Inventor · disambiguated record
Serguei Jourba
Also filed as: JOURBA SERGUEI
13 granted patents·2 pending applications·47 citations·filing 2018–2023
88Inventor score
Files withSILICON STORAGE TECH INC15
Top patents by PatentIndex Score
15 records- 0196US11594453B2Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devicesSILICON STORAGE TECH INC·Filed 2022·Granted Feb 28, 2023·3 cites·9 claims
- 0295US10312247B1Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabricationSILICON STORAGE TECH INC·Filed 2018·Granted Jun 4, 2019·18 cites·23 claims
- 0393US10937794B2Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making sameSILICON STORAGE TECH INC·Filed 2018·Granted Mar 2, 2021·10 cites·22 claims
- 0491US10468428B1Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making sameSILICON STORAGE TECH INC·Filed 2018·Granted Nov 5, 2019·7 cites·9 claims
- 0586US10797142B2FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabricationSILICON STORAGE TECH INC·Filed 2018·Granted Oct 6, 2020·4 cites·13 claims
- 0684US11968829B2Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrateSILICON STORAGE TECH INC·Filed 2022·Granted Apr 23, 2024·1 cites·8 claims
- 0780US10727240B2Split gate non-volatile memory cells with three-dimensional FinFET structureSILICON STORAGE TECH INC·Filed 2018·Granted Jul 28, 2020·2 cites·14 claims
- 0878US11114451B1Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devicesSILICON STORAGE TECH INC·Filed 2020·Granted Sep 7, 2021·1 cites·18 claims
- 0972US10644012B2Method of making split gate non-volatile memory cells with three-dimensional FinFET structure, and method of making sameSILICON STORAGE TECH INC·Filed 2019·Granted May 5, 2020·1 cites·14 claims
- 1058US2021193671A1Method Of Forming A Device With Split Gate Non-volatile Memory Cells, HV Devices Having Planar Channel Regions And FINFET Logic DevicesSILICON STORAGE TECH INC·Filed 2019·Application pending·0 cites
- 1157US10818680B2Split gate non-volatile memory cells and logic devices with FINFET structure, and method of making sameSILICON STORAGE TECH INC·Filed 2019·Granted Oct 27, 2020·0 cites·9 claims
- 1256US2024389319A1Memory Device Formed On Silicon-On-Insulator Substrate, And Method Of Making SameSILICON STORAGE TECH INC·Filed 2023·Application pending·0 cites
- 1352US12453136B2Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrateSILICON STORAGE TECH INC·Filed 2022·Granted Oct 21, 2025·0 cites·16 claims
- 1448US12144172B2Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy areaSILICON STORAGE TECH INC·Filed 2022·Granted Nov 12, 2024·0 cites·10 claims
- 1544US12020762B2Method of determining defective die containing non-volatile memory cellsSILICON STORAGE TECH INC·Filed 2022·Granted Jun 25, 2024·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →