 9, 2013·6 cites·12 claims
- 4177US7388417B2Output circuit of a semiconductor memory device and method of outputting data in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 17, 2008·10 cites·25 claims
- 4276US9711192B2Memory device having different data-size access modes for different power modesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·17 claims
- 4376US9312963B2Optical transmission converter, memory system comprising same, and related method of operationSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 12, 2016·3 cites·20 claims
- 4476US8432762B2Bitline sense amplifier, memory core including the same and method of sensing charge from a memory cellKIM JOUNG-YEAL·Filed 2011·Granted Apr 30, 2013·6 cites·19 claims
- 4576US7542372B2Circuit and methods for eliminating skew between signals in semiconductor integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·6 cites·9 claims
- 4676US6894946B2Methods of operating memory systems in which an active termination value for a memory device is determined at a low clock frequency and commands are applied to the memory device at a higher clock frequencySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 17, 2005·22 cites·10 claims
- 4775US7492288B2Transmitting/receiving methods and systems for DC balance encoded data including simultaneous switching noise reducing preamblesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 17, 2009·6 cites·45 claims
- 4875US7269699B2Method and memory system having mode selection between dual data strobe mode and single data strobe mode with inversionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 11, 2007·21 cites·35 claims
- 4974US7852706B2Circuit and methods for eliminating skew between signals in semiconductor integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Dec 14, 2010·5 cites·12 claims
- 5074US5336630AMethod of making semiconductor memory deviceGOLD STAR ELECTRONICS·Filed 1992·Granted Aug 9, 1994·29 cites·8 claims
Showing the top 50 of 143 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →