Inventor · disambiguated record
Shih Hsiung Chan
Also filed as: CHAN SHIH H · CHAN SHIH HSIUNG
24 granted patents·20 pending applications·245 citations·filing 1998–2013
95Inventor score
Top patents by PatentIndex Score
44 records- 0195USD594576SLED moduleADVANCED OPTOELECTRONIC TECH·Filed 2009·Granted Jun 16, 2009·80 cites·1 claims
- 0292US8470621B2Method for fabricating a flip-chip semiconductor optoelectronic deviceKUO CHESTER·Filed 2010·Granted Jun 25, 2013·19 cites·14 claims
- 0382US6110809AMethod for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layerFiled 1998·Granted Aug 29, 2000·73 cites·19 claims
- 0480US7683381B2Semiconductor light-emitting deviceADVANCED OPTOELECTRONIC TECH·Filed 2008·Granted Mar 23, 2010·8 cites·19 claims
- 0578US8202752B2Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the deviceHUANG SHIH CHENG·Filed 2009·Granted Jun 19, 2012·5 cites·9 claims
- 0670US8535958B2Method for fabricating light emitting diodeHUNG TZU-CHIEN·Filed 2012·Granted Sep 17, 2013·1 cites·6 claims
- 0770US8093082B2Method of fabricating photoelectric device of group III nitride semiconductor and structure thereofHUANG SHIH CHENG·Filed 2009·Granted Jan 10, 2012·4 cites·4 claims
- 0869US7863717B2Package structure of integrated circuit device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Granted Jan 4, 2011·4 cites·20 claims
- 0967US8242519B2Package structure of light emitting diode for backlightTSANG JIAN SHIHN·Filed 2010·Granted Aug 14, 2012·2 cites·18 claims
- 1067US7824942B2Method of fabricating photoelectric device of group III nitride semiconductor and structure thereofZHANJING TECHNOLOGY SHEN ZHEN·Filed 2009·Granted Nov 2, 2010·3 cites·14 claims
- 1164US8581283B2Photoelectric device having group III nitride semiconductorTU PO-MIN·Filed 2011·Granted Nov 12, 2013·1 cites·12 claims
- 1263US7943494B2Method for blocking dislocation propagation of semiconductorADVANCED OPTOELECTRONIC TECH·Filed 2009·Granted May 17, 2011·1 cites·18 claims
- 1362US8278645B2Light emitting diode and fabrication thereofHONG TZU CHIEN·Filed 2009·Granted Oct 2, 2012·3 cites·7 claims
- 1461US8217400B2Polychromatic light emitting diode device having wavelength conversion layer made of semiconductor and method for manufacturing the sameHUANG SHIH CHENG·Filed 2009·Granted Jul 10, 2012·1 cites·9 claims
- 1561USD616384SLED moduleADVANCED OPTOELECTRONIC TECH·Filed 2009·Granted May 25, 2010·11 cites·1 claims
- 1661US2009053260A1Algae essence nucleic acid fluid concentration preparation methodCHAN SHIH-HSIUNG·Filed 2008·Application pending·0 cites
- 1758US8513696B2Lateral thermal dissipation LED and fabrication method thereofTU PO MIN·Filed 2010·Granted Aug 20, 2013·1 cites·9 claims
- 1858US7602116B2Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2005·Granted Oct 13, 2009·1 cites·38 claims
- 1956USD600372SLED moduleADVANCED OPTOELECTRONIC TECH·Filed 2009·Granted Sep 15, 2009·9 cites·1 claims
- 2055US8580590B2Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductorHUANG SHIH-CHENG·Filed 2012·Granted Nov 12, 2013·0 cites·16 claims
- 2155US8148246B2Method for separating semiconductor layer from substrateLIN WEN YU·Filed 2009·Granted Apr 3, 2012·1 cites·13 claims
- 2254US2009121214A1Iii-nitride semiconductor light-emitting device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2008·Application pending·0 cites
- 2352US7872267B2Light emitting diode and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2008·Granted Jan 18, 2011·0 cites·8 claims
- 2451US8866161B2Light-emitting semiconductor device having sub-structures for reducing defects of dislocation thereinHUANG SHIH-CHENG·Filed 2011·Granted Oct 21, 2014·0 cites·6 claims
- 2550US2013248922A1Flip-chip semiconductor optoelectronic device and method for fabricating the sameADVANCED OPTOELECTRONIC TECH·Filed 2013·Application pending·0 cites
- 2649US2009278140A1Manufacturing method of semiconductor deviceADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 2749US2010009476A1Substrate structure and method of removing the substrate structureADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 2849US2010170936A1Method for bonding two materialsADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 2948US6448584B1Light emitting diode with high luminance and method for making the sameFiled 2000·Granted Sep 10, 2002·3 cites·10 claims
- 3048US2010019263A1Rough structure of optoelectronic device and fabrication thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3148US2010019256A1Light emitting device with electron blocking combination layerADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3248US2010032649A1Light emitting device and reduced polarization interlayer thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3348US2009321780A1Gallium nitride-based light emitting device with roughened surface and fabricating method thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3447US2009166650A1Light-emitting device of group iii nitride-based semiconductor and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2008·Application pending·0 cites
- 3547US2011163295A1Semiconductor with low dislocationADVANCED OPTOELECTRONIC TECH·Filed 2011·Application pending·0 cites
- 3647US2009278160A1Radiation emitting semiconductor deviceADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3747US2011210312A1Iii-nitride semiconductor light-emitting device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2011·Application pending·0 cites
- 3847US2009224226A1Light emitting device of group iii nitride based semiconductorADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3946US2010295084A1Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure ThereofADVANCED OPTOELECTRONIC TECH·Filed 2010·Application pending·0 cites
- 4045US6472687B1Light emitting diode with high luminance and method thereforFiled 1999·Granted Oct 29, 2002·14 cites·15 claims
- 4142US2006076882A1Color-adjustable light apparatus and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2005·Application pending·0 cites
- 4240US2010224900A1Semiconductor optoelectronic device and method for making the sameADVANCED OPTOELECTRONIC TECH·Filed 2010·Application pending·0 cites
- 4340US2010224897A1Semiconductor optoelectronic device and method for forming the sameADVANCED OPTOELECTRONIC TECH·Filed 2010·Application pending·0 cites
- 4434US2003148591A1Method of forming semiconductor deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →