Inventor · disambiguated record
Sei-Hyung Ryu
Also filed as: RYU SEI-HYUNG
107 granted patents·40 pending applications·1,515 citations·filing 1999–2024
99Inventor score
Top patents by PatentIndex Score
147 records- 0198US7547578B2Methods of processing semiconductor wafers having silicon carbide power devices thereonCREE INC·Filed 2006·Granted Jun 16, 2009·56 cites·36 claims
- 0298US7381992B2Silicon carbide power devices with self-aligned source and well regionsCREE INC·Filed 2006·Granted Jun 3, 2008·67 cites·21 claims
- 0398US6979863B2Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the sameCREE INC·Filed 2003·Granted Dec 27, 2005·229 cites·49 claims
- 0497US8232558B2Junction barrier Schottky diodes with current surge capabilityZHANG QINGCHUN·Filed 2008·Granted Jul 31, 2012·41 cites·20 claims
- 0597US7728402B2Semiconductor devices including schottky diodes with controlled breakdownCREE INC·Filed 2006·Granted Jun 1, 2010·51 cites·28 claims
- 0696US11610991B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2020·Granted Mar 21, 2023·7 cites·22 claims
- 0796US7026650B2Multiple floating guard ring edge termination for silicon carbide devicesCREE INC·Filed 2003·Granted Apr 11, 2006·87 cites·24 claims
- 0895US8680587B2Schottky diodeHENNING JASON PATRICK·Filed 2011·Granted Mar 25, 2014·22 cites·38 claims
- 0995US7923320B2Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistorsCREE INC·Filed 2007·Granted Apr 12, 2011·32 cites·26 claims
- 1095US7221010B2Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistorsCREE INC·Filed 2003·Granted May 22, 2007·71 cites·25 claims
- 1195US6429041B1Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantationCREE INC·Filed 2000·Granted Aug 6, 2002·81 cites·19 claims
- 1294US11769827B2Power transistor with soft recovery body diodeWOLFSPEED INC·Filed 2020·Granted Sep 26, 2023·3 cites·26 claims
- 1394US8653534B2Junction Barrier Schottky diodes with current surge capabilityZHANG QINGCHUN·Filed 2012·Granted Feb 18, 2014·14 cites·24 claims
- 1494US6956238B2Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channelCREE INC·Filed 2001·Granted Oct 18, 2005·90 cites·44 claims
- 1594US6653659B2Silicon carbide inversion channel mosfetsCREE INC·Filed 2002·Granted Nov 25, 2003·78 cites·12 claims
- 1693US11664436B2Semiconductor devices having gate resistors with low variation in resistance valuesWOLFSPEED INC·Filed 2021·Granted May 30, 2023·2 cites·24 claims
- 1793US8492827B2Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistorsRYU SEI-HYUNG·Filed 2011·Granted Jul 23, 2013·13 cites·21 claims
- 1893US7074643B2Silicon carbide power devices with self-aligned source and well regions and methods of fabricating sameCREE INC·Filed 2003·Granted Jul 11, 2006·64 cites·17 claims
- 1992US11769828B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2021·Granted Sep 26, 2023·2 cites·28 claims
- 2091US9673283B2Power module for supporting high current densitiesHENNING JASON PATRICK·Filed 2012·Granted Jun 6, 2017·9 cites·39 claims
- 2190US7118970B2Methods of fabricating silicon carbide devices with hybrid well regionsCREE INC·Filed 2004·Granted Oct 10, 2006·51 cites·31 claims
- 2290US6329675B2Self-aligned bipolar junction silicon carbide transistorsCREE INC·Filed 2001·Granted Dec 11, 2001·55 cites·2 claims
- 2389US6218254B1Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devicesCREE RESEARCH INC·Filed 1999·Granted Apr 17, 2001·76 cites·20 claims
- 2488US9548374B2High power insulated gate bipolar transistorsCREE INC·Filed 2014·Granted Jan 17, 2017·7 cites·24 claims
- 2588US8664665B2Schottky diode employing recesses for elements of junction barrier arrayHENNING JASON PATRICK·Filed 2011·Granted Mar 4, 2014·10 cites·29 claims
- 2687US9142662B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted Sep 22, 2015·11 cites·25 claims
- 2787US9029945B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted May 12, 2015·11 cites·23 claims
- 2887US6514779B1Large area silicon carbide devices and manufacturing methods thereforCREE INC·Filed 2001·Granted Feb 4, 2003·41 cites·15 claims
- 2986US11057033B2Hybrid power moduleCREE INC·Filed 2019·Granted Jul 6, 2021·5 cites·22 claims
- 3086US8901699B2Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injectionRYU SEI-HYUNG·Filed 2005·Granted Dec 2, 2014·11 cites·10 claims
- 3186US8803277B2Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating sameHENNING JASON·Filed 2011·Granted Aug 12, 2014·10 cites·17 claims
- 3285US12376319B2Support shield structures for trenched semiconductor devicesWOLFSPEED INC·Filed 2022·Granted Jul 29, 2025·1 cites·34 claims
- 3385US8330244B2Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating sameZHANG QINGCHUN·Filed 2009·Granted Dec 11, 2012·8 cites·20 claims
- 3485US7598567B2Power switching semiconductor devices including rectifying junction-shuntsCREE INC·Filed 2006·Granted Oct 6, 2009·9 cites·27 claims
- 3585US7419877B2Methods of fabricating silicon carbide devices including multiple floating guard ring edge terminationCREE INC·Filed 2005·Granted Sep 2, 2008·8 cites·16 claims
- 3685US7414268B2High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Aug 19, 2008·12 cites·21 claims
- 3784US11664434B2Semiconductor power devices having multiple gate trenches and methods of forming such devicesCREE INC·Filed 2020·Granted May 30, 2023·1 cites·34 claims
- 3884US8710510B2High power insulated gate bipolar transistorsZHANG QINGCHUN·Filed 2007·Granted Apr 29, 2014·8 cites·15 claims
- 3982US8629509B2High voltage insulated gate bipolar transistors with minority carrier diverterRYU SEI-HYUNG·Filed 2009·Granted Jan 14, 2014·9 cites·25 claims
- 4081US11309413B2Semiconductor device with improved short circuit withstand time and methods for manufacturing the sameWOLFSPEED INC·Filed 2019·Granted Apr 19, 2022·2 cites·27 claims
- 4181US8193848B2Power switching devices having controllable surge current capabilitiesZHANG QINGCHUN·Filed 2009·Granted Jun 5, 2012·10 cites·30 claims
- 4281US7391057B2High voltage silicon carbide devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Jun 24, 2008·9 cites·18 claims
- 4380US8901639B2Monolithic bidirectional silicon carbide switching devicesRYU SEI-HYUNG·Filed 2012·Granted Dec 2, 2014·4 cites·18 claims
- 4480US7345310B2Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereofCREE INC·Filed 2005·Granted Mar 18, 2008·12 cites·16 claims
- 4580US7304334B2Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the sameCREE INC·Filed 2005·Granted Dec 4, 2007·12 cites·14 claims
- 4678US11075295B2Wide bandgap semiconductor deviceCREE INC·Filed 2018·Granted Jul 27, 2021·2 cites·22 claims
- 4778US9865750B2Schottky diodeCREE INC·Filed 2015·Granted Jan 9, 2018·2 cites·24 claims
- 4878US8445917B2Bidirectional silicon carbide transient voltage suppression devicesHANEY SARAH KAY·Filed 2009·Granted May 21, 2013·9 cites·20 claims
- 4976US12426341B2Semiconductor devices having gate resistors with low variation in resistance valuesWOLFSPEED INC·Filed 2023·Granted Sep 23, 2025·0 cites·21 claims
- 5076US7883949B2Methods of forming silicon carbide switching devices including P-type channelsCREE INC·Filed 2007·Granted Feb 8, 2011·4 cites·20 claims
Showing the top 50 of 147 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →