Inventor · disambiguated record
Shibly S. Ahmed
Also filed as: AHMED SHIBLY · AHMED SHIBLY S
47 granted patents·1 pending application·1,678 citations·filing 2002–2022
99Inventor score
Files withADVANCED MICRO DEVICES INC38GLOBALFOUNDRIES US INC2AHMED SHIBLY S1CYPRESS SEMICONDUCTOR CORP1GLOBALFOUNDRIES INC1
Top patents by PatentIndex Score
48 records- 0199US6611029B1Double gate semiconductor device having separate gatesADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 26, 2003·264 cites·15 claims
- 0297US6833588B2Semiconductor device having a U-shaped gate structureADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 21, 2004·116 cites·14 claims
- 0397US6686231B1Damascene gate process with sacrificial oxide in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 3, 2004·116 cites·20 claims
- 0496US6787854B1Method for forming a fin in a finFET deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·113 cites·5 claims
- 0595US6787406B1Systems and methods for forming dense n-channel and p-channel fins using shadow implantingADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·86 cites·15 claims
- 0694US7250645B1Reversed T-shaped FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 31, 2007·74 cites·13 claims
- 0794US6855607B2Multi-step chemical mechanical polishing of a gate area in a FinFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·70 cites·17 claims
- 0893US6998301B1Method for forming a tri-gate MOSFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 14, 2006·70 cites·16 claims
- 0993US6787439B2Method using planarizing gate material to improve gate critical dimension in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·67 cites·20 claims
- 1091US7084018B1Sacrificial oxide for minimizing box undercut in damascene FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 1, 2006·60 cites·17 claims
- 1191US6855989B1Damascene finfet gate with selective metal interdiffusionADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·54 cites·19 claims
- 1291US6812119B1Narrow fins by oxidation in double-gate finfetADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·57 cites·14 claims
- 1390US6974983B1Isolated FinFET P-channel/N-channel transistor pairADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 13, 2005·55 cites·17 claims
- 1488US7541267B1Reversed T-shaped finfetADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 2, 2009·13 cites·8 claims
- 1588US6756643B1Dual silicon layer for chemical mechanical polishing planarizationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 29, 2004·31 cites·7 claims
- 1687US9006100B2Middle-of-the-line constructs using diffusion contact structuresRASHED MAHBUB·Filed 2012·Granted Apr 14, 2015·9 cites·14 claims
- 1786US7256455B2Double gate semiconductor device having a metal gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 14, 2007·31 cites·16 claims
- 1886US7125776B2Multi-step chemical mechanical polishing of a gate area in a FinFETADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 24, 2006·9 cites·20 claims
- 1985US7029958B2Self aligned damascene gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 18, 2006·31 cites·17 claims
- 2085US6876042B1Additional gate control for a double-gate MOSFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 5, 2005·35 cites·13 claims
- 2184US6894337B1System and method for forming stacked fin structure using metal-induced-crystallizationADVANCED MICRO DEVICES INC·Filed 2004·Granted May 17, 2005·28 cites·19 claims
- 2283US7498225B1Systems and methods for forming multiple fin structures using metal-induced-crystallizationADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 3, 2009·8 cites·20 claims
- 2382US6967175B1Damascene gate semiconductor processing with local thinning of channel regionADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 22, 2005·28 cites·20 claims
- 2482US6958512B1Non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 25, 2005·28 cites·21 claims
- 2581US6936882B1Selective silicidation of gates in semiconductor devices to achieve multiple threshold voltagesADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 30, 2005·27 cites·16 claims
- 2681US6914277B1Merged FinFET P-channel/N-channel pairADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 5, 2005·27 cites·20 claims
- 2780US7186599B2Narrow-body damascene tri-gate FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 6, 2007·26 cites·10 claims
- 2880US6960804B1Semiconductor device having a gate structure surrounding a finADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 1, 2005·22 cites·18 claims
- 2978US9142513B2Middle-of-the-line constructs using diffusion contact structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 22, 2015·3 cites·20 claims
- 3075US7034361B1Narrow body raised source/drain metal gate MOSFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 25, 2006·19 cites·10 claims
- 3172US7262104B1Selective channel implantation for forming semiconductor devices with different threshold voltagesADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 28, 2007·16 cites·18 claims
- 3270US6982464B2Dual silicon layer for chemical mechanical polishing planarizationADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 3, 2006·9 cites·10 claims
- 3366US8912014B1Controlling the latchup effectLIN CHUAN·Filed 2006·Granted Dec 16, 2014·2 cites·4 claims
- 3466US6995438B1Semiconductor device with fully silicided source/drain and damascence metal gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 7, 2006·11 cites·11 claims
- 3566US6812076B1Dual silicon layer for chemical mechanical polishing planarizationADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 2, 2004·7 cites·13 claims
- 3665US7041542B2Damascene tri-gate FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted May 9, 2006·11 cites·16 claims
- 3764US12431900B2Input buffer with hysteresis-integrated voltage protection devices and receiver incorporating the input bufferGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 3864US7091068B1Planarizing sacrificial oxide to improve gate critical dimension in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 15, 2006·10 cites·10 claims
- 3963US7095065B2Varying carrier mobility in semiconductor devices to achieve overall design goalsADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 22, 2006·10 cites·20 claims
- 4056US9759764B1Controlling the latchup effectCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Sep 12, 2017·0 cites·20 claims
- 4156US7432558B1Formation of semiconductor devices to achieve <100> channel orientationADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 7, 2008·6 cites·20 claims
- 4256US7029959B1Source and drain protection and stringer-free gate formation in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 18, 2006·8 cites·17 claims
- 4355US7179692B2Method of manufacturing a semiconductor device having a fin structureADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 20, 2007·5 cites·15 claims
- 4452US8217450B1Double-gate semiconductor device with gate contacts formed adjacent sidewalls of a finYU BIN·Filed 2004·Granted Jul 10, 2012·6 cites·15 claims
- 4548US11368155B1Low power power-up reset output driverGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 21, 2022·0 cites·15 claims
- 4642US7939440B2Junction leakage suppression in memory devicesSPANSION LLC·Filed 2005·Granted May 10, 2011·0 cites·18 claims
- 4739US2004126975A1Double gate semiconductor device having separate gatesFiled 2003·Application pending·0 cites
- 4836US8536011B2Junction leakage suppression in memory devicesAHMED SHIBLY S·Filed 2011·Granted Sep 17, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →